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  • 1
    Electronic Resource
    Electronic Resource
    Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 984-992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of GaAs and (Al,Ga)As doped with boron (from diborane) and silicon was investigated to examine the effect of boron on (DX) centers in silicon-doped material. The addition of diborane to the growth of GaAs and (Al,Ga)As results in the superlinear incorporation of boron into the solid with a concurrent reduction in the growth rate. Boron incorporation also decreases as the growth temperature is increased. Additionally, the AlAs mole fraction increases with increasing diborane during (Al,Ga)As growth. The DX center was not eliminated in (Al,Ga)As by the addition of boron. The thermal stability of these materials was also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351295
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of indium on the properties of DX centers in Si-doped Iny(Ga0.3Al0.7)1−yAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1674-1681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of In to Si-doped Al0.3Ga0.7As has been investigated to determine its effect on DX centers. As expected, the persistent photoconductivity of the material is reduced as the band gap decreases with increasing In concentration. In addition, a new deep level transient spectroscopy peak is observed for the first time, which we attribute to DX centers having near In neighbors. This is clear evidence that the DX levels are highly localized states associated with donor impurities, whose properties are very sensitive to the local atomic configuration near the donor atom. This work supports previously published work on the effects of alloy disorder on DX centers, which is the strongest evidence to date for the microscopic configuration of the DX level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346651
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  • 3
    Electronic Resource
    Electronic Resource
    Nucleation of dislocations in SiGe layers grown on (001)Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3968-3977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive x-ray-diffraction study of the variation of the tilt angle between a Si1−xGex layer and the (001) Si substrate is presented. Such measurements provide the basis of a new method for determining the nucleation activation energy of misfit dislocations. A detailed model, independent of the particular relaxation mechanism, is derived which relates the tilt angle to the nucleation activation energy on the different slip systems and to the density of misfit dislocations. The model has been applied to the modified Frank–Read mechanism observed in graded samples. Relaxation occurs in such samples for strain in the range 0.002≤ε≤0.006 with an activation energy of about 4 eV. The critical thickness for growth of a strained layer is shown to be smaller when the substrate is miscut than when it is well oriented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356992
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  • 4
    Electronic Resource
    Electronic Resource
    Measurements of alloy composition and strain in thin GexSi1−x layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8098-8108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The utility of Raman spectroscopy for the simultaneous determination of composition and strain in thin GexSi1−x layers has been investigated. Using data from the literature and new data for the strain shift of the Si-Si phonon mode presented here, we show how Raman spectra provide several different means of measuring composition and strain in samples as thin as 200 A(ring). We demonstrate that for largely relaxed layers with compositions near x=0.30, Raman scattering can measure the composition, x, with an accuracy of ±0.015 and the strain, ε, with an accuracy ±0.0025. The accuracy of the alloy composition obtained from Raman spectra is comparable or, in the case of very thin layers, superior to that measured by other techniques such as x-ray diffraction, electron microprobe, and Auger electron spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356554
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  • 5
    Electronic Resource
    Electronic Resource
    Unique x-ray diffraction pattern at grazing incidence from misfit dislocations in SiGe thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 89-96 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing-incidence x-ray diffraction (GIXD) permits the direct measurement of in-plane lattice parameters of SiGe films that are too thin to yield good results from normal-geometry triple-axis techniques. A unique "X''-shaped pattern has been seen in H–K reciprocal space maps of diffracted x-ray intensity from SiGe films that have relaxed via a modified Frank–Read mechanism. Contours of intensity are seen along the 〈110〉 directions from the (4¯00) reciprocal lattice peak with the introduction of the first dislocations. For higher dislocation densities the X-shaped contours are anisotropically distorted and a satellite peak, corresponding to the lattice parameter for a partially relaxed film, becomes identifiable at lower H. In contrast, H–K reciprocal-space contours from thin SiGe films that have relaxed by roughening and subsequent random nucleation of dislocations display broad, oval-shaped contours centered at the (4¯00) reciprocal lattice point for the film. Numeric simulations of GIXD from a variety of dislocation arrangements were performed in order to understand the origin of the X pattern. We show that this pattern arises from an array of long misfit dislocations running in the 〈110〉 directions. The anisotropic distortion of the X pattern arises at higher dislocation densities from orthogonal intersections of dislocations with equal Burgers vector, which are characteristic of dislocation networks generated by the modified Frank–Read mechanism. We also verify that the measured values of the in-plane lattice parameter, together with the out-of-plane lattice parameter determined from the symmetric (004) reflection, lead to accurate calculation of the composition and strain in these SiGe layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362776
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1979-1981 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intentional oxygen doping ((approximately-greater-than)1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers was achieved during metalorganic vapor phase epitaxy through use of an oxygen-bearing metalorganic precursor, dimethylaluminum methoxide (CH3)2AlOCH3. The incorporation of oxygen and very low levels of Al (AlAs mole fraction 〈0.005) in the GaAs layers leads to the compensation of intentionally introduced Si donors. Additionally, deep levels in GaAs associated with oxygen were detected. The introduction of dimethyl aluminum methoxide during AlxGa1−xAs growth did not alter Al mode fraction or degrade the crystallinity of the ternary layers, but did incorporate high levels of oxygen which compensated Si donors. The compensation in both GaAs and Al0.30Ga0.70As indicates that high resistivity buffer layers can be grown by oxygen doping during metalorganic vapor phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105038
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1−xAs of low Al content (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2546-2548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements by deep level transient spectroscopy of electron emission from the deep donor level (DX center) in Si-doped GaAs and AlxGa1−xAs of very low Al content. For the first time, discrete emission rates corresponding to different local configurations of Ga and Al atoms around the Si donor are resolved. The large change in emission kinetics previously observed between GaAs and AlxGa1−xAs (x≥0.14) is thus shown to arise from the local alloy disorder which is absent in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100203
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  • 8
    Electronic Resource
    Electronic Resource
    Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 688-695 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two shallow hole traps dominate the deep level transient spectroscopy (DLTS) data for strain-relaxed Si0.7Ge0.3 layers grown on Si(100) by ultrahigh vacuum chemical vapor deposition at temperatures ≤560 °C. The trap energy levels are at Ev+0.06 and Ev+0.14 eV and trap concentrations are ≤5×1014 cm−3 in relaxed layers having threading dislocation densities of 2–4×107 cm−2. A logarithmic dependence of the filling rate indicates that these traps are associated with extended defects and this is confirmed by their absence in a sample having no dislocations. The annealing temperature of the DLTS peaks is consistent with the interpretation of these traps as states of defect complexes at dislocations, rather than intrinsic dislocation states or isolated defect complexes. The trap concentrations are proportional to the oxygen concentration in the film, suggesting that oxygen may be a constituent of the defect complex. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365599
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  • 9
    Electronic Resource
    Electronic Resource
    Exponential thermal emission transients from DX centers in heavily Si-doped GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2102-2104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics for the thermal emission of electrons from DX levels are shown to be exponential in heavily Si-doped GaAs. Isothermal voltage transients, obtained at constant capacitance, show a perfect exponential behavior. In contrast, a clear deviation from a single exponential function is observed when the transients are recorded at constant voltage, due to the nonuniform doping profile in these structures. The exponential emission kinetics seen in GaAs support the proposal that nonexponential emission kinetics observed at constant capacitance in AlxGa1−xAs are due to different emission rates for DX levels having different local atomic configurations in the alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102986
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  • 10
    Electronic Resource
    Electronic Resource
    Comment on "Physical meaning of electron capture kinetics on DX centers'' [Appl. Phys. Lett. 53, 1841 (1988)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 804-805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101765
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