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  • 1
    Electronic Resource
    Electronic Resource
    Removal of Paracoccus denitrificans outer membrane material by sodium chloride (1981)
    Springer
    Archives of microbiology 130 (1981), S. 307-311 
    Details
    ISSN: 1432-072X
    Keywords: Paracoccus denitrificans ; Cell surface ; Outer membrane ; Lysozyme ; Scanning electron microscopy ; NaCl treatment
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The effects of water washing and NaCl treatment on the cell surface of P. denitrificans were studied. Both treatments caused a release of material from cells. Chemical studies showed that NaCl treatment released material containing components characteristic of outer membrane. This treatment also increased the susceptibility of the organism to lysozyme. Scanning electron microscopy was used to monitor the effects of water washing and NaCl treatment on the cell surface. Both treatments were shown to alter the appearance of the cell surface. The disruptive effects of these procedures were found to be dependent upon the age of the culture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00425945
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  • 2
    Electronic Resource
    Electronic Resource
    Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 219-221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of growth temperature on the interfacial abruptness of strained Ge layers, a few monolayers thick, embedded in Si has been studied using Raman spectroscopy to identify the presence of GeGe and GeSi bonds and medium energy ion scattering to characterize the spatial extent of the layers. Atomically sharp interfaces are observed for growth temperatures just above the crystalline to amorphous transition range, with pseudomorphic growth found for growth temperatures 〉∼250 °C. Asymmetric mixing of Ge into the Si capping layer occurs during growth at higher temperatures. Significantly less intermixing occurs on annealing after growth, pointing to the role of dynamical processes occurring at the growth front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101014
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  • 3
    Electronic Resource
    Electronic Resource
    Measurements of alloy composition and strain in thin GexSi1−x layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8098-8108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The utility of Raman spectroscopy for the simultaneous determination of composition and strain in thin GexSi1−x layers has been investigated. Using data from the literature and new data for the strain shift of the Si-Si phonon mode presented here, we show how Raman spectra provide several different means of measuring composition and strain in samples as thin as 200 A(ring). We demonstrate that for largely relaxed layers with compositions near x=0.30, Raman scattering can measure the composition, x, with an accuracy of ±0.015 and the strain, ε, with an accuracy ±0.0025. The accuracy of the alloy composition obtained from Raman spectra is comparable or, in the case of very thin layers, superior to that measured by other techniques such as x-ray diffraction, electron microprobe, and Auger electron spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356554
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  • 4
    Electronic Resource
    Electronic Resource
    Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1732-1734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman active vibrational modes of single, 1 to 6 layer thick Ge films grown epitaxially on Si(100) and covered by thin layers of Si(100) have been measured. Both the Ge-Ge vibrations from the interior of the Ge films and the Ge-Si vibrations at the Ge-Si interfaces have been observed. These modes and the weak defect activated scattering are used to characterize the Ge layers. These results show that Raman spectroscopy can now be used to directly characterize the properties of buried interfaces at the level of single atomic layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98558
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  • 5
    Electronic Resource
    Electronic Resource
    Intercalation compounds of metal hydroxides with Group V layered dichalcogenides (1975)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 79 (1975), S. 553-557 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100573a002
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  • 6
    Electronic Resource
    Electronic Resource
    Raman spectroscopy of CySi1−y alloys grown by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 961-963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been used to observe the C local mode in epitaxial CySi1−y layers grown by molecular beam epitaxy. The scattering cross section per C atom is independent of alloy concentration for y〈2%. Lattice relaxation about substitutional C sites induces an extra peak near 475 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107742
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  • 7
    Electronic Resource
    Electronic Resource
    Luminescence degradation in porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 639-641 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the stability of the luminescence from porous Si in the presence of a variety of ambient gases (e.g., N2, H2, forming gas, and O2). Although the optical properties are fairly stable under most conditions, illumination in the presence of O2 causes a substantial decrease in luminescence efficiency. Infrared measurements show that the surfaces of degraded samples are oxidized. The luminescence lifetime of the degraded material is found to be substantially reduced, and the density of Si dangling bonds increases by more than two orders of magnitude, which suggests that oxidation of the surface introduces nonradiative recombination channels. These observations indicate that the electronic properties at the surface of the porous Si play a key role in obtaining efficient luminescence from this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106578
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  • 8
    Electronic Resource
    Electronic Resource
    Raman scattering from H or O terminated porous Si (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2279-2281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107054
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  • 9
    Electronic Resource
    Electronic Resource
    Picosecond hot electron light emission from submicron complementary metal–oxide–semiconductor circuits (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 889-891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical emission consisting of pulses with temporal widths of less than 270 ps has been detected from fully functional silicon integrated circuits fabricated using submicron complementary metal– oxide–semiconductor (CMOS) logic gates. Emission is observed under normal bias conditions and occurs when the gates are switching. The emission arises from the hot electron populations created by the transient current pulses present in the transistors during switching. The speed and spectral characteristics of the emission suggest future applications in the measurement of timing in high speed CMOS circuits. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118305
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  • 10
    Electronic Resource
    Electronic Resource
    Raman scattering analysis of relaxed GexSi1−x alloy layers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2069-2071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used Raman scattering to evaluate thick epitaxial GexSi1−x layers with 0.20≤x≤0.43 grown on Si (100) substrates. We show that a detailed consideration of the composition dependencies of the relative intensities of the various phonon modes can enhance the sensitivity of Raman scattering to variations in composition and strain. We find that samples are uniform on a scale of (approximately-equal-to)1 μm laterally and 〈1000 A(ring) in the growth direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109481
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