Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    DEVICE INNOVATION AND MATERIAL CHALLENGES AT THE LIMITS OF CMOS TECHNOLOGY (2000)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 30 (2000), S. 681-697 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Scaling of the predominant silicon complementary metal-oxide semiconductor (CMOS) technology is finally approaching an end after decades of exponential growth. This review explores the reasons for this limit and some of the strategies available to the semiconductor industry to continue the technology extension. Evolutionary change to the silicon transistor will be pursued as long as possible, with increasing demands being placed on materials. Eventually new materials such a silicon-germanium may be used, and new device topologies such as the double-gated transistor may be employed. These strategies are being pursued in research organizations today. It is likely that planar technology will reach its limit with devices on the 10-nm scale, and then the third dimension will have to be exploited more efficiently to achieve further performance and density improvements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.matsci.30.1.681
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Chemical Exchange Reactions and H 2 Formation in Dark Interstellar Clouds (1968)
    [s.l.] : Nature Publishing Group
    Nature 220 (1968), S. 1214-1215 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The complete neglect of photodissociation in the analysis1 is even more serious. Solomon (see Field et aL2) and Stecher and Williams3 have pointed out that the H2 molecule is expected to dissociate in HI regions through absorption in the lines of the Lyman b1108 A) followed by re-emission to the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/2201214a0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Production of OH Molecules in Interstellar Shock Waves (1968)
    [s.l.] : Nature Publishing Group
    Nature 217 (1968), S. 435-437 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] We have calculated the OH production caused by pre-association, as suggested by Solomon7, O + H-^OH, JS^Sx lO-^expC-SJOO/TJcn^sec-1 (1) where , K1 = n(OH)/n(O)n(H). Obviously this reaction proceeds even if H2 is absent, but, like the reactions involving H2 and grains, it requires the high ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/217435a0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Formation and Chemical Pumping of OH Molecules (1968)
    [s.l.] : Nature Publishing Group
    Nature 217 (1968), S. 334-336 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] It has been suggested that maser amplification may be the cause of intense OH lines observed in some small sources. An efficient two body pre-association of hydrogen and oxygen may lead to the formation of OH and the population inversion needed for maser ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/217334a0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    On the rectifying ability of a p-type semi-insulating junction (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5408-5419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The system consisting of an unintentionally doped GaAs epitaxial layer on a semi-insulating (SI) GaAs substrate forms a starting point for the GaAs integrated circuit technology. It is also the genesis of problems for GaAs field-effect transistors (FETs) in the form of back gating. Potentials applied to a point on the surface may propagate several millimeters to modulate the conduction of an FET built into the layer. In addition, the conductivity of the epilayer may be efficiently modulated by a potential applied to the back of the SI substrate. Well-developed p-channel FET characteristics have been observed in an epilayer on top of a 0.4-mm-thick SI substrate using the back of the substrate as a gate. Numerical simulations revealed that under some circumstances potentials may propagate across the substrate with little attenuation, giving a degree of modulation in agreement with experiment. Conditions for current transport then corresponded closely to those in a rectifying p-n junction. The parameter space was fully explored numerically and using an analytical model, and a simple set of conditions for rectification were developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350198
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Direct measurement of the energy distribution of hot electrons in silicon dioxide (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1302-1313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy distribution of hot electrons in high-field stressed amorphous silicon dioxide (SiO2) films have been measured using a vacuum emission technique. Electrons having average energies (approximately-greater-than)2 eV and an energy relaxation length of λ≈32 A(ring) are observed at all fields studied ((approximately-greater-than) 2 MV/cm). However, contrary to previous theoretical expectations, the majority of carriers in the distribution remains stable at all fields. The results are in agreement with other recent experiments (electroluminescence and carrier separation) which only measure the average energy of hot electrons in SiO2 and with recent Monte Carlo transport calculations which include scattering by both optical and acoustic phonon modes. Results for varying SiO2 thickness, metal gate thickness, oxide composition, and metal gate composition will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336098
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Determination of the conduction-band discontinuity between In0.53Ga0.47As/In0.52Al0.48As using n+-InGaAs/InAlAs/n−-InGaAs capacitors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1709-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conduction-band discontinuity (ΔEc) between In0.53Ga0.47As and In0.52Al0.48As is determined by current-voltage measurements on n+-InGaAs/InAlAs/n−-InGaAs capacitors. Current is found to be dominated by thermionic emission conduction down to 180 K. Barrier heights are determined from the slope of ln(J/T2) vs 1/T where good straight-line fits are obtained in the thermionic emission range. After correcting for the Fermi level a conduction-band discontinuity of 0.51±0.04 eV is obtained representing 70% of the total band-gap discontinuity. Furthermore, capacitance-voltage measurements are fit to classical capacitance-voltage theory and show that no charge is present in the InAlAs insulating layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337262
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2844-2853 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have combined current-voltage (I-V) and capacitance-voltage (C-V) measurements on n− GaAs–Al0.4Ga0.6As–n+ GaAs capacitors with different thicknesses of Al0.4Ga0.6As to determine the conduction-band discontinuity at the Al0.4Ga0.6As–n+ GaAs interface. Undoped AlxGa1−xAs deposited by molecular-beam epitaxy contains negative charge. We calculate the effect of band bending in undoped AlxGa1−xAs due to negative charge on measured barrier heights and on C-V curves. The temperature dependence of I-V curves is analyzed in terms of thermionic emission to derive barrier heights at the n+ GaAs–Al0.4Ga0.6As interface φG. Measured values of φG are proportional to the square of the insulator thickness, w, showing that negative charge is uniformly distributed through undoped Al0.4Ga0.6As. Combining values of Fermi energy and band bending at zero bias with φG at zero Al0.4Ga0.6As thickness, we find that the value of the barrier discontinuity for n+ GaAs–Al0.4Ga0.6As is ∼0.30 V. This corresponds to a ratio of conduction-band discontinuity ΔEC to band-gap difference ΔEG of 0.63±0.03, which is appreciably less than the value 0.85±0.03 that is widely accepted. We find that the dielectric constant of Al0.4Ga0.6As is more temperature dependent than that of GaAs between 77 and 250 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335221
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of carrier density in depleted epitaxial layers deposited on semi-insulating substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1565-1569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the temperature dependence of the carrier density in epitaxial layers of semiconductors deposited on semi-insulating substrates when the potentials at the surface and the substrate interface are pinned. The results of these calculations are compared to experiments on thin, nominally undoped p-type layers of GaAs deposited epitaxially on EL2-dominated substrates. The theory predicts that as the temperature is lowered to some critical value the depletion layers at the edges of the epilayer overlap for thin, lightly doped samples. Below this value the carrier density decreases exponentially with inverse temperature with an activation energy which depends on the surface and interface potentials, as well as on the dopant concentration and the width of the layer. This activation energy can be derived analytically for strong depletion. In the intermediate range between negligible and complete depletion of the layer the carrier density must be obtained by numerical methods, and we present the results of such a calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349518
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    A temperature-independent capacitance in semiconductor-insulator-semiconductor capacitors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6548-6551 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both measurements of capacitance-voltage (C-V) curves of n− GaAs-undoped Al xGa1− xAs- n+ GaAs (AlGaAs) capacitors at different temperatures, and calculations of C-V curves of semiconductor-insulator-semiconductor (SIS) capacitors at different temperatures, show that there is a temperature-invariant capacitance CC and voltage VC at which C-V curves at different temperatures intersect. We show that this is a general property of SIS capacitors having a degenerate gate and nondegenerate substrate of the same doping type, and that qVC, where q is the electron charge, is approximately equal to the Fermi energy of the degenerate GaAs gate. VC provides a good estimate for the voltage required to establish an accumulation layer on n− GaAs at low temperatures, which is determined from magnetotunneling measurements on AlGaAs capacitors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345133
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...