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  • 2005-2009  (18)
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Year
  • 11
    Electronic Resource
    Electronic Resource
    Influence of Sintering Temperature on Defects in Porous Silica Monoliths Studied by Positron Annihilation Techniques (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 607 (Nov. 2008), p. 204-206 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Positron lifetime and coincidence Doppler broadening spectra for porous silica calcined at temperatures from 900 to 1500 oC have been measured. As the sintering temperatures increasing from 900 to 1000 oC, the height of the peaks of the ratio curves decrease, and the τ3 increases, which is due to the exclusion of the gas and the organic substance out of the cavities. As the sintering temperatures increasing from 1000 to 1250 oC, some of the defects were recovered, the grains of low quarts appearing and growing. This gives rise to the increase of the height of the peak of the ratio curve, and the decrease of lifetime (τ1,τ2 and τ3). As the sintering temperatures increasing from 1250 to 1500oC, the height of the peak of the ratio curve decreases, and the lifetime increases due to the phase transition of low quartz to cristobalite
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.607.204.pdf
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  • 12
    Electronic Resource
    Electronic Resource
    Construction of 1-Iodo-4-Nitrobenzene Nanowires on Graphite (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 437-440 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: We dissolved 1-iodo-4-nitrobenzene in various solvents, including ethanol, benzene,toluene and dimethylacetamide, and prepared solution with different concentration from 10-2 M to10-5 M. Epitaxial Au(111) film and graphite were used as substrates. Scanning tunneling microscope(STM) was used to observe structures of 1-iodo-4-nitrobenzene molecules on those substrates.Experimentally, we found that 1-iodo-4-nitrobenzene molecules constructed nanowires on graphitesurface at room temperature in air. The mechanism of formation of nanowire is briefly discussed inthis paper
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.437.pdf
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    Paper (German National Licenses)
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  • 13
    Electronic Resource
    Electronic Resource
    The Behavior of Oxygen and Defects in Si-Based Semiconductor Studied by Positron Annihilation Techniques (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 607 (Nov. 2008), p. 131-133 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Slow positron beam and coincidence Doppler broadening techniques have been used to follow temperature-induced defects and structural changes in Cz-Si with an initial oxygen content of 1.1×1018 cm-3. Oxygen is recognized as a peak at about 11.85×10-3m0c on the ratio curves. For Cz-Si annealed at 480 oC/15h or 600 oC/15h, the ratio curves show the presence of vacancy-like defects, but they are not associated with oxygen. For Cz-Si annealed at 480 oC/15h, then followed by a 600 oC/15h heat treatment, the ratio curves show the signal of O atom. The ratio curves of Cz-Si, thermally treated by a two-step (480oC/15h + 600oC/15h) pre-annealing, followed by a one-step annealing under different hydrostatic argon pressures and annealed temperatures, also show a peak at 11.85×10-3m0c. The height of the peak varies with different samples. Experimental results indicate that the SiO2 film will form on the surface of Cz-Si after the heat treatment
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.607.131.pdf
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  • 14
    Electronic Resource
    Electronic Resource
    Finite Element Modeling of Burr Formation in Metal Cutting with a Backup Material (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 24-25 (Sept. 2007), p. 71-76 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 2D finite element model with the same material for backup to minimize the burr size wasdeveloped to investigate mechanism of burr formation and burr minimization. The flowstress of theworkpiece and backup material are taken as a function of strain, strain-rate and temperature.Temperature-dependent material properties are also considered. The Cockroft-Latham damagecriterion has been adopted to simulate ductile fracture. The crack initiation and propagation issimulated by deleting the mesh element. The result shows putting a backup material behind the edgeof the workpiece is an effective way to minimize the burr size. The effects of cutting condition,temperature and different backup material properties on the burr formation and burr size can beinvestigated using the developed finite element model. This model could be useful in the search foroptimal tool geometry and cutting condition for burr minimization and for the modeling of a burrformation mechanism
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.24-25.71.pdf
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    Paper (German National Licenses)
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  • 15
    Electronic Resource
    Electronic Resource
    Effect of Tool Flank Wear on the Orthogonal Cutting Process (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 329 (Jan. 2007), p. 705-710 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A coupled thermoelastic-plastic plane-strain finite element model is developed to studyorthogonal cutting process with and without flank wear. The cutting process is simulated from theinitial to the steady-state of cutting force and cutting temperature, by incrementally advancing thecutting tool forward. Automatic continuous remeshing is employed to achieve chip separation at thetool tip regime. The effect of the degree of the flank wear on the cutting forces and temperaturefields is analyzed. With the flank wear increasing, the maximum cutting temperature values on theworkpiece and cutting tool increase rapidly and the distribution of temperature changes greatly. Theincrease of tool flank wear produced slight increase in cutting forces but significant increase inthrust forces
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.329.705.pdf
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  • 16
    Electronic Resource
    Electronic Resource
    A New Algorithm with Distance Constraint for Large-Scale Profile Measurement (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 326-328 (Dec. 2006), p. 159-162 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.326-328.159.pdf
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  • 17
    Electronic Resource
    Electronic Resource
    Study on Process of Planing Forming of Plate Fin Heat Sinks (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 532-533 (Dec. 2006), p. 237-240 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Primary heat dissipation method of IC Chip is still air-cooling at present. This paperpresents a new machining method of air-cooled plate fin heat sinks, namely orthogonal planing. Thesurface of plate fins machined by this method are rough enough to augment its specific surface area;the rough surface can also disturb laminar sub-layer of turbulent thermal boundary layer, thus thethermal resistances of thermal boundary layer are reduced. Therefore, heat dissipation efficiency ofheat sink can be enhanced further. The focus of plate fin heat sinks forming by orthogonal planing ishow to machine flat chips. A new pattern of chip curl that is called down-curl can be observed whenrake angle of tool is rather large and cutting thickness is very thin. As cutting thickness increases,down-curl chips become flat and then up-curling. There is a transition area that chips are not curledbetween down- and up-curl. The conditions that chips are not curled are obtained throughinvestigating influences of rake angle and cutting thickness on chip curl, and flat plate fins with roughsurface are produced
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.532-533.237.pdf
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  • 18
    Electronic Resource
    Electronic Resource
    Effect of Rounded Cutting Edge Radius on Residual Stress within Machined Sublayer (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 532-533 (Dec. 2006), p. 536-539 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A coupled thermal-mechanical model of plane-strain orthogonal metal cutting withcontinuous chip formation is developed to investigate the residual stresses in the finished workpiece.Deformation of the workpiece material is treated as elastic-viscoplastic with isotropic strainhardening, and the numerical solution accounts for coupling between plastic deformation and thetemperature field, including treatment of temperature-dependent material properties. Automaticcontinuous remeshing and adaptive meshing technique are employed to achieve chip separation atthe tool tip region and a satisfactory solution. The finite element model is well validated bycomparing values of the predicted cutting forces and residual stresses with experimental results.Based on the established finite element model, the effect of rounded cutting edge radius on residualstress distribution is analyzed. The results show that altered cutting edge radius clearly producedsignificant changes in residual stresses. The maximum tensile residual stress and its penetrationdepth decrease as the cutting edge radius increases
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.532-533.536.pdf
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