ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Epitaxial layers have been grown on the (0001) C-face of 2- and 3-inch 4H-SiC wafers.Growth conditions like temperature, pressure, and C/Si ratio have been varied. In both systemssmooth surface morphologies could be obtained. The main challenge of epitaxial growth on the Cfaceof 4H-SiC for electronic device applications seems to be the control of low dopingconcentration. High temperature and low pressure are the key parameters to reduce the nitrogenincorporation. The hot-wall CVD system used for these experiments allowed the application ofhigher temperatures and lower pressures than the cold-wall equipment. The lowest dopingconcentration of 2.5x1015 cm-3 has been achieved by hot-wall epitaxy using a temperature of1625 °C, a system pressure of 50 hPa, a C/Si ratio of 1.4, and a growth rate of 6.5 2mh-1. Gooddoping homogeneity on 2-inch and 3-inch wafers could be achieved. For a doping level of ND-NA=3×1015 cm-3 sigma is about 15%
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.89.pdf
Permalink
