ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor depositionwere investigated by Deep Level Transient Spectroscopy after irradiation with 6 MeV electrons atroom temperature. This study is focusing on the influence of nitrogen doping and C/Si ratio on thebehaviour of the Z1,2 and EH6,7 levels which occur in already as-grown material but are substantiallyenhanced by electron and ion irradiation. It was found that both the Z1,2 and EH6,7 concentrationsincrease with both the nitrogen doping and the C/Si ratio. However, while the Z1,2 concentrationincreases during post-irradiation thermal treatment the opposite holds for the EH6,7 level especiallyin silicon rich samples. On the basis of these results, the influence of carbon and nitrogen on theformation of the Z1,2 complex is reconfirmed and a possible identity of the EH6,7 defect is discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.461.pdf
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