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  • 2005-2009  (3)
  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 619-624 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The crystallographic structure of semiconductor - insulator - semiconductor (SIS) structuresconsisting of a Si(111) substrate, Pr2O3 and Y2O3 insulating high-k materials, and Si cap layerwas characterized by a combination of X-ray pole figure measurement and conventional X-ray diffraction.Oxide and Si cap layer were grown by molecular beam epitaxy and have the same 111 latticeorientation as the substrate. It is shown that the oxide layers grow in a type B stacking orientationonly, while the epi-layer exhibits exclusively the same type A orientation as the substrate. Asmall fraction of the epi-Si lattice was identified with 511 netplanes parallel to the surface. TEMinvestigations identify these areas as structural defects between Si grains of differing stacking sequence
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 108-109 (Dec. 2005), p. 741-748 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The use of heteroepitaxial Si / Pr2O3 / Si(111) systems as semiconductor-insulatorsemiconductor (SIS) stacks in future applications requires a detailed structural characterization. We used X-ray reflectivity (XRR) to control layer thickness and interface roughness, standard X-ray diffraction (XRD) to analyze the Pr2O3 phase, orientation and crystal perfection, and grazing incidence XRD to study the thin epitaxial Si top layer. Transmission electron microscopy (TEM) was used to prove the results by direct imaging on a microscopic scale. Pr2O3 grows epitaxially in its hexagonal phase and (0001) orientation on Si(111) substrates. An epitaxial Si overgrowth in (111) orientation and good perfection is possible, but such Si layers exhibit two stacking twins, one with the same in-plane orientation as the substrate and one rotated by 180° around the Si [111] direction
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 381-382 (June 2008), p. 465-468 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: State of the art in Coriolis mass flow metering is the single straight tube oscillating inresonance and actuated by one electromagnetic actuator. The difference in time of twoelectro-magnetic sensors measuring the velocity of the vibrating tube at the up- and downstream sideof the tube is directly proportional to mass flow. By using a lumped parameter model consisting oftwo coupled oscillating systems that represent the oscillation in the first and second eigenmode onecan derive the characteristics of the device in terms of zero and sensitivity, two important parametersin today’s mass flowmeters. In [1, 2] these parameters are calculated from measurements obtained byadditionally stimulating the device in the second eigenmode in a cyclic procedure. As onlymeasurements in steady state can be used, the procedure is time consuming and up to now notgenerally applicable. However, these shortcomings can be overcome by using a new control strategy.In this strategy the oscillation of the first and second eigenmode is assigned in terms of amplitude,frequency and phase via a so called trajectory generator and is realized by a flatness-based controlscheme derived from the lumped parameter model. In the paper we will present a method to identifythe parameters zero and sensitivity without the need for a cyclic operation of the device
    Type of Medium: Electronic Resource
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