Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 131-133 (Oct. 2007), p. 619-624
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The crystallographic structure of semiconductor - insulator - semiconductor (SIS) structuresconsisting of a Si(111) substrate, Pr2O3 and Y2O3 insulating high-k materials, and Si cap layerwas characterized by a combination of X-ray pole figure measurement and conventional X-ray diffraction.Oxide and Si cap layer were grown by molecular beam epitaxy and have the same 111 latticeorientation as the substrate. It is shown that the oxide layers grow in a type B stacking orientationonly, while the epi-layer exhibits exclusively the same type A orientation as the substrate. Asmall fraction of the epi-Si lattice was identified with 511 netplanes parallel to the surface. TEMinvestigations identify these areas as structural defects between Si grains of differing stacking sequence
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.619.pdf
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