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  • 1
    Electronic Resource
    Electronic Resource
    Plasma properties determined with induction loop probes in a planar inductively coupled plasma source (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1298-1302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromagnetic fields in a planar rf inductively coupled plasma source, of interest for materials processing, were measured using a two-loop inductive (B-dot) probe. The two loops were oriented to measure the time derivative of the axial and radial components of the magnetic field B(overdot)z and B(overdot)r, respectively, at various positions in the r–z plane of the cylindrically symmetric argon discharge. Maxwell's equations were used with this data to calculate amplitudes of the rf azimuthal electric field Eφ and current density Jφ, as well as the complex permittivity ε of the plasma, from which the electron density ne was calculated. The electron densities calculated using this technique were found to compare favorably to the results of measurements made with Langmuir probes. Electron drift velocities calculated from Jφ and ne were found to be comparable to electron thermal velocities in the region of highest Eφ and thus may contribute to local enhancement of electron impact reactions, thereby affecting process chemistry and uniformity. The peak in the drift velocity moved radially outward as the pressure increased due changes in the radial plasma density profile. This technique is applicable to chemistries where Langmuir probes are not practical. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361025
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  • 2
    Electronic Resource
    Electronic Resource
    Intersubband all-optical limiter based on thermally induced intervalley transfer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7662-7665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose an all-optical limiter based on the thermally induced intervalley transfer of electrons from Γ-valley states with forbidden normal-incidence intersubband interactions to L-valley states which absorb strongly. Detailed modeling of the device performance in the short-pulse regime (≤100 ns) yields that the output intensity for a limiter with only 10% insertion loss at low excitation levels will remain clamped over a dynamic range of 25–40.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365344
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  • 3
    Electronic Resource
    Electronic Resource
    Quantitative mobility spectrum analysis of multicarrier conduction in semiconductors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 709-713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate an optimized quantitative mobility spectrum analysis (QMSA) technique for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity data. The procedure is applied to an In1−xGaxAs–In1−xAlxAs single quantum well, GaAs–AlAs asymmetric double quantum wells, and Hg1−xCdxTe epitaxial thin films containing multiple carrier species. The results illustrate the reliability, versatility, and sensitivity of the analysis, which is fully computer automated following input of the magnetic-field-dependent data. QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor material and device transport properties. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364211
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  • 4
    Electronic Resource
    Electronic Resource
    Measurements of electromagnetic fields in a planar radio-frequency inductively coupled plasma source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 90-96 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromagnetic fields in a planar radio-frequency inductively coupled plasma source were measured using an inductive loop (B-dot) probe. The probe was oriented to measure the time derivative of the axial component of the magnetic field (B(overdot)z). Using these measurements and Faraday's law, taking advantage of cylindrical symmetry, the time varying azimuthal electric field (Eφ) was calculated directly. Contour plots of B(overdot)z and Eφ in the r-z plane show that the radio-frequency electromagnetic fields penetrate further into the plasma at lower gas pressure and lower rf power, corresponding to less effective shielding of the fields at lower plasma density. Estimates of skin depth from the axial decay of the field amplitudes near the axis of the discharge are consistent with values calculated from plasma parameters measured with Langmuir probes, confirming that near the axis the degree of shielding is most strongly dependent on the local plasma density. Near the conducting walls of the chamber, the skin depth calculations from the Langmuir probe data diverge from the B-dot probe data. B-dot probe measurements taken in the absence of plasma show that near the walls of the chamber the axial decay of the field amplitude is partly a geometrical effect in addition to a plasma shielding effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360585
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  • 5
    Electronic Resource
    Electronic Resource
    Shubnikov–de Haas measurements on n- and p-type HgTe-CdTe superlattices (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 303-307 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oscillatory magnetoresistance (Shubnikov–de Haas) measurements have been used to determine free-carrier effective masses in HgTe-CdTe superlattices. Measurements on an n-type superlattice yield an electron mass that is in excellent agreement with theoretical results from a tight-binding band-structure calculation. The p-type data are more complex, showing evidence for a light-hole mass at low magnetic fields and a much heavier mass at fields above 2.0 T. This finding is also in agreement with the predictions of band-structure theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343873
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  • 6
    Electronic Resource
    Electronic Resource
    Synchronizable, injection-locked, Q-switched, mode-locked, and cavity-dumped ten-atmosphere CO2 laser (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 843-851 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel, active, mode-locking scheme for producing single, line-tunable, high-power ultrashort CO2-laser pulses is described. Using an auxiliary grating-tuned cw CO2 laser for injection locking on the 9R(16) line, the Q-switched, mode-locked, and cavity-dumped 10-atm CO2 laser produces single, detection-limited (〈500 ps) pulses of 5-mJ energy at λ=9.29 μm. Details are given on the traveling-wave GaAs Pockels cells, both of which are controlled by a single, ultraviolet (UV) triggered spark gap. The time-locked output pulse is delayed by precisely 300.7 ns with 〈±50 ps jitter against the UV triggered spark gap, so the laser pulse is synchronizable to an external event to 〈±250 ps. To drive the transverse-electric (TE) 10-atm amplifier section, instead of the conventional Marx bank or inductance-capacitance (LC) generator, a new type of circuit is used. The automatically preionized, double-sided LC inversion circuit uses only one spark gap, and a detailed description with operating characteristics is provided.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338133
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  • 7
    Electronic Resource
    Electronic Resource
    Optimum growth parameters for type-II infrared lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1796-1799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface, structural, and optical properties of InAs/InGaSb/AlSb mid-infrared lasers grown by molecular beam epitaxy have been systematically studied, respectively, by Nomarski differential interference contrast, high-resolution x-ray diffraction, and variable-temperature photoluminescence. It is found that the optimum growth temperature is between 400 and 450 °C, based on the calibrated transmission thermometry. In addition, the impact of interfacial bond type and Sb sources has been investigated. A 5.91 μm laser, grown with the optimal growth parameters, exhibits a maximum cw operating temperature of 210 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370971
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  • 8
    Electronic Resource
    Electronic Resource
    Band parameters for III–V compound semiconductors and their alloys (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5815-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368156
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  • 9
    Electronic Resource
    Electronic Resource
    High-speed spin-polarized intersubband lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4734-4739 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-polarized intersubband lasers based on optically pumped type-II antimonide quantum wells in a magnetic field are proposed. Complete discretization of the electron energy spectrum is predicted to extend the electron lifetime considerably. Continuous-wave room-temperature operation is projected for both interband and intersubband pumping configurations lasing at λ=16–24 μm. Furthermore, the parasitic capacitances associated with electrical injection are eliminated, and the large differential gain and fast intrinsic time scale should give modulation bandwidths in excess of 100 GHz. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371437
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  • 10
    Electronic Resource
    Electronic Resource
    Type-II quantum-well "W" lasers emitting at λ=5.4–7.3 μm (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4729-4733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of optically pumped type-II quantum-well "W" lasers with wavelengths ranging from 5.4 to 7.3 μm operated at temperatures up to at least 220 K for pulsed operation. The peak output power at 80 K was 1.1 W/facet for a device emitting at λ=7.0 μm. Internal losses were characterized for the temperature range between 40 and 190 K. Auger coefficients determined from an analysis of the threshold pump intensities were found to be suppressed by up to an order of magnitude compared to type-I III–V semiconductors with the same energy gaps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371436
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