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  • 1
    Electronic Resource
    Electronic Resource
    Monolayer thickness fluctuations in infrared photoluminescence for [211]-oriented HgTe-CdTe superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 545-547 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of multiple photoluminescence peaks due to monolayer thickness fluctuations in HgTe-CdTe superlattices. The spectra for seven different [211]-oriented superlattices with band gaps varying from 133 to 495 meV exhibit double peaks, and in nearly all cases the energy splitting corresponds to a difference of ≈1.5 ML in the quantum well thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111098
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  • 2
    Electronic Resource
    Electronic Resource
    Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3160-3162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have experimentally and theoretically investigated the Auger recombination lifetime in InAs–Ga1−xInxSb superlattices. Data were obtained by analyzing the steady-state photoconductive response to frequency-doubled CO2 radiation, at intensities varying by over four orders of magnitude. Theoretical Auger rates were derived, based on a k⋅p calculation of the superlattice band structure in a model which employs no adjustable parameters. At 77 K, both experiment and theory yield Auger lifetimes which are approximately two orders of magnitude longer than those in Hg1−xCdxTe with the same energy gap. This finding has highly favorable implications for the application of InAs–Ga1−xInxSb superlattices to infrared detector and nonlinear optical devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111325
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  • 3
    Electronic Resource
    Electronic Resource
    Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2857-2859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding to 3.1–4.8 μm, the room-temperature Auger coefficients for seven different samples are found to be nearly an order-of-magnitude lower than typical type-I results for the same wavelength. The data imply that at this temperature, the Auger rate is relatively insensitive to details of the band structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122609
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  • 4
    Electronic Resource
    Electronic Resource
    Design and simulation of low-threshold antimonide intersubband lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 711-713 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically and electrically pumped infrared lasers based on intersubband transitions in InAs/GaSb/AlAsSb quantum wells are modeled in detail. The large conduction-band offset of the AlAsSb barriers with respect to the InAs wells allows the lasing wavelength to be shortened to at least 1.9 μm. Furthermore, the small InAs electron mass results in longer phonon-limited lifetimes in the upper lasing subband as well as larger dipole matrix elements. This leads to the prediction of lower threshold currents, and hence, higher cw operating temperatures than for quantum cascade lasers based on the InGaAs/InAlAs/InP system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121976
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared electroabsorption modulation at normal incidence in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 92-96 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A normal-incidence modulation mechanism is proposed which uses the Stark effect to induce Γ-L transitions in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells (QWs). A significant feature of this structure is the unusual band alignments which localize two deep wells for the Γ and L bands in adjacent layers, i.e., the Γ-valley minimum is in the InAs while the L-valley minimum is in the GaSb. In contrast to a square QW, where the Stark shifts for both Γ and L subbands are in the same direction, the two step wells for Γ and L valleys in the proposed structure are oppositely biased in the presence of an electric field. Therefore, the first Γ and L subbands move toward each other, making the Γ-L crossover occur more efficiently. Near this point, most of the Γ electrons transfer to the L valleys, where they are allowed to make intersubband transitions under normally incident radiation. As a result, the device switches from being transparent to normal-incidence light to strongly absorbing it. The calculations indicate that excellent on/off ratios can be achieved in this structure operating at T≤150 K with electric fields on the order of ∼100 kV/cm for any infrared wavelength within the range of 3–20 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357065
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  • 6
    Electronic Resource
    Electronic Resource
    Anisotropic screening and ionized impurity scattering in semiconductor superlattices and multiple quantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6676-6685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a general theoretical treatment of ionized impurity scattering in semiconductor superlattices. Employing an extension of the quasi-two-dimensional calculations of Stern and Howard to multi-well structures, we explicitly account for nonuniformity of the wavefunction distribution function, arbitrary dispersion relations, scattering by impurities in neighboring periods, and screening by electrons in neighboring wells. Interperiod phenomena are found to be quite significant whenever the screening length is comparable to or longer than the distance between the quantum wells. Calculated results are compared with recent data for modulation-doped and setback-modulation-doped HgTe-CdTe superlattices. However, the discussion emphasizes general aspects of the problem rather than features specific to a particular system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355338
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  • 7
    Electronic Resource
    Electronic Resource
    Enhancement of intersubband Stark effects in L-valley step quantum wells for infrared modulation and voltage tunable detection (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1195-1198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new type of optical modulator employing two-step Ga1−xAlxSb/Ga1−yAlySb/Ga1−zAlzSb L-valley quantum wells to enhance the Stark shifts of the intersubband transition energy and therefore to achieve large absorption spectral changes with applied bias. Due to the effective-mass anisotropy of electrons in the L-valleys and the tilted growth direction with respect to the valleys, this novel structure can intrinsically absorb normal incidence light. Under an electric field of 50 kV/cm, a blue shift of the absorption peak from 10.9 to 9.8 μm was found from our calculations in a Ga0.7Al0.3Sb/Ga0.5Al0.5Sb/Ga0.4Al0.6Sb structure with a Ga0.7Al0.3Sb well width of 25 A(ring) and a Ga0.5Al0.5Sb step width of 25 A(ring). The ability to absorb normally incident light and to achieve significant Stark effects with bias makes this structure an attractive choice for such high-speed optoelectronic devices as vertical infrared light modulators and voltage tunable photodetectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354920
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  • 8
    Electronic Resource
    Electronic Resource
    Normal-incidence electroabsorption in Ga1−xAlxSb/AlSb L-valley quantum wells for 3–5 μm optical modulation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2810-2812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical investigations are presented of the electric-field dependence of normal-incidence interconduction subband absorption in Ga1−xAlxSb/AlSb L-valley quantum wells. Under an applied electric field of 50 kV/cm, a blue shift of the absorption peak from 4.94 to 4.82 μm was found in a Ga0.7Al0.3Sb/AlSb structure with well width of 25 A(ring). The ability to absorb normally incident light and to achieve significant Stark shifts with bias makes the Ga1−xAlxSb/AlSb L-valley system an attractive choice for the 3–5 μm vertical optical modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354630
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  • 9
    Electronic Resource
    Electronic Resource
    Shubnikov–de Haas measurements on n- and p-type HgTe-CdTe superlattices (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 303-307 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oscillatory magnetoresistance (Shubnikov–de Haas) measurements have been used to determine free-carrier effective masses in HgTe-CdTe superlattices. Measurements on an n-type superlattice yield an electron mass that is in excellent agreement with theoretical results from a tight-binding band-structure calculation. The p-type data are more complex, showing evidence for a light-hole mass at low magnetic fields and a much heavier mass at fields above 2.0 T. This finding is also in agreement with the predictions of band-structure theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343873
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  • 10
    Electronic Resource
    Electronic Resource
    Auger recombination in HgCdTe quantum wires and quantum boxes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3394-3398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum-wire and quantum-box structures for narrow-gap materials with small effective masses, such as HgCdTe, can readily be fabricated using current lithographic techniques. In this article, we calculate the Auger-recombination carrier lifetimes in HgCdTe quantum-wire and quantum-box structures, with band gaps in the 2–5 μm wavelength range. Quantum confinement is generally believed to increase the carrier lifetimes. However, we find the Auger recombination lifetime in a HgCdTe quantum wire is shorter than that in a quantum well, and it decreases as the wire width decreases because of the corresponding increase in the density of states. On the other hand, band-to-band Auger recombination is zero in a quantum box because the overlap functions vanish and because of the discrete nature of the energy levels. Therefore, within the confines of our model, we can expect improved temperature performance from long-wavelength quantum-box lasers but not from quantum-wire lasers. Furthermore, these conclusions are applicable for all types of band-to-band Auger processes and semiconductor materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350935
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