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  • 1
    Electronic Resource
    Electronic Resource
    A plan for on-line production and acceleration of radioactive isotope beams by use of electron cyclotron resonance ion source NANOGAN : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 777-779 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For the precise low background experiments on β decay and material sciences, we are planning to build a new ISOL-type facility to accelerate various β-radioactive nuclei utilizing the existing 5 MV Van de Graaff accelerator and an RFQ linac. Present status of the designing work is reported. In the present work, optical elements of the 41-m-long beam transport line to connect Van de Graaff accelerator and an RFQ linac were designed. Using two dipole magnets, two electric quadrupole doublets and six electric quadrupole triplets, low energy radioactive nuclear beams can be transported with sufficient efficiency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150291
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  • 2
    Electronic Resource
    Electronic Resource
    Flexible carbonaceous and graphitized films by pyrolytic chemical-vapor-deposition method from hydrocarbons containing oxygen atoms (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 881-884 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbonaceous films with high conductivity have been prepared by a pyrolytic chemical-vapor-deposition method using hydrocarbons containing oxygen atoms, phenols, carboxylic acids, etc. The films obtained are self-supporting and flexible. The electrical conductivities of the films depend on the pyrolyzing temperature but not remarkably on the kind of raw materials. The films are converted to high-quality graphitized films with conductivity of 1.6×104 S/cm by heating under an Ar atmosphere to 2800 °C. The electrical conductivity and thermoelectric power of the films are examined as a function of the heat-treatment temperatures. The excellent property of the films obtained in this study seems to arise from the effect of oxygen atoms in the process of condensed aromatic ring formation by pyrolysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343514
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  • 3
    Electronic Resource
    Electronic Resource
    Core-level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high-resolution x-ray photoelectron spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2049-2051 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical shifts of Si–Hx (x=1,2) species on Si surfaces obtained by ex situ chemical treatment have been evaluated by high-resolution x-ray photoelectron spectroscopy at a take-off angle of 5°. Optimizing the water rinse and sample loading conditions enables identification of the Si–Hx components of the Si 2p core-level spectra, whose intensities display strong dependence on crystallographic orientation and surface treatment. NH4F-treated Si(111) exhibits almost exclusive monohydride termination which induces a chemical shift of 250 meV relative to the bulk component. On the other hand, 4.5% HF-treated Si(111) and 1% HF-treated Si(100) surfaces show increased dihydride termination with an associated shift of 480 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115074
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  • 4
    Electronic Resource
    Electronic Resource
    A time pickup system for monitoring cyclotron beam bursts (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 51-55 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a time pickup system for monitoring the beam bursts from a cyclotron. The time pickup can measure the phase and the width of the beam bursts by detecting secondary electrons emitted from a foil or a wire target inserted into the beam with time resolutions around 200 ps full width at half maximum in spite of its simple structure. By using the foil and the wire targets appropriately, monitoring the bursts of a variety of beams can be achieved. In addition, by adjusting the position of the target, a high enough detection rate of the beam burst is obtained with a minimum of interference with the beam. The present investigation shows that it is needed to adjust the collection voltage of the time pickup because the optimum collection voltages for high resolution measurement are in the range from −0.5 to −1.0 kV and those for high efficiency measurement are not less than −4.0 kV. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416116
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  • 5
    Electronic Resource
    Electronic Resource
    Performance and operation of a beam chopping system for a cyclotron with multiturn extraction (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1714-1719 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A beam chopping system for a cyclotron is in operation at the JAERI cyclotron facility. A combination of a pulse voltage chopper in the injection line and a sinusoidal voltage chopper after the exit of the cyclotron is adopted to produce beam pulses spaced at 1 μs–1 ms intervals from natural cyclotron beams. The chopping system was designed according to a simple formulation of the chopping process in which the multiturn extraction was taken into account. Performance of the chopping system was experimentally proved to satisfy requirements of the design. In actual operation to produce beam pulses at long intervals, however, the number of the multiturn extraction is usually larger than the assumed value in the design because of a large phase acceptance of the cyclotron. Careful tuning of the acceleration phase width or the base magnetic field of the cyclotron is necessary to reduce it. It is essential to strictly define the acceleration phase of injected beams in the central region of the cyclotron to improve this situation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147980
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  • 6
    Electronic Resource
    Electronic Resource
    Degradation behaviors of buried heterostructure InGaAsP/InP distributed feedback lasers grown by liquid-phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 496-499 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some degradation modes of 1.3 and 1.55 μm buried heterostructure distributed feedback (DFB) lasers grown by liquid-phase epitaxy are clarified. A degradation mode induced by the inhomogeneous optical-field distribution along the laser cavity is found to exist in DFB lasers. In most DFB lasers, the interface degradation between first growth-step (double heterostructure) layers and second growth-step (burying) layers occurs in the same manner as Fabry–Perot lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341987
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  • 7
    Electronic Resource
    Electronic Resource
    Quantum confinement effect in self-assembled, nanometer silicon dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3881-3883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first subband energy at the valence band of self-assembled silicon quantum dots grown by low-pressure chemical vapor deposition on ultrathin SiO2/Si substrates has been measured as an energy shift at the top of the valence band density of states by using high-resolution x-ray photoelectron spectroscopy. The systematic shift of the valence band maximum towards higher binding energy with decreasing the dot size is shown to be consistent with theoretical prediction. The charging effects of the silicon dots and the SiO2 layer by photoelectron emission during the measurements have been taken into account in determining the valence-band-edge energy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122923
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  • 8
    Electronic Resource
    Electronic Resource
    Resonant tunneling through a self-assembled Si quantum dot (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2291-2293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-scale Si quantum dots have been spontaneously fabricated on SiO2 by controlling the early stages of low-pressure chemical vapor deposition from pure silane. The tunneling current through Au/1 nm-SiO2/a single Si quantum dot/1 nm-SiO2/n+-Si(100) double-barrier structures has exhibited the clear current bump or negative conductance at 300 K with a peak current to valley ratio as high as 10. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118816
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  • 9
    Electronic Resource
    Electronic Resource
    Dental rehabilitation using endosseous implants and orthognathic surgery in patients with cleft lip and palate: report of two cases (2000)
    Oxford, UK : Blackwell Science Ltd
    Journal of oral rehabilitation 27 (2000), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We describe the use of endosseous implants in the autogenous particulate cancellous bone and marrow grafted alveoli after orthognathic surgery for dental rehabilitation of patients with cleft lip and palate. This procedure has been applied to two patients and produced good results functionally and aesthetically. The results are encouraging and indicate that implant placement after orthognathic surgery is useful for patients both with congenital missing teeth and retrognathic maxillae.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2842.2000.00539.x
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  • 10
    Electronic Resource
    Electronic Resource
    Dentoalveolar reconstruction of a missing premaxilla using bone graft and endosteal implants (2003)
    Oxford, UK : Blackwell Science Ltd
    Journal of oral rehabilitation 30 (2003), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: summary  We report here on a patient with bilateral cleft lip and palate (BCLP) and a missing premaxilla, who underwent dentoalveolar reconstruction of the cleft and premaxillary alveolus using endosteal implants after bone grafting. The patient, whose maxillary incisors and premaxilla were missing, had corticocancellous bone grafting from the iliac crest, followed by excellent bone formation at the anterior alveolus. After the placement of the endosteal implants and the completion of the pre-surgical orthodontic alignment, orthognathic surgery was performed for the restoration of a Class III open bite. After post-operative orthodontic preparation, the final fixed prostheses were completed. This treatment procedure offers an option of dentoalveolar reconstruction for BCLP patients with an excised premaxilla.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2842.2003.00999.x
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