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  • 1
    Electronic Resource
    Electronic Resource
    High-speed spin-polarized intersubband lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4734-4739 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-polarized intersubband lasers based on optically pumped type-II antimonide quantum wells in a magnetic field are proposed. Complete discretization of the electron energy spectrum is predicted to extend the electron lifetime considerably. Continuous-wave room-temperature operation is projected for both interband and intersubband pumping configurations lasing at λ=16–24 μm. Furthermore, the parasitic capacitances associated with electrical injection are eliminated, and the large differential gain and fast intrinsic time scale should give modulation bandwidths in excess of 100 GHz. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371437
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  • 2
    Electronic Resource
    Electronic Resource
    Does high density–low pressure etching depend on the type of plasma source? (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 2197-2202 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching of SiO2 with CF4 in three types of high density–low pressure (5×1011 cm−3, 1–10 mTorr) etch tools: electron cyclotron resonance (ECR), inductively coupled (ICP), and helicon (HRF) is described. Although the physical processes that produce the plasma in the three types of sources are quite different, the etch rate processes are identical when viewed from the wafer sheath boundary. Measurements demonstrate that if sufficient fluorine is present, the etch rate limiting step depends only on the ion energy flux to the wafer, rather than on the details of the chemical species. Etch rate control depends only on the wafer bias power. Experimental results are device independent so the etch rate in high density–low pressure plasma sources does not depend on the plasma source power. Major differences in tool etch rate characteristics are more likely determined by tool wall material (and wall chemistry) and tool geometry rather than the physical process that is used to produce the plasma. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871675
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma properties determined with induction loop probes in a planar inductively coupled plasma source (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1298-1302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromagnetic fields in a planar rf inductively coupled plasma source, of interest for materials processing, were measured using a two-loop inductive (B-dot) probe. The two loops were oriented to measure the time derivative of the axial and radial components of the magnetic field B(overdot)z and B(overdot)r, respectively, at various positions in the r–z plane of the cylindrically symmetric argon discharge. Maxwell's equations were used with this data to calculate amplitudes of the rf azimuthal electric field Eφ and current density Jφ, as well as the complex permittivity ε of the plasma, from which the electron density ne was calculated. The electron densities calculated using this technique were found to compare favorably to the results of measurements made with Langmuir probes. Electron drift velocities calculated from Jφ and ne were found to be comparable to electron thermal velocities in the region of highest Eφ and thus may contribute to local enhancement of electron impact reactions, thereby affecting process chemistry and uniformity. The peak in the drift velocity moved radially outward as the pressure increased due changes in the radial plasma density profile. This technique is applicable to chemistries where Langmuir probes are not practical. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361025
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  • 4
    Electronic Resource
    Electronic Resource
    Intersubband all-optical limiter based on thermally induced intervalley transfer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7662-7665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose an all-optical limiter based on the thermally induced intervalley transfer of electrons from Γ-valley states with forbidden normal-incidence intersubband interactions to L-valley states which absorb strongly. Detailed modeling of the device performance in the short-pulse regime (≤100 ns) yields that the output intensity for a limiter with only 10% insertion loss at low excitation levels will remain clamped over a dynamic range of 25–40.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365344
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  • 5
    Electronic Resource
    Electronic Resource
    Measurements of electromagnetic fields in a planar radio-frequency inductively coupled plasma source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 90-96 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromagnetic fields in a planar radio-frequency inductively coupled plasma source were measured using an inductive loop (B-dot) probe. The probe was oriented to measure the time derivative of the axial component of the magnetic field (B(overdot)z). Using these measurements and Faraday's law, taking advantage of cylindrical symmetry, the time varying azimuthal electric field (Eφ) was calculated directly. Contour plots of B(overdot)z and Eφ in the r-z plane show that the radio-frequency electromagnetic fields penetrate further into the plasma at lower gas pressure and lower rf power, corresponding to less effective shielding of the fields at lower plasma density. Estimates of skin depth from the axial decay of the field amplitudes near the axis of the discharge are consistent with values calculated from plasma parameters measured with Langmuir probes, confirming that near the axis the degree of shielding is most strongly dependent on the local plasma density. Near the conducting walls of the chamber, the skin depth calculations from the Langmuir probe data diverge from the B-dot probe data. B-dot probe measurements taken in the absence of plasma show that near the walls of the chamber the axial decay of the field amplitude is partly a geometrical effect in addition to a plasma shielding effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360585
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  • 6
    Electronic Resource
    Electronic Resource
    Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2857-2859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding to 3.1–4.8 μm, the room-temperature Auger coefficients for seven different samples are found to be nearly an order-of-magnitude lower than typical type-I results for the same wavelength. The data imply that at this temperature, the Auger rate is relatively insensitive to details of the band structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122609
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  • 7
    Electronic Resource
    Electronic Resource
    High-temperature type-II superlattice diode laser at λ=2.9 μm (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3607-3609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 2.9 μm diode laser with InAs/GaSb/Ga0.75In0.25Sb/GaSb superlattice active region displays a maximum operating temperature of 260 K. At 200 K, the threshold current density is 1.1 kA/cm2 and the quantum efficiency is 〉15%. The peak output power per facet exceeds 800 mW at 100 K and 200 mW at 200 K for a 0.05% duty cycle. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120455
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  • 8
    Electronic Resource
    Electronic Resource
    Midinfrared vertical-cavity surface-emitting laser (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3483-3485 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a type-II antimonide midinfrared vertical-cavity surface-emitting laser. The emission wavelength of 2.9 μm is nearly independent of temperature (dλ/dT(approximate)0.07 nm/K) and the multimode linewidth is quite narrow (3.5 nm). The pulsed threshold power at 86 K is as low as 22 mW for a 30 μm spot. Lasing is observed up to T=280 K, and the peak output power from a 600 μm spot exceeds 2 W up to 260 K. The differential power conversion efficiency is 〉1% at 220 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120366
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  • 9
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Normal incidence second-harmonic generation in L-valley AlSb/GaSb/Ga1−xAlxSb/AlSb stepped quantum wells' '' [Appl. Phys. Lett. 68, 1872 (1996)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1873-1873 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116126
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  • 10
    Electronic Resource
    Electronic Resource
    Role of internal loss in limiting type-II mid-IR laser performance (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2384-2391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an experimental and theoretical investigation of internal losses in optically pumped type-II lasers with InAs/GaSb/Ga1−xInxSb/GaSb superlattice active regions. Whereas the losses are found to be moderate at 100 K (11–14 cm−1), they increase rapidly with increasing temperature (to 50–120 cm−1 at 200 K). Comparison with a detailed numerical simulation shows that the internal losses play a much more important role than Auger recombination or carrier/lattice heating in limiting the laser performance at high temperatures. Calculations of the temperature-dependent intervalence absorption cross sections show that losses of the magnitude observed experimentally can easily occur if one does not take special care to avoid resonances in all regions of the Brillouin zone. Practical design guidelines are presented. The superlattice lasers yield maximum peak output powers of up to 6.5 W per facet at 100 K and 3.5 W per facet at 180 K, threshold incident pump intensities as low as 340 W/cm2 at 100 K, and Shockley–Read lifetimes 〉30 ns at 100 K. The Auger coefficients are suppressed (≤1.6×10−27 cm6/s at T=260 K) despite the intervalence resonances which produce the high internal losses. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366997
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