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  • 11
    Electronic Resource
    Electronic Resource
    Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 707-709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures (with the electron sheet concentration ns(approximate)1013 cm−2) grown on conducting 6H–SiC substrates in the temperature range T=0.3–300 K. The electron mobility in AlGaN–GaN heterostructures grown on SiC was higher than in those on sapphire substrates, especially at cryogenic temperatures. The highest measured Hall mobility at room temperature was μH=2019 cm2/V s. At low temperatures, the electron mobility increased approximately five times and saturated below 10 K at μH=10250 cm2/V s. The experimental results are compared with the electron mobility calculations accounting for various electron scattering mechanisms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120852
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  • 12
    Electronic Resource
    Electronic Resource
    High quality GaN–InGaN heterostructures grown on (111) silicon substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3566-3568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117247
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  • 13
    Electronic Resource
    Electronic Resource
    Electron beam induced current measurements of minority carrier diffusion length in gallium nitride (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2531-2533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Minority carrier diffusion length in epitaxial GaN layers was measured as a function of majority carrier concentration and temperature. The diffusion length of holes in n-type GaN is found to decrease from 3.4 to 1.2 μm in the doping range of 5×1015–2×1018 cm−3. The experimental results can be fitted by assuming the Einstein relation and by the experimental dependence of hole mobilities on carrier concentration. The low injection carrier lifetime of ∼15 ns, used in the fit, is largely independent of the doping level. The diffusion length, measured for ∼5×1015 and 2×1018 cm−3 dopant concentrations, shows an increase with increasing temperature, characterized by an activation energy Ea of ∼90 meV, independent of the impurity concentration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117729
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  • 14
    Electronic Resource
    Electronic Resource
    Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 514-516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Al0.1Ga0.9N/GaN heterojunction field effect transistors, both an enhancement mode and a depletion mode with a low pinchoff voltage, suitable for digital integrated circuit applications. For an enhancement mode device with a 1 μm gate length and 5 μm drain-to-source separation, the dc transconductance is around 23 mS/mm. Connecting the enhancement mode device as a switching transistor and a depletion mode device as a load, we demonstrate an AlGaN/GaN inverter. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116384
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  • 15
    Electronic Resource
    Electronic Resource
    Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1444-1446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Mg-doped green light emitting diodes (LEDs) over cubic (111) MgAl2O4 substrates with a very strong impurity band electroluminescence. A 0.2-micron-thick Mg-doped In0.13Ga0.87N layer was used in the active region of mesa type LED structures. The emission spectrum was centered at 510 nm (green) with a full-width at half-maximum of 60 nm. At a forward bias current of 20 mA the output power and the external quantum efficiency were about 200 μW and 0.3%. The origin of green light in the Mg-doped In0.13Ga0.87N layer has also been studied by time resolved photoluminescence. Our study demonstrates impurity band LEDs to be a viable alternative to band edge emission green LEDs with high indium mole fractions in the active region. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118557
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  • 16
    Electronic Resource
    Electronic Resource
    Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2418-2420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an optically pumped multiple-quantum-well laser of InGaN–GaN grown on cubic, (111)-oriented spinel substrates. The laser cavity is formed by cleaving. Atomic force microscopy shows that the cleaved GaN and spinel facets are of similar flatness. The onset of lasing is clearly demonstrated by the saturation of spontaneous emission, abrupt line narrowing, and the highly polarized light output. A lasing threshold power of 140 kW/cm2 is measured in a 400-μm-long cavity at 150 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117656
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  • 17
    Electronic Resource
    Electronic Resource
    High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1267-1269 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as ΦB=1.13 eV by the current–voltage (I–V) method and ΦB=1.27 eV by the capacitance–voltage (C–V) method for the Pt/GaN diode, and ΦB=1.11 eV, ΦB=0.96 eV, and ΦB=1.24 eV by I–V, activation energy (I–V–T), and C–V methods for the Pd/GaN diode, respectively. The ideality factors were obtained to be n∼1.10. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115948
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  • 18
    Electronic Resource
    Electronic Resource
    Piezoresistive effect in wurtzite n-type GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 818-819 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the measurements of the piezoresistive effect in the n-type wurtzite GaN films. The 3–5 μm thick GaN layers were deposited slightly off axis over basal plane sapphire substrates. The static and dynamic gauge factor (GF) of these structures was measured at room temperature for both longitudinal and transverse configurations. The dynamic effect is related to a strong piezoeffect in GaN. The maximum dynamic GF observed was ∼130 (approximately four times larger than for SiC). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116543
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  • 19
    Electronic Resource
    Electronic Resource
    Hall measurements and contact resistance in doped GaN/AlGaN heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3022-3024 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on doped AlGaN/GaN heterostructures with very high values of the sheet electron concentration (up to approximately 1.5×1013 cm−2), high Hall mobility (on the order of 800 cm2/Vs) and high sheet concentration-mobility product (up to approximately 1016 1/Vs). Transmission line model measurements of the contact resistance to these layers show that series resistance is considerably reduced by doping the GaN channel. A contact resistance of 2.3 Ω mm is demonstrated for the structure with the highest sheet carrier concentration, which corresponds to ≈8.8×10−5 Ω cm2 specific contact resistance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116684
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  • 20
    Electronic Resource
    Electronic Resource
    Charge transfer in charge-coupled devices fabricated on AlGaN/GaN heterostructures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1403-1405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication and operation characteristics of linear array charge-coupled devices on AlGaN/GaN heterostructures are reported. In transistor mode, a three-stage device behaved as a multiple-gated field effect transistor with a transconductance of 12.8 mS/mm. In shift register mode, charge packages can be injected at one side and detected at the other side with a delay corresponding to the number of transfer electrodes of the device. At a transfer frequency of 6 MHz, the devices exhibited an estimated charge transfer efficiency of 0.94. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121957
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