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  • 2000-2004  (5)
  • 1995-1999  (13)
  • 1
    Electronic Resource
    Electronic Resource
    RGS7 Is Palmitoylated and Exists as Biochemically Distinct Forms (2000)
    Oxford UK : Blackwell Science Ltd.
    Journal of neurochemistry 75 (2000), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Regulator of G protein signaling (RGS) proteins are GTPase-activating proteins that modulate neurotransmitter and G protein signaling. RGS7 and its binding partners Gα and Gβ5 are enriched in brain, but biochemical mechanisms governing RGS7/Gα/Gβ5 interactions and membrane association are poorly defined. We report that RGS7 exists as one cytosolic and three biochemically distinct membrane-bound fractions (salt-extractable, detergent-extractable, and detergent-insensitive) in brain. To define factors that determine RGS7 membrane attachment, we examined the biochemical properties of recombinant RGS7 and Gβ5 synthesized in Spodoptera frugiperda insect cells. We have found that membrane-bound but not cytosolic RGS7 is covalently modified by the fatty acid palmitate. Gβ5 is not palmitoylated. Both unmodified (cytosolic) and palmitoylated (membrane-derived) forms of RGS7, when complexed with Gβ5, are equally effective stimulators of Gαo GTPase activity, suggesting that palmitoylation does not prevent RGS7/Gαo interactions. The isolated core RGS domain of RGS7 selectively binds activated Gαi/o in brain extracts and is an effective stimulator of both Gαo and Gαi1 GTPase activities in vitro. In contrast, the RGS7/Gβ5 complex selectively interacts with Gαo only, suggesting that features outside the RGS domain and/or Gβ5 association dictate RGS7-Gα interactions. These findings define previously unrecognized biochemical properties of RGS7, including the first demonstration that RGS7 is palmitoylated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.2000.0752103.x
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic properties and imaging of Mn-implanted GaAs semiconductors : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5296-5298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Submicron ferromagnets have been successfully incorporated into GaAs semiconductors by Mn+ ion implantation and subsequent heat treatment. Transmission electron microscopy, x-ray fluorescence spectrum analysis, and atomic force microscopy are used to structurally characterize the GaMn precipitates which form within the GaAs matrix. These crystallites are room-temperature ferromagnets with controllable magnetic properties. Magnetic force microscopy images reveal that unmagnetized samples contain both magnetic dipoles and quadrupoles, but that after magnetization the single-domain state predominates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361356
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  • 3
    Electronic Resource
    Electronic Resource
    Assembly and imaging of submicron ferromagnets in GaAs (invited) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4331-4335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Submicron room-temperature ferromagnets are formed in GaAs semiconductors through a simple process of ion implantation and subsequent heat treatment. The ferromagnetic structures are studied using magnetic force microscopy. Magnetization switching of single-domain particles has been directly imaged in applied magnetic fields. In order to understand the images of magnetic structures taken under external fields, we have characterized the magnetic force microscopy (MFM) probes by imaging microfabricated current-carrying strips in applied magnetic fields. Patterned micrometer scale lines containing submicron magnetic structures on GaAs are fabricated using lithography in conjunction with broad beam ion implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364760
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetization vortices and anomalous switching in patterned NiFeCo submicron arrays (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2525-2527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Switching characteristics of 20-nm-thick NiFeCo submicron arrays are systematically studied by means of magnetometry, magnetic force microscopy, and micromagnetic simulation based on solution of the Landau–Lifshitz–Gilbert equation. A switching anomaly found in these structures could not be described by the magnetization coherent rotation model. Both experimental data and simulation results indicate that trapped magnetization vortices are responsible for the switching anomaly. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123887
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature dependent switching properties of patterned 200 nm Ni81Fe19 elements (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3821-3823 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quasistatic magnetization switching of patterned 200 nm wide Ni81Fe19 elements has been systematically studied over a wide range of temperatures. In large aspect-ratio elements, the switching field between two bistable magnetization states decreases linearly as the temperature increases, in good agreement with thermally activated nucleation theory. In small aspect-ratio elements, however, switching occurs through a third stable state: the magnetization vortex state. Although the switching mechanism is drastically different in these small aspect-ratio structures, the switching fields also are linearly dependent on temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424470
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  • 6
    Electronic Resource
    Electronic Resource
    Edge-pinned states in patterned submicron NiFeCo structures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1692-1694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization reversal in patterned submicron NiFeCo structures has been studied. Application of a transverse field lowers the easy axis switching threshold of the center of the structures but the edge magnetization remains pinned along the initial direction until a higher reversal field is applied. Complete switching between the two stable magnetization states occurs only after depinning and reversal of the edge magnetization. The edge depinning field is found to be very insensitive to the transverse field strength. Micromagnetic simulations are used to characterize the magnetization reversal process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290599
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  • 7
    Electronic Resource
    Electronic Resource
    Geometry dependence of magnetization vortices in patterned submicron NiFe elements (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2588-2590 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When the magnetization is switched in patterned submicron Ni80Fe20 thin-film elements, magnetization vortices, local micromagnetic structures with a core size of 10 nm, are often trapped. This lowers the magnetostatic self-energy of the elements. Trapped vortices can cause anomalous switching during spin reversal between stable magnetization states. To expel trapped vortices, a large external magnetic field, the vortex exit field, is required. The dependence of the vortex exit field on lateral dimensions of the patterned elements is measured. In the limit where the lateral dimensions of the patterned elements are much larger than the vortex core size, smaller structures are more prone to the formation of trapped vortices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126417
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  • 8
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in organic spin-valves (2004)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 427 (2004), S. 821-824 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] A spin valve is a layered structure of magnetic and non-magnetic (spacer) materials whose electrical resistance depends on the spin state of electrons passing through the device and so can be controlled by an external magnetic field. The discoveries of giant magnetoresistance and tunnelling ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02325
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  • 9
    Electronic Resource
    Electronic Resource
    Cell transformation by the superoxide-generating oxidase Mox1 (1999)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 401 (1999), S. 79-82 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Reactive oxygen species (ROS) generated in some non-phagocytic cells are implicated in mitogenic signalling and cancer. Many cancer cells show increased production of ROS, and normal cells exposed to hydrogen peroxide or superoxide show increased proliferation and express growth-related genes. ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/43459
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  • 10
    Electronic Resource
    Electronic Resource
    Assembly of submicrometre ferromagnets in gallium arsenide semiconductors (1995)
    [s.l.] : Nature Publishing Group
    Nature 377 (1995), S. 707-710 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The semiconductor samples are grown by molecular beam epitaxy on semi-insulating GaAs substrates, and consist of 500-nm undoped GaAs epitaxial layers grown atop 50-nm AlAs and a 500-nm GaAs buffer. These structures are then uniformly implanted with Mn+ ions at energies of 50 and 200 keV ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/377707a0
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