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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties and imaging of Mn-implanted GaAs semiconductors : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5296-5298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Submicron ferromagnets have been successfully incorporated into GaAs semiconductors by Mn+ ion implantation and subsequent heat treatment. Transmission electron microscopy, x-ray fluorescence spectrum analysis, and atomic force microscopy are used to structurally characterize the GaMn precipitates which form within the GaAs matrix. These crystallites are room-temperature ferromagnets with controllable magnetic properties. Magnetic force microscopy images reveal that unmagnetized samples contain both magnetic dipoles and quadrupoles, but that after magnetization the single-domain state predominates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361356
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  • 2
    Electronic Resource
    Electronic Resource
    Femtosecond near-field spin microscopy in digital magnetic heterostructures (invited) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6095-6100 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have designed a low-temperature femtosecond-resolved near-field scanning optical microscope to study spatiotemporal excitonic spin behavior in magnetic semiconductor heterostructures. Local disorder introduced by focused-ion-beam implantation reduces the otherwise large Zeeman splittings in modest magnetic fields, creating a planar spin-dependent energy landscape for diffusing carriers. Near-field polarization-resolved static and femtosecond measurements map out excitonic spin behavior with ∼125 nm spatial resolution, revealing spin-dependent diffusion. We demonstrate the applicability of two distinct time-resolved techniques in the near field, and discuss limitations on the measurement of polarized luminescence from semiconductors in the near field. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362101
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant amplification of spin transferred across a GaAs/ZnSe interface (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5073-5075 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved Kerr rotation and resonant spin amplification are used to study spin dynamics in ZnSe epilayers and across a GaAs/ZnSe interface. In accord with previous studies in GaAs we find that modest n doping of ZnSe epilayers enhances spin lifetimes over three orders of magnitude at low temperatures. Lifetimes reaching 60 ns are seen at low doping concentrations at temperatures from 5 to 50 K. A recently developed two-color technique of time-resolved Kerr rotation is used to excite electron spins in a GaAs substrate and to measure their arrival in an adjacent ZnSe epilayer. We find that resonant spin amplification may be used to increase the net spin transferred to the ZnSe, and discover that interlayer transport extends spin lifetimes 100-fold. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373252
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  • 4
    Electronic Resource
    Electronic Resource
    Lateral drag of spin coherence in gallium arsenide (1999)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 397 (1999), S. 139-141 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The importance of spin-transport phenomena in condensed-matter physics has increased over the past decade with the advent of metallic giant-magnetoresistive systems and spin-valve transistors. An extension of such phenomena to semiconductors should create possibilities for seamless integration ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/16420
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