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  • 2000-2004  (55)
  • 1995-1999  (95)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4957-4959 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied two different types of epitaxial ferromagnetic MnAs thin films on Si (001) substrates grown by molecular beam epitaxy. When the Si substrates were annealed at a relatively high temperature (∼900 °C) and then MnAs was grown, we obtained epitaxial MnAs films with twofold crystal symmetry (type I). In contrast, when the thermal cleaning of the Si substrate was done at a lower temperature (∼600 °C), epitaxial MnAs thin films had fourfold crystal symmetry (type II). The growth plane in both types of MnAs thin films was the (1¯101) of the hexagonal MnAs. The type I MnAs films are single domain with strong magnetic anisotropy, whereas the type II MnAs films are double domain with the lack of strong magnetic anisotropy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial MnAs films on GaAs(001) in the thickness range 20–200 nm were studied. Using ordinary and extraordinary Hall effect data to determine the field required for perpendicular saturation and saturation magnetizations reported elsewhere, we determined the shape anisotropy constant in the basal plane of the hexagonal structure to be 3.7(0.6)×105 erg/cm3 and the surface anisotropy constant to be −1.3(0.4) erg/cm2. The negative sign indicates thin enough films will be perpendicularly magnetized. By magnetic force microscopy of a 100 nm film we found stripe domains with 180° Bloch walls, thereby avoiding the hard c axis. The widths of the domains and the walls are 4.0(0.3) μm and 95(6) nm, respectively. In magnetoresistance, we observed behavior similar to other ferromagnets, namely peaks centered around the positive and negative coercive fields, and at fields beyond the coercive field a linear dependence on magnetic field. The electrical resistance showed rapid increase with temperature beginning about 5° below the Curie temperature (40 °C) caused by the change in crystal structure from hexagonal to orthorhombic. The resistivities are, respectively, 300(24) and 375(30) μΩ cm. Comparison with bulk values indicates the large lower temperature value is partly due to the presence of some orthorhombic phase observed in x-ray studies. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1435-1440 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferromagnetic MnAs thin films grown on GaAs (001) substrates by molecular-beam epitaxy have been studied by the methods of grazing incidence x-ray scattering, x-ray diffraction, and extended x-ray-absorption fine structure. Microstructures in two films prepared with different first-layer growth conditions (template effects) are compared in terms of the interfacial roughness in the layer structure, lattice constants, epilayer thickness, local environment surrounding the Mn atoms, coordination number, and local disorder. Our results indicate that the template effects can cause significant differences in the local structures and crystallinity of the MnAs epitaxial layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7281-7283 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated semiconductor-based magnetic superlattices (SLs) containing GaAs:MnAs granular material in which MnAs nanoclusters are embedded in GaAs, and have characterized their structural, optical, and magneto-optical properties. SLs consisting of GaAs:MnAs and AlAs are shown to have good crystalline quality and excellent compatibility with nonmagnetic GaAs/AlAs heterostructures. The optical transmission properties were improved in the SLs, while keeping the strong magneto-optical properties of GaAs:MnAs. We used these magnetic SLs in a semiconductor-based magnetic microcavity as the central magnetic layer, and its optical transmission was found to have improved compared with our previous multilayer structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4673-4675 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Introduction of a ferromagnetic quantum well in a ferromagnetic tunnel junction is shown to greatly enhance the tunneling magnetoresistance (TMR) effect, due to spin filtering as well as energy filtering. We have theoretically analyzed resonant transmission probability of a magnetic double barrier heterostructure consisting of III–V based ferromagnetic semiconductor GaMnAs, and nonmagnetic semiconductor AlAs. Experimentally, we have observed very large TMR effect of such a system grown by low-temperature molecular-beam epitaxy, and have shown that some of the measured tunneling features are attributed to spin-dependent resonant tunneling. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6695-6697 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have succeeded in growing MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs(111)B substrates by molecular-beam epitaxy. Double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. Magnetoresistance (MR) curves in current-in-plane geometry showed the spin-valve effect, which was caused by the change of the magnetic alignment of the two ferromagnetic MnAs layers from parallel to antiparallel orientation. Temperature dependence of the MR was also investigated. We infer that the positive temperature coefficient of the MR by the spin-valve effect suggests the heat (carrier) induced interlayer exchange coupling. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4911-4915 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A volume production type microwave negative ion source has been developed for negative ion beam processes such as ion implantation and ion beam deposition, etc. In order to increase efficiency of negative oxygen ion production, we employed a double plasma cell system in which two plasma cells were connected to each other. A high density primary plasma was generated in the first plasma cell with 2.45 GHz microwave power and negative ions were effectively generated in the second plasma cell. A filter magnetic field of about 0.1 T was applied on the second plasma cell to prevent diffusion of high energy electrons from the first plasma cell. Oxygen negative ion beams were generated by this method and the maximum oxygen (O−) ion current of 142 μA (current density: 325 μA/cm2) was extracted continuously from the ion source at an extraction voltage of 30 kV and a microwave power of 500 W. This value was three orders larger than that obtained by a single plasma cell system without the filter magnetic field. Molecular oxygen ions (O−2 and O−3) were also obtained at percentages of about 20% and 2% of the major O− ion intensity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1125-1127 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Filamentless negative ion beam production was investigated with a compact microwave ion source (2.45 GHz). One of the key points for negative ion production is the magnetic configuration. A magnetic filter field to lower electron temperature was generated in a negative ion production cell, which was shielded magnetically from a discharge cell with a magnetic field to couple microwave to plasma. Production of H− beam was studied with this source. H− was extracted through a grid slit (2×16 mm2) from plasma and accelerated to 20–40 keV. H− beam current was measured with a Faraday cup after magnetic mass separation. Continuous H− beam current of 73 μA (0.23 mA/cm2) was obtained with a magnetron power of 700 W. H− beam current was increased around 1.4 times by adding Xe gas to the H2 gas. Other negative ion species, which have a potential for applications to industrial ion beam processing with little charge-up problem, were also investigated. Carbon and hydrocarbon negative ion beams were produced using boron alkoxide (B(OCH3)3) and methane. C2H2− beams (22 μA) were obtained with the alkoxide. C2−(1.6 μA), C2H−(2.3 μA), C2H2−(0.6 μA), and H−(6.9 μA) beams were produced with methane. SiF4 and BF3 were used to generate F−, Si−, SiF3− and B− beams. Beam currents of these ion species were 17, 0.25, 1.5, and 0.03 μA, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In negative-ion-based neutral beam injection (NBI) systems for the large helical device (LHD), beams must be transported over 13 m from the H− ion source to the injection port. In order to clarify beam deflection by the electron deflection magnets set in a beam extraction grid (EG) and to control beam transport direction, we analyzed beam trajectories. The physics of the beam deflection was studied with theoretical calculations and the deflection angle was estimated by 3D beam trajectory simulation. The evaluated deflection angle was 10 mrad in the opposite direction of the electron deflection when the maximum magnetic field on the beam axis was 480 G and the beam energy was 83.2 keV. The electrostatic lens effect on the beam deflection at the EG exit was estimated to be larger than the magnetic field effect. This deflection was reduced to 2 mrad by a 1.3 mm displacement of the grounded grid (GG) aperture, a result in agreement with experimental results of a 1/3-scale model for the LHD ion source. The maximum GG aperture displacement of the LHD ion source was designed as 3.4 mm to reduce the deflection and to focus multibeamlets using the simulation. We have developed the ion source with this design. The targeted performance is a production of H− beams of 40 A (40 mA/cm2), 180 keV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 980-982 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electron cyclotron resonance (ECR) plasma production method using electron cyclotron wave is presented. This method is not subjected to any cutoff-density scaling, and is capable of generating dense plasmas far beyond the critical density of an ordinary wave. It has been demonstrated that a plasma density more than 1013 cm−3 (argon) is obtained with a low frequency (2.45 GHz) and low power (11 kW) microwave. The experimental results and the application to plasma neutralizer are described. The experimental verification of superpermeability of Nb membrane in a plasma environment is in progress to develop a plasma neutralizer with Nb-membrane wall. The design parameters of Nb-membrane pump are presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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