Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (105)
  • 1995-1999  (230)
  • 1
    Electronic Resource
    Electronic Resource
    A new glycine substitution mutation in the COL7A1 gene in a Chinese family with dominant dystrophic epidermolysis bullosa (2003)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 28 (2003), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Dystrophic epidermolysis bullosa (DEB) is caused by mutations in the COL7A1 gene encoding type VII collagen, the major component of anchoring fibrils. The characteristic genetic lesion in dominant DEB (DDEB) is a glycine substitution in the collagenous domain of the protein. In this study, we identified a Chinese family with a four-generation pedigree of DDEB, in whom a novel glycine substitution mutation in COL7A1 was demonstrated. A heterozygous nucleotide G→A transition at position 6208 in exon 74 of COL7A1 was detected, which resulted in a glycine to arginine substitution (G2070R) in the triple-helical domain of type VII collagen. This substitution was not found in 110 unrelated normal alleles. This report emphasizes the predominance of glycine substitution mutations in DDEB and contributes to the expanding database on COL7A1 mutations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2003.01317.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    TEM observation of DO3 structure in Fe3 Al alloy with Mn addition (1999)
    Springer
    Journal of materials science 34 (1999), S. 1025-1030 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The structures of DO3 Fe-28Al-1.5Mn alloy, including ordering degree, superdislocation, APD and APB, were investigated by TEM. The results showed that addition of manganese into DO3 Fe3Al could not change the ordered type of the alloy, but could reduce APD size and then reduce ordering degree of the alloy. The fourfold superdislocations were retarded in DO3 Fe3Al alloy after Mn addition. Undeformed alloy with Mn has mainly twofold superdislocations. As deformation increases, the twofold superdislocations slip and decompose into unit dislocations, and unit dislocations slip and slip cross, leading to better ductility. The deformation mechanism of DO3 Fe-28Al-1.5Mn alloy was controlled at first by twofold superdislocation and at last by unit superdislocation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004591927568
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial NiO hillocks on truncated octahedral nanoparticles of passivated Ni (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3061-3063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial NiO hillocks on the {111} and {001} facets of truncated octahedral nanoparticles of Ni have been directly observed by high-resolution transmission electron microscopy. These nanometer hillocks form a rough shell enclosing the Ni nanoparticle. The epitaxial relationships of NiO on nanoparticles of Ni are the same as those of NiO on bulk Ni {111} and {001} surfaces. The formation of hillocks is related to the relaxation of the compressive stress in NiO arising from the very large lattice mismatch between NiO and Ni. The compressively stressed epitaxial NiO shell provides effective protection to the nanoparticles of Ni against further oxidation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1345856
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Crystallization kinetics of amorphous Sm8Fe85Si2C5 alloy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 496-499 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization kinetics of amorphous Sm8Fe85Si2C5 alloy has been investigated. As the alloy is heated to 900 °C, the crystalline phases of the alloy are composed of α-Fe phase and Sm2(Fe, Si)17Cx. At the beginning of crystallization the activation energy of the α-Fe phase is about 425 kJ/mol, it remains relatively constant as the crystallized fraction of the α-Fe phase is below 70%, and then it declines with increasing the crystallized fraction. When the crystallized fraction of the Sm2(Fe, Si)17Cx is below 50%, the activation energy of crystallization of the phase remains between 518 and 530 kJ/mol, and then decreases with the crystallized fraction. The crystallization behavior of the α-Fe phase and Sm2(Fe, Si)17Cx essentially results in the formation of an α-Fe/Sm2(Fe, Si)17Cx composite microstructure with a coarse grain size in annealed Sm8Fe85Si2C5 alloy, which is attributed to a difficult nucleation and an easy growth for both the α-Fe phase and Sm2(Fe, Si)17Cx in the alloy. Cu and Nb can be used to change the crystallization behavior of the α-Fe phase in the amorphous Sm8Fe85Si2C5 alloy, which is helpful to the formation of the α-Fe/Sm2(Fe, Si)17Cx nanocomposite microstructure with a fine grain size for the α-Fe phase in the alloy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330769
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Degradation of field emission display phosphors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 483-488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation of ZnS and Y2O2S cathodoluminescent (CL) phosphors has been studied at 1–4 keV using Auger electron spectroscopy simultaneous with CL. The data are consistent with an electron stimulated surface chemical reaction (ESSCR) which led to destruction of ZnS and formation of a surface nonluminescent ZnO layer as well as injection of oxygen point defects into the near-surface region. In the case of Y2O2S:Eu, the electron beam stimulated removal of S and formation of Y2O3:Eu in the presence of 1×10−6 Torr of oxygen. A model is presented which predicts that degradation by the ESSCR should increase with pressure in the vacuum, depend exponentially on electron dose, increase as the primary beam energy was reduced below 4 keV, and depend upon the type of gas present in the vacuum. These trends were demonstrated from the experimental data. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373683
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Thermally assisted resonant quantum tunneling of magnetization in Fe8 clusters (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5633-5635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic ac susceptibility of randomly arranged crystallites (powder sample) and well-oriented Fe8 crystallites has been measured as a function of applied magnetic field, temperature, and frequency. The Fe8 clusters, made of eight iron ions and with formula [(tacn)6Fe8O2(OH)12]8+, have a ground state S=10. From the magnetization data M(H) with the dc field, H, applied parallel and perpendicular to the easy axis of the aligned sample and χ″(T) data for different frequencies, the anisotropy field Han∼5 T and energy barrier U/kB=26.9 K were obtained. Peaks in the curves of χ′(H) were clearly observed at fields Hn=nH0, with n=0,±1 for powder sample where H0=2.4 kOe; and n=0, ±1, ±2, for an oriented sample where H0=2.2 kOe. These peaks appearing at Hn=nH0 in the curves of χ′(H) can be well described by the thermally assisted resonant quantum tunneling of magnetization. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369823
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Transient reconnection caused by the impact and switch-off of a transverse shear flow (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 2393-2400 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is supposed that local and transient reconnection in the plasma boundary layer can be caused by the impact and switch-off of a single directional transverse shear flow. MHD (magnetohydrodynamic) simulation is used to investigate the reconnection processes in the two cases. It is found that if the inflow is homogeneous, it does not cause reconnection; if the inflow is shearing flow, no matter how great the shear of the flow is, it may cause reconnection either during impacting period or after stop impacting. It is pointed out that the sudden stop of external force may be an important triggering mechanism of energy transformation and reconnection in the plasma boundary layer region. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873510
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Optical properties of nitrogenated tetrahedral amorphous carbon films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1242-1247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical composition, structural, and optical properties of nitrogenated tetrahedral amorphous carbon (ta-C:N) films deposited by a pulsed filtered vacuum arc deposition system were characterized by non-Rutherford backscattering spectroscopy, Raman spectroscopy, and ultraviolet-visible spectroscopy. It was observed that the amount of nitrogen atoms incorporated into the ta-C:N films, as well as the sp2 fraction of the films, increased with increasing nitrogen pressure PN during deposition. As a result, the optical band gap of the ta-C:N films also decreased with increasing PN. At a fixed nitrogen partial pressure of 4×10−3 Pa, the nitrogen content was found to first increase with increasing substrate negative bias voltage (−Us), up to a maximum of about 14.5 at. % at −Us of 100 and 150 V, then decreases with further increase of −Us. The sp2 fraction however increased monotonically with increasing −Us. The optical band gap of the ta-C:N films initially increased with increasing −Us, up to a maximum at a certain −Us, and then decreased with further increase in −Us. The variation of the optical band gap with the negative substrate bias voltage was discussed in terms of the different sp2-bonded carbon configurations existing in the films and the graphitization of the ta-C:N films, as indicated by the Raman and density measurement results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491275
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Direct interband transitions in tris-(8-hydroxyquinoline) aluminum thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1082-1086 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroluminescent properties of three different device structures (A:ITO/SiO2/Alq3/SiO2/Al, B:ITO/Alq3/SiO2/Al, and C:ITO/SiO2/Alq3/Al) based on the tris-(8-hydroxyquinoline) aluminum (Alq3) were investigated. A blue electroluminescence at 457 nm was obtained from device (A) and (B), and the green emission at 518 nm was obtained from device (C). It is generally agreed that the green emission originates from the recombination of the singlet excitons. The blue emission, here, is attributed to the direct transitions between the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital of Alq3. This is due to the electric field-induced excitons dissociation and the space charge accumulation at the interface. The high internal electric field enhances the dissociation of neutral singlet excitations into LUMO states and inhibits the formation of the singlet excitons, therefore enhances the probability for direct interband transitions of the relaxed carriers. The intensity of the blue emission is dependent on the operating frequency. This indicates that space charge accumulation time and effective internal electric field are responsible for the blue emission intensity. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334635
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    A simple treatment of the "scattering-in" term of the Boltzmann equation for multilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5176-5178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a simple approximation for treating anisotropic scattering within the semiclassical Boltzmann equation for current in plane geometry in magnetic multilayers. This approximation can be used to qualitatively account for the forward scattering that is neglected in the lifetime approximation, and requires only one additional parameter. For the case of a bulk material its effect is a simple renormalization of the scattering rate. The simplicity of this term has allowed quick and simple solution to the Boltzmann equation for magnetic multilayers using realistic band structures. When we use the band structures for Cu|Co multilayers obtained from first-principles calculations, we find an increase in the resistance of the multilayer, compared to the solution without the scattering-in term, due to the higher scattering rates needed to fit the same bulk conductivities. The giant-magnetoresistance ratio is also changed when the vertex corrections are included. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373286
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...