Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 3236-3238
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A theoretical description of the phase modulation state of epitaxial InGaAs layers has been recently published [D. González et al. Appl. Phys. Lett. 74, 2649 (1999)]. To verify experimentally the deduced phase diagram, InGaAs structures with In compositional steps were grown using different growth conditions. Transmission electron microscopy studies have revealed the modulation state in each layer and have allowed us to define the experimental In composition and temperature dependence of the phase transition. The results show that InGaAs layers with and without composition modulation can be obtained by changing the growth temperature. An excellent agreement with the model predictions is observed. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126592
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