Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (9)
  • 1985-1989  (10)
  • 1965-1969  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Fixed erythrodysaesthesia plaque due to intravenous injection of docetaxel (2000)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 142 (2000), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Docetaxel (Taxotere®), a semisynthetic taxoid, acts as an antimicrotubule agent and is considered to have great potential in the treatment of non-small cell lung cancer, advanced breast cancer, ovarian cancer and some other tumours. Well-recognized side-effects include dose-limiting neutropenia, fluid retention, myalgia, neuropathy, hypersensitivity reaction, alopecia, mucositis, nail changes and cutaneous reactions such as acral erythema. We describe a unique docetaxel-induced cutaneous reaction presenting as fixed erythematous plaque(s) unrelated to extravasation or previous skin injury; histopathological studies were performed in three of the four cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2000.03432.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence from the two-dimensional electron gas at GaAs/AlGaAs single heterojunctions (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 285-287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied photoluminescence from GaAs/Al0.3Ga0.7 As modulation-doped single heterojunctions, using excitation sources from infrared to ultraviolet near-liquid-helium temperature. The spectra have a strong interface component, accompanied by bulk GaAs and AlGaAs band-gap luminescence. Using ultraviolet instead of infrared as the excitation, the interface signal is greatly enhanced relative to the bulk GaAs luminescence. The interface signal can be shifted to the higher energies when a semitransparent front gate is positively biased. Our observations indicate that the interface luminescence comes from the recombination of the two-dimensional electrons with holes trapped at or near the interface. The peaks and the shoulders in the interface spectra appear to correspond to subbands of the two-dimensional electron gas at the interface. Our results demonstrate the feasibility of doing spectroscopic studies on high-mobility electrons at single heterojunctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99915
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    New field-effect resonant tunneling transistor: Observation of oscillatory transconductance (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2742-2744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present device characteristics of a field-effect, unipolar, resonant tunneling transistor. An oscillatory tunneling current in the transfer characteristics is observed for the first time. Our observation confirms a recent hypothesis that a mere three-to-two dimensional resonant tunneling can occur when scattering rate is less than the attempt frequency of tunneling electrons in the quantum well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101940
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Implant and annealed ohmic contact to a thin quantum well (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1650-1652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate for the first time that ion implantation and implant activation annealing, combined with a heavily doped InGaAs surface layer, can be used to make nonalloying shallow ohmic contact to an n-type InGaAs (or GaAs) quantum well. Quantum Hall effect and Shubnikov–de Haas oscillations are clearly observed, which indicates that electrons in the quantum well remain two dimensional despite the post-implantation high-temperature annealing. This technique can be applied to devices that would need to make shallow ohmic contact to a thin (∼100 A(ring) or less) quantum well, where existing selective etching approaches fail to work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102227
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Interface properties of HgCdTe metal-insulator-semiconductor capacitors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 265-267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductance method has been used to measure the density of interface states of the ZnS/Hg0.775Cd0.225Te metal-insulator-semiconductor (MIS) system with three different HgCdTe surface treatments. It is found that the density of fast interface states increases from ∼1011 eV−1 cm−2 at the conduction-band minimum to ∼1013 eV−1 cm−2 near the valence-band maximum. In addition, the interface states located in the lower part of the band gap communicate with the valence band so efficiently that the effective band gap is reduced. Our observations explain why the p-type MIS photodiode is superior to the n-type version in terms of breakdown voltage and storage time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100985
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Nanometer-size InAs/AlSb quantum wires: Fabrication and characterization of Aharonov–Bohm quantum rings (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5272-5276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a fabrication method for laterally confining the two-dimensional electrons in InAs/AlSb single quantum wells into artificially patterned conducting wires. The minimum wire width is demonstrated to be ∼30 nm, among the smallest reported to date. The confining potential is approximately square and abrupt, and that makes the electron's spatial distribution in the transverse direction the same as the physical width of the wire. The conducting electrons have close proximity to the surface charges, thus there is always a reduction in the elastic mean free path when the wire width decreases. Despite the reduction in mean free path, we find that the phase coherence length is approximately 1 μm at 2.2 K, a factor of 30 larger than the minimum feature size. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316053
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Adhesion and deformation of metal/polyimide layered structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1911-1917 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion and interfacial failure of Cr, Cu, and Cu/Cr films on a thin pyromellitic dianhydride-oxydianiline polyimide substrate have been investigated using a recently developed stretch deformation technique. This method directly measures the energy required to separate the interface from the difference in the load versus elongation curves between film/substrate and substrate structures. The failure mode was observed in combination with morphological studies by in situ optical microscopy and scanning and transmission electron microscopies. The stress distribution in the sample upon stretching has been computed by a finite element analysis. The difference in the stress relief modes, film fracture, and delamination behavior for Cu versus Cr films is discussed. The important role of crack formation in the metal overlayer for initiating failure is demonstrated. The effects due to the addition of a brittle Cr interface layer between polyimide and Cu on the buildup of stress and the onset of failure have also been investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342903
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Stress relaxation during thermal cycling in metal/polyimide layered films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6690-6698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stress relaxation behavior during thermal cycling of metal/quartz and metal/polyimide/quartz layered structures has been investigated using a cantilever bending beam technique. The metals chosen for this study include Cu and Cr, two materials with contrasting mechanical and interfacial bonding properties. A finite element analysis, as well as an analytical calculation, has been carried out to deduce the stress distribution in the layered structures. Results indicate that the extent of stress relaxation strongly depends on the intrinsic mechanical property of the metal film with significantly higher stresses residing in the Cr film than in the Cu film. The interfacial polyimide layer has been found to serve as an effective buffering layer to reduce the residual stress in metal films. Observations from transmission electron microscopy suggest that the stress is partially released through the deformation of the polyimide near the metal/polyimide interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341999
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Nanometer-scale quantum channels defined by reactive ion etching in InAs/AlSb heterojunctions (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2861-2863 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approach to the lateral confinement of electrons in an InAs quantum well has been developed. Conducting quantum wires, rings, and dots with lateral dimension ≥50 nm have been fabricated by using electron-beam lithography and reactive ion etching. Due to the Fermi level pinning at InAs surface, the lateral confinement is abrupt and approximately square. Magnetotransport characterization on a series of fabricated hallbars demonstrate that, despite damage by energetic ions, the electron transport in these quantum wires is in the quasiballistic regime at 4.2 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320867
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    On the Unification of the Thermal and Chain Theories of Explosion Limits (1965)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 69 (1965), S. 2747-2750 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100892a044
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...