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  • 2000-2004  (9)
  • 1985-1989  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Hole-scattering mechanisms in modulation-doped heterostructures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3577-3579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole mobilities in the two highest spin-split subbands in a p-type modulation-doped heterostructure are calculated. The light-hole mobility is shown to be very low because of efficient scattering by the holes in the heavy mass subband. This finding significantly simplifies calculation of the charge transport, since only the heavy-hole contribution has to be considered. It is shown that for the state-of-the-art heterostructures the heavy-hole mobility is limited by the deformation potential acoustical and optical phonon scatterings with small contribution from ionized impurities at low temperatures. The valence-band deformation potential constant has been determined comparing the theoretical calculations with available experimental data on temperature dependence of the hole mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336782
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of diluted III–V nitride thin films by N ion implantation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2227-2234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diluted III–Nx–V1−x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nx–V1−x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaNxAs1−x and InNxP1−x alloys. In GaNxAs1−x the highest value of x (fraction of "active" substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNxP1−x was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implanted InNxP1−x was at least a factor of 2 higher than that in GaNxAs1−x under similar processing conditions. AlyGa1−yNxAs1−x had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNxAs1−x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y〉0.44) where the band gap of the host material is indirect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388860
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3144-3147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that defect inhomogeneities of sizes larger than the electron mean free path are responsible for the low values and anomalous temperature dependence of the electron mobility in semi-insulating (SI) GaAs. The room-temperature electron mobility values below about 6000 cm2/V s cannot be uniquely used for the determination of the concentration of ionized defects, since the contribution from inhomogeneities usually exceeds that from scattering by ionized impurities. The effects of the macroscopically inhomogeneous distribution of residual acceptors and the major deep donor EL2 diminish at elevated temperatures between 600 and 900 K, which offers a means for identification of inhomogeneities, and furthermore explains recently reported steplike mobility versus temperature behavior in SI-GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336893
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  • 4
    Electronic Resource
    Electronic Resource
    Amphoteric native defects in semiconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2094-2096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that a new concept of amphoteric native defects with strongly Fermi level dependent defect formation energy provides the basis for a unified explanation of a large variety of phenomena in semiconductors. Formation of Schottky barriers, particle irradiation induced compensation, doping-induced superlattice intermixing, and limits of free-carrier concentration find for the first time a common simple explanation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101174
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Dislocation density reduction by isoelectronic impurities in semiconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2009-2011 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism for dislocation density reduction by isoelectronic doping is proposed. It is shown that the strain introduced by randomly distributed dopants lowers the vacancy supersaturation impeding dislocation formation via vacancy condensation. Trends in dislocation reduction through codoping with isoelectronic and electrically active impurities are discussed for the case of GaAs doped with indium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101198
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  • 6
    Electronic Resource
    Electronic Resource
    Pressure dependence of Schottky barrier height at the Pt/GaAs interface (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 974-976 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height at the Pt/GaAs interface has been measured as a function of pressure using a diamond anvil cell. The Schottky barrier height was found to shift to higher energy with a linear pressure coefficient of 11 meV/kbar, which is equal to the pressure coefficient of the fundamental gap of GaAs and with a nonlinear coefficient of −0.26 meV/kbar2. These results are discussed in terms of defect models which have been proposed to explain the Fermi level pinning in Schottky barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100045
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of interface reactions on electrical characteristics of metal-GaAs contacts (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 189-191 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid-state interface reactions between metal thin films and (100) GaAs substrates at elevated temperatures are studied by conventional and heavy-ion Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy. Metals investigated in this study include Pt, Pd, Ni, Co, Rh, and W. Electrical properties of the metal/n-GaAs diodes undergoing annealing treatments at various temperatures were also measured with the current-voltage dependence. Optimum diodes with maximum barrier heights as well as minimum leakage currents are obtained for diodes annealed at temperatures at which a uniform thin layer of reacted phase is observable at the interface. The barrier heights of the optimum diodes show a linear dependence on the work functions of the various metals. The range of these barrier heights is limited by nonstoichiometry related defects as suggested by a recently proposed amphoteric native defect model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98918
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  • 8
    Electronic Resource
    Electronic Resource
    Band anticrossing in group II-Ox–VI1−x highly mismatched alloys: Cd1−xMnyOxTe1−x quaternaries synthesized by O ion implantation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1571-1573 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly mismatched group II-Ox–VI1−x alloys have been synthesized by oxygen implantation into Cd1−yMnyTe crystals. In crystals with y〉0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd0.38Mn0.62Te. This striking behavior is consistent with the band anticrossing model which predicts that repulsive interaction between localized states of O and the extended states of the conduction band causes the band gap reduction. These large, O-induced effects provide a unique opportunity by which to control the optical and electronic properties in II–VI alloys. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455689
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of microstructure on electrical properties of diluted GaNxAs1−x formed by nitrogen implantation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 931-933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that these voids are responsible for the low activation efficiency of N implanted into GaAs. The results show that the N-induced enhancement of the donor activation efficiency can be achieved only in a void-free region of the implanted sample. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390487
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  • 10
    Electronic Resource
    Electronic Resource
    Synthesis of InNxP1−x thin films by N ion implantation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dilute InNxP1−x alloy thin films were synthesized by nitrogen ion implantation into InP using doses corresponding to N mole fraction up to 0.048. In the films with the highest N contents, it was shown using modulated photoreflectance that the fundamental band gap energy was decreased by up to 180 meV. The band gap reduction is similar in magnitude to that observed in epitaxially grown III–NxV1−x alloys. The InNxP1−x layers were thermally stable up to an annealing temperature of 850 °C. Using the recently developed band anticrossing model which relates the band gap reduction to the N content, we estimate that the maximum mole fraction of N achieved in the InNxP1−x alloys is larger than that reported previously for film grown by chemical vapor deposition and exceeds 0.01. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350963
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