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  • 1
    Electronic Resource
    Electronic Resource
    Formation of diluted III–V nitride thin films by N ion implantation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2227-2234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diluted III–Nx–V1−x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nx–V1−x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaNxAs1−x and InNxP1−x alloys. In GaNxAs1−x the highest value of x (fraction of "active" substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNxP1−x was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implanted InNxP1−x was at least a factor of 2 higher than that in GaNxAs1−x under similar processing conditions. AlyGa1−yNxAs1−x had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNxAs1−x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y〉0.44) where the band gap of the host material is indirect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388860
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of free hole concentration in ferromagnetic Ga1−xMnxAs using electrochemical capacitance–voltage profiling (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 844-846 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that electrochemical capacitance–voltage profiling can be used to determine the free hole concentration in heavily p-type doped low-temperature-grown GaAs films. This provides a simple and reliable method for measuring the hole concentration in ferromagnetic Ga1−xMnxAs semiconductor alloys. The method overcomes the complications that arise from the anomalous Hall effect term which affects standard transport studies of carrier concentration in conducting ferromagnetic materials. Specifically, we find that the maximum Curie temperature of about 111 K found for our Ga0.91Mn0.09As samples corresponds to a hole concentration of 1021 cm−3. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496143
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  • 3
    Electronic Resource
    Electronic Resource
    Direct measurement of CAs in group III+C coimplanted GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3829-3834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of In and Ga coimplanted with C into GaAs on the concentration of CAs has been investigated by local vibrational mode spectroscopy, Rutherford backscattering, particle-induced x-ray emission, and Hall effect. The dose of the C was fixed at 5×1014 cm−2, 27 keV, while the doses of either In, 185 keV, or Ga, 160 keV, ranged from 5×1013 to 5×1015 cm−2. Based on the Hall-effect and local vibrational mode data, 99% of the C, when implanted alone and annealed, is not located as isolated, substitutional atoms on either sublattice, but in an inactive complex. The coimplanted group-III species acts to increase both the concentration of CAs ([CAs]) and the sheet hole concentration. For coimplant doses of 5×1013 and 5×1014 cm−2, these values are in good agreement. Increasing the dose of the group-III coimplanted ion to 5×1015 cm−2 results in a hole concentration that is 45% less than the [CAs] and the coimplanted ions begin to occupy nonsubstitutional sites. The reduction in the concentration of holes due to CAs at the highest dose of coimplanted ion appears to be caused by a compensating defect which limits the maximum sheet hole concentration obtainable by the coimplantation technique in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356061
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  • 4
    Electronic Resource
    Electronic Resource
    Ion-implanted charge collection contacts for high purity silicon detectors operated at 20 mK (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2625-2630 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a technique for fabricating high resolution, ohmic contacts for cryogenic silicon detectors operated at temperatures well below 1 K. In this paper, we give a detailed description of the techniques used to fabricate these boron-implanted contacts, and present characterization data obtained on 24 test samples studied during the design phase of our program. We then describe the fabrication and operation of a 23 g prototype silicon hybrid detector which simultaneously senses both the phonons and ionization produced by a single event, and which incorporates these new contacts into its design. Finally, we present data obtained using a radioactive source of 241Am and this detector operated at 20 mK, and conclude that the contacts are fully sufficient for applications in particle astrophysics as well as in many other areas of physics. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145599
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  • 5
    Electronic Resource
    Electronic Resource
    Dependence of the fundamental band gap of AlxGa1−xN on alloy composition and pressure (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8505-8507 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption studies were performed to investigate the dependence of the fundamental band gap of AlxGa1−xN epitaxial films on Al content and applied hydrostatic pressure. The results of absorption measurements performed at atmospheric pressure yielded the variation of the band-gap energy E(x)=3.43+1.44x+1.33x2 eV for the AlxGa1−xN system. Optical absorption edge associated with the direct Γ band gap shifts linearly towards higher energy under applied pressure. By examining the pressure dependence of the absorption edge in samples with different AlN mole fractions and taking into account the difference of compressibility between the epitaxial films and sapphire substrate, the pressure coefficients for the direct Γ band gaps of AlxGa1−xN were determined. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370696
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  • 6
    Electronic Resource
    Electronic Resource
    A comparative study of phase stability and film morphology in thin-film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2070-2079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M=Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir3Ga5. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are explained by considering the effects of bond strength and the relative diffusivities of the reacting species. The role of film thickness in determining the final phases and the phase distribution is also considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339553
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of microstructure on electrical properties of diluted GaNxAs1−x formed by nitrogen implantation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 931-933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that these voids are responsible for the low activation efficiency of N implanted into GaAs. The results show that the N-induced enhancement of the donor activation efficiency can be achieved only in a void-free region of the implanted sample. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390487
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  • 8
    Electronic Resource
    Electronic Resource
    Reduction of threading dislocation density in GaN using an intermediate temperature interlayer (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3562-3564 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN thin films with a reduced threading dislocation density have been produced by organometallic vapor phase epitaxy using an intermediate temperature interlayer. A description of the growth process is presented with characterization results. Reduction of the dislocation density was obtained by insertion of a single thin interlayer grown at an intermediate temperature after the initial growth at high temperature. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend in the interlayer and do not propagate in the top layer grown at higher temperature in a lateral growth mode. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329635
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  • 9
    Electronic Resource
    Electronic Resource
    Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3607-3609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large increase in the electrical activation of sulfur coimplanted with nitrogen in GaAs is observed within a thin (〈500 Å) near-surface region. A free electron concentration as high as 1.5×1019 cm−3 is observed in this layer, which is a factor of 5 higher than in a GaAs sample implanted with S only. The high free electron concentration in this thin layer is the result of the incorporation of N on the As site which forms a thin dilute GaNxAs1−x alloy layer. The increased electrical activity of S in this layer is explained by the N-induced modifications of the conduction band as predicted by the band anticrossing model. The measured free electron concentration is consistent with a GaNxAs1−x alloy layer with x∼0.3%. The results have important practical implications on the fabrication of low-resistance, nonalloyed ohmic contacts to n-type GaAs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328766
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  • 10
    Electronic Resource
    Electronic Resource
    Nature of the fundamental band gap in GaNxP1−x alloys (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3251-3253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of GaNxP1−x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaNxP1−x at energy below the indirect ΓV–XC transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaNxP1−x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126597
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