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  • 2000-2004  (1)
  • 1985-1989  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogenation of molecular beam epitaxial Ge0.36Si0.64 on Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 684-686 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Passivation of threading dislocations in an incommensurate Ge0.36Si0.64/Si structure is studied using hydrogen plasma anneal. The reverse current of pn junction diodes made of the above structure is reduced by more than 30 times after hydrogenation. Associated improvements in the current-voltage (I-V) characteristics is also observed. Capacitance-voltage (C-V) measurements reveal that the shallow dopants neutralized by hydrogenation reactivate at lower temperatures than the passivated deep level defects. Secondary-ion mass spectroscopy (SIMS) analysis established the depth of diffusion of hydrogen under the experimental conditions. Work in this direction could eventually lead to the integration of infrared detectors with Si very large scale integration (VLSI).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101821
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of the wetting-layer growth kinetics on the size and shape of Ge self-assembled quantum dots on Si(001) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 263-265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth temperature of the wetting layer is used as the key variable in the study of a series of Ge self-assembled quantum dots on Si(001) substrates. A relaxed SiGe buffer layer is used for most of the samples as a means of maintaining the density of Ge dots. Ge dots are in the shapes of pyramids, domes, and superdomes, similar to those reported in the literature. A significant difference in the fraction of pyramids is observed between samples with wetting layers grown at low (280 °C) and high (650 °C) temperatures. This difference is in turn dependent on the total amount of Ge deposited or equivalently, the average size of dots. These observations point to the presence of Si during the initial stage of Ge dot formation and that the fraction of pyramids as well as the critical size for the transition from pyramids to domes are influenced by the presence of Si. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383274
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    Paper (German National Licenses)
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