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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5221-5224 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic structure calculations predict Ag3AuTe2 to be a small-band-gap semiconductor. Polycrystalline samples of the pure and doped materials have been synthesized, and the physical properties are reported. Thermoelectric power measurements indicate that pure Ag3AuTe2 is a p-type material with a very large room-temperature Seebeck coefficient of 530 μV/K. The thermal conductivity is very low, and at room temperature, is lower than that of the best thermoelectrics. The transport properties were found to be very sensitive to chemical doping and nonstoichiometry. Although samples made with excess Ag resulted in improved thermoelectric performance at higher temperatures (〉500 K), the large resistivity of these materials makes them noncompetitive with state-of-the-art thermoelectrics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 317-321 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoelectric properties of the pure and doped half-Heusler compounds FeVSb and FeNbSb are reported. The electrical resistivities are between 0.2 and 20 mΩ cm at room temperature. Thermoelectric power measurements indicate that FeVSb is an n-type material with moderate Seebeck coefficients near −70 μV/K at 300 K. The thermal conductivity at room temperature is large, approximately 0.1 W/cm K, and increases with decreasing temperature. Chemical substitutions, which have a dramatic effect on the transport properties, were performed in an effort to enhance the thermoelectric performance. Band-structure calculations are presented for the pure materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 766-769 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a modern plasma etching device, the plasma sheath potential is usually superposed by an externally driven oscillating voltage to enhance and control the bombarding ion energy. A collisionless particle simulation is used to study the variation of average kinetic energy 〈K〉(νrf) of bombarding ions as a function of a wide range of sheath oscillation frequency νrf (0.1νpi≤νrf≤10νpi, where νpi is the ion plasma frequency). It is found that a resonance phenomenon between the ion transit motion and the sheath oscillation can yield a strongly peaked enhancement of 〈K〉(νrf) near νrf(similar, equals)0.5νpi. Ion species with different mass show the peaks at different νrf. The relative importance of different ion molecules in an ion-enhanced etching process will be sensitive to νrf. This phenomenon may allow a reduction of the undesirable capacitive coupling by optimizing νrf to yield an enhanced 〈K〉 of desired ion species at low applied voltages. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1464-1471 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline thin films of Zn2SnO4 were deposited by rf magnetron sputtering onto glass substrates. Films were characterized by θ–2θ x-ray diffraction and by 119Sn conversion electron Mössbauer spectroscopy. The films were randomly oriented in a cubic spinel structure. Comparison of x-ray diffraction peak intensities with structure-factor-calculated peak intensities confirmed that the films were in an inverse spinel configuration. Mössbauer studies detected two distinct Sn4+ octahedral sites. These distinct sites may be induced by distortions in the lattice associated with equally distinct Zn2+ octahedral sites. A model is suggested to explain that the relatively low electron mobility of Zn2SnO4 may be associated with disorder on the cation octahedral sites. This may disrupt transport between edge-sharing d10s0 electronically configured cations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 462-466 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel machine has been developed to measure transport coefficients in the temperature range of 50–350 K of thin films deposited on electrically insulating substrates. The measured coefficients—resistivity, Hall, Seebeck, and Nernst—are applied to solutions of the Boltzmann transport equation to give information about the film's density-of-states effective mass, the Fermi energy level, and an energy-dependent scattering parameter. The machine is designed to eliminate or compensate for simultaneously occurring transport phenomena that would interfere with the desired measured quantity, while allowing for all four coefficients to be measured on the same sample. An average density-of-states effective mass value of 0.29±0.04me was measured on the transparent conductive oxide, cadmium stannate (CTO), over a carrier concentration range of 2–7×1020 cm−3. This effective mass value matched previous results obtained by optical and thermoelectric modeling. The measured scattering parameter indicates that neutral impurities or a mixture of scattering mechanisms may inhibit the transport of carriers in CTO. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 196-198 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wideband scanning of a light beam through the use of magnetostatic waves has been accomplished for the first time. Specifically, a guided-light beam at a wavelength of 1.317 μm in an yttrium iron garnet-gadolinium gallium garnet waveguide was Bragg diffracted by magnetostatic forward volume waves (MSFVWs) operating at a frequency range of 2–7 GHz. Wideband scanning of the light beam was accomplished simply by changing the frequency of the MSFVW continuously from center frequencies of 2.5 and 6.0 GHz while keeping the dc magnetic field fixed or by continuously tuning the dc magnetic field while keeping the frequency of the MSFVW fixed at the center frequencies. A large number of resolvable scan spot positions were obtained in both cases. The resulting wideband magneto-optic Bragg cell or light beam scanner was also used to perform spectral analysis of wideband rf signals at a center frequency of 3.2 GHz. Potential advantages of the magneto-optic Bragg cell and scanner over the existing acousto-optic counterparts also identified.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2023-2024 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use picosecond optics techniques to generate and detect acoustic pulses in an epitaxially grown film of AlAs. From the round trip time of the acoustic pulse we find a sound velocity in the [100] direction of 6.4×105 cm s−1. We also show how measurements of this type can be used to determine the refractive index.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1696-1698 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very large bandwidth noncollinear coplanar magneto-optic interaction with magnetostatic forward volume waves in an yttrium iron garnet-gadolinium gallium garnet (YIG-GGG) waveguide is reported for the first time. Bandwidths of 0.78 and 1.03 GHz centered, respectively, at the carrier frequencies of 2.5 and 6.0 GHz, and TM0 -TE0 mode-conversion efficiencies of 0.54 and 0.50% have been achieved at the optical wavelength of 1.317 μm using a single microstrip transducer and homogeneous dc magnetic fields of 2200 and 3500 Oe. A summary of related coupled-mode analysis is also presented.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2271-2273 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Waveguide lenses have been formed for the first time in yttrium iron garnet-gadolinium gallium garnet (YIG-GGG) waveguides by using ion milling. Hybrid-type single lenses, lens arrays, and collimation-Fourier-transform lens pairs fabricated have shown good efficiency and near-diffraction-limited focal spot sizes. These waveguide lenses should facilitate realization of magnetostatic wave based integrated magneto-optic device modules for applications in communications and signal processing.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2242-2244 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Guided-wave magneto-optic Bragg cells at X-band microwave frequencies using magnetostatic forward volume waves (MSFVWs) in bismuth-doped yttrium iron garnet-gadolinium gallium garnet (Bi-doped YIG-GGG) waveguides are reported for the first time. Performance figures that have been obtained at an optical wavelength of 1.303 μm include a center frequency tuning range of 3.7–12.0 GHz, a diffraction efficiency of 12% at the magnetostatic wave power of 56 mW, a linear dynamic range 〉40 dB, and a −3 dB magneto-optic bandwidth of 150 MHz. These results represent a significant improvement over those obtained previously with the Bragg cells using pure YIG-GGG waveguides. Maximum scan angle of 6° and 5.3° were also measured, respectively, by tuning the rf frequency ∼10.0 GHz at a fixed dc magnetic field of 3660 Oe and by varying the dc magnetic field ∼3660 Oe at a fixed rf frequency of 10.0 GHz. A frequency resolution of 30 MHz was measured with rf spectral analysis experiments carried out at 12 GHz. Finally, a Faraday rotation coefficient as large as −2313°/cm was measured for the Bi-doped YIG-GGG waveguides.
    Type of Medium: Electronic Resource
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