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  • 1
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Dystrophic epidermolysis bullosa (DEB) is caused by mutations in the COL7A1 gene encoding type VII collagen, the major component of anchoring fibrils. The characteristic genetic lesion in dominant DEB (DDEB) is a glycine substitution in the collagenous domain of the protein. In this study, we identified a Chinese family with a four-generation pedigree of DDEB, in whom a novel glycine substitution mutation in COL7A1 was demonstrated. A heterozygous nucleotide G→A transition at position 6208 in exon 74 of COL7A1 was detected, which resulted in a glycine to arginine substitution (G2070R) in the triple-helical domain of type VII collagen. This substitution was not found in 110 unrelated normal alleles. This report emphasizes the predominance of glycine substitution mutations in DDEB and contributes to the expanding database on COL7A1 mutations.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3061-3063 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial NiO hillocks on the {111} and {001} facets of truncated octahedral nanoparticles of Ni have been directly observed by high-resolution transmission electron microscopy. These nanometer hillocks form a rough shell enclosing the Ni nanoparticle. The epitaxial relationships of NiO on nanoparticles of Ni are the same as those of NiO on bulk Ni {111} and {001} surfaces. The formation of hillocks is related to the relaxation of the compressive stress in NiO arising from the very large lattice mismatch between NiO and Ni. The compressively stressed epitaxial NiO shell provides effective protection to the nanoparticles of Ni against further oxidation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 496-499 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization kinetics of amorphous Sm8Fe85Si2C5 alloy has been investigated. As the alloy is heated to 900 °C, the crystalline phases of the alloy are composed of α-Fe phase and Sm2(Fe, Si)17Cx. At the beginning of crystallization the activation energy of the α-Fe phase is about 425 kJ/mol, it remains relatively constant as the crystallized fraction of the α-Fe phase is below 70%, and then it declines with increasing the crystallized fraction. When the crystallized fraction of the Sm2(Fe, Si)17Cx is below 50%, the activation energy of crystallization of the phase remains between 518 and 530 kJ/mol, and then decreases with the crystallized fraction. The crystallization behavior of the α-Fe phase and Sm2(Fe, Si)17Cx essentially results in the formation of an α-Fe/Sm2(Fe, Si)17Cx composite microstructure with a coarse grain size in annealed Sm8Fe85Si2C5 alloy, which is attributed to a difficult nucleation and an easy growth for both the α-Fe phase and Sm2(Fe, Si)17Cx in the alloy. Cu and Nb can be used to change the crystallization behavior of the α-Fe phase in the amorphous Sm8Fe85Si2C5 alloy, which is helpful to the formation of the α-Fe/Sm2(Fe, Si)17Cx nanocomposite microstructure with a fine grain size for the α-Fe phase in the alloy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 483-488 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation of ZnS and Y2O2S cathodoluminescent (CL) phosphors has been studied at 1–4 keV using Auger electron spectroscopy simultaneous with CL. The data are consistent with an electron stimulated surface chemical reaction (ESSCR) which led to destruction of ZnS and formation of a surface nonluminescent ZnO layer as well as injection of oxygen point defects into the near-surface region. In the case of Y2O2S:Eu, the electron beam stimulated removal of S and formation of Y2O3:Eu in the presence of 1×10−6 Torr of oxygen. A model is presented which predicts that degradation by the ESSCR should increase with pressure in the vacuum, depend exponentially on electron dose, increase as the primary beam energy was reduced below 4 keV, and depend upon the type of gas present in the vacuum. These trends were demonstrated from the experimental data. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1242-1247 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical composition, structural, and optical properties of nitrogenated tetrahedral amorphous carbon (ta-C:N) films deposited by a pulsed filtered vacuum arc deposition system were characterized by non-Rutherford backscattering spectroscopy, Raman spectroscopy, and ultraviolet-visible spectroscopy. It was observed that the amount of nitrogen atoms incorporated into the ta-C:N films, as well as the sp2 fraction of the films, increased with increasing nitrogen pressure PN during deposition. As a result, the optical band gap of the ta-C:N films also decreased with increasing PN. At a fixed nitrogen partial pressure of 4×10−3 Pa, the nitrogen content was found to first increase with increasing substrate negative bias voltage (−Us), up to a maximum of about 14.5 at. % at −Us of 100 and 150 V, then decreases with further increase of −Us. The sp2 fraction however increased monotonically with increasing −Us. The optical band gap of the ta-C:N films initially increased with increasing −Us, up to a maximum at a certain −Us, and then decreased with further increase in −Us. The variation of the optical band gap with the negative substrate bias voltage was discussed in terms of the different sp2-bonded carbon configurations existing in the films and the graphitization of the ta-C:N films, as indicated by the Raman and density measurement results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1082-1086 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroluminescent properties of three different device structures (A:ITO/SiO2/Alq3/SiO2/Al, B:ITO/Alq3/SiO2/Al, and C:ITO/SiO2/Alq3/Al) based on the tris-(8-hydroxyquinoline) aluminum (Alq3) were investigated. A blue electroluminescence at 457 nm was obtained from device (A) and (B), and the green emission at 518 nm was obtained from device (C). It is generally agreed that the green emission originates from the recombination of the singlet excitons. The blue emission, here, is attributed to the direct transitions between the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital of Alq3. This is due to the electric field-induced excitons dissociation and the space charge accumulation at the interface. The high internal electric field enhances the dissociation of neutral singlet excitations into LUMO states and inhibits the formation of the singlet excitons, therefore enhances the probability for direct interband transitions of the relaxed carriers. The intensity of the blue emission is dependent on the operating frequency. This indicates that space charge accumulation time and effective internal electric field are responsible for the blue emission intensity. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5176-5178 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a simple approximation for treating anisotropic scattering within the semiclassical Boltzmann equation for current in plane geometry in magnetic multilayers. This approximation can be used to qualitatively account for the forward scattering that is neglected in the lifetime approximation, and requires only one additional parameter. For the case of a bulk material its effect is a simple renormalization of the scattering rate. The simplicity of this term has allowed quick and simple solution to the Boltzmann equation for magnetic multilayers using realistic band structures. When we use the band structures for Cu|Co multilayers obtained from first-principles calculations, we find an increase in the resistance of the multilayer, compared to the solution without the scattering-in term, due to the higher scattering rates needed to fit the same bulk conductivities. The giant-magnetoresistance ratio is also changed when the vertex corrections are included. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4917-4921 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed outgoing resonant Raman scattering and photoluminescence measurements on as-grown, Be- and C-implanted GaN in the temperature range of 77–330 K. In implanted GaN after postimplantation annealing at 1100 °C, the A1(LO) multiphonons up to the seventh order were observed with the very strong four longitudinal optical (LO) and five LO modes at ∼2955 and ∼3690 cm−1, respectively, showing extraordinary resonance behavior. With the sample temperature, these two modes significantly decreased and increased in intensity, respectively. The phenomenon is attributed to the variation of resonant conditions due to the shift of the band gap energy. Meanwhile, the combination of E2(high) and quasi-LO phonons was strongly enhanced by quasi-LO phonon involvement and thus the corresponding overtones can be clearly observed even up to the sixth order (m=6). The mechanisms that such strong outgoing multiphonon resonance Raman scattering occurred to implanted GaN instead of high-quality as-grown GaN samples can be attributed to the strong Frohlich-induced scattering by LO phonons and exciton-mediated resonant Raman scattering with impurity inducement. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3912-3917 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the patterned heteroepitaxial processing (PHP) approach for the removal of threading dislocations (TDs) from ZnSe and ZnS0.02Se0.98 on GaAs (001). PHP involves the growth of a continuous heteroepitaxial layer followed by postgrowth patterning and annealing. We found that the basic mechanism of TD removal by PHP is thermally activated dislocation motion in the presence of sidewalls. By studying the temperature dependence we showed that the activation energy for the annealing process (∼0.7 eV in ZnSe on GaAs) is consistent with dislocation motion by glide. We showed that there is a minimum mesa thickness required for the complete removal of TDs by PHP (∼3000 Å for 70 μm×70 μm mesas of ZnSe on GaAs). This is because the lateral forces acting on TDs are proportional to the mesa thickness. We also conducted a preliminary study of the mismatch dependence of PHP. Our results suggest that PHP removes TDs more effectively in the higher lattice mismatch system ZnSe/GaAs (001) than in the lower lattice mismatch system ZnS0.02Se0.98/GaAs (001). This is expected based on the mismatch dependence of the line tension forces in the misfit segments of dislocations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1062-1064 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monoclinic Ga2O3 nanobelts and nanosheets are obtained by a simple chemical route involved with H2O at 950 °C in Ar atmosphere. Electron microscopy observations reveal that the as-synthesized Ga2O3 nanobelts and nanosheets are structurally uniform, single crystalline, and most of them are free of defects and dislocations. The nanobelts are growing along with [001] facets, and the nanosheets are stacked up by (011) facets. The Raman scattering spectrum of Ga2O3 nanostructures shows a 30 cm−1 redshift at high wave numbers in comparison with that of bulk Ga2O3 powder. The photoluminescence spectrum reveals that there exists a stable blue emission band centered at 460 nm, which is mainly attributed to the oxygen vacancies in the Ga2O3 nanostructures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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