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  • 2000-2004  (4)
  • 1975-1979  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Growth of strained-layer GaAs/Ge superlattices by magnetron sputtering: Optical and structural characterization (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3209-3214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained layer superlattices of GaAs/Ge/GaAs and Ge/GaAs/Ge have been grown by magnetron sputtering of different intercalated layer thickness. The samples exhibited good crystallographic quality, pseudomorphic growth on the substrate, as well as superlattice characteristics. Layer periodicity, concentration profile and the thicknesses of the resultant films were examined by high-resolution x-ray diffraction, secondary ion mass spectroscopy, infrared (IR) optical transmission measurements, and Raman spectroscopy. The heterostructures exhibited IR attenuation peaks in transmission between 0.5 and 1.0 eV, whose energy position was characterized as a function of the thickness of the intercalated thinner layers. The combined results of these techniques reveal that the intended GaAs layers are in fact composed of (GaAs)1−x(Ge2)x alloys with a few percent Ge content. Experimental and theoretical results have been modeled with the transmittance model, which assumes that light hits the surface normally and takes the alternating layer thicknesses as variable parameters. Both, experimental and theoretical results agree to within 3%. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347413
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Dependence on the atmosphere of preparation of the luminescence of spark processed porous GaAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1270-1275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the preparation of photoluminescent porous GaAs by the application of high voltage spark discharges in atmospheres of pure oxygen, pure nitrogen, and in mixed N2:O2 ratios of 4:1 and 1:4. The spark-processed porous (spp) samples were characterized by the observation of their visible photoluminescence (PL) when illuminated with UV monochromatic radiation. Some differences are observed in the initial PL spectra of the spp-GaAs according to the atmosphere of preparation under similar sparking and time conditions. The PL consists of two dominant bands, a yellow-green band between ∼2.2 and 2.6 eV and a blue-violet band, centered at 3.1 eV. Comparison with Raman and PL results from As2O3 and As2O5 indicates that the PL in the spp-GaAs is produced by the formation of these compounds by exposure to oxygen during the preparation. This is reinforced by energy dispersive x-ray spectroscopy measurements that indicate that the spp-GaAs is always oxidized, even when prepared under a nitrogen flow. The blue-UV emission at 3.1 eV suggests that we cannot rule out confinement as a contributing mechanism for this PL. Raman spectra indicate that for samples prepared in pure nitrogen, the resulting material consists of amorphous As and GaAs, and the cubic form of As2O3, arsenolite. PL and Raman indicate that there exists an increasing degree of amorphization of the resultant material with the introduction of nitrogen in the preparation atmosphere. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372007
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  • 3
    Electronic Resource
    Electronic Resource
    Raman scattering study of (GaAs)1−x(Si2)x alloys epitaxially grown on GaAs (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4977-4980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (GaAs)1−x(Si2)x metastable alloys grown on (001), (110), (112), and (111) GaAs substrates, with Si fractions in the range 0≤x≤0.43, were studied by Raman scattering. Two modes near the LO and TO modes of GaAs, besides two local modes associated either with Si–As or Si–Ga and Si–Si bonds, are observed in the Raman spectra. The ratio of integrated intensities of TO-like and LO-like modes (ITO/ILO) is used to evaluate the short range order. It is observed that the zinc blende to diamond transition reported in the literature for these alloys does not influence the Si fraction dependence of the short range order. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410886
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of growth direction on order–disorder transition in (GaAs)1−x(Ge)2x semiconductor alloys (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2497-2499 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We provide direct evidence of the dependence of the critical concentration of IV-type atoms at the order–disorder transition in ternary metastable (III–V)–IV, zincblende–diamond semiconductor alloys on the growth direction. The excellent agreement between the experimental and model predicted critical concentrations is evidence that the atomic ordering in these alloys is ruled almost entirely by substrate geometry. In this letter, we report the observation of the critical concentration dependence on substrate orientation in (GaAs)1−x(Ge2)x metastable alloys, epitaxially grown on (001), (111), (112), and (113) oriented GaAs. A different long-range order parameter behavior with Ge concentration is obtained for each growth direction. The Ge critical concentrations observed are 0.36, 0.96, 0.59, and 0.50±0.03, for the orientations listed above, values that compare well with those obtained from a Monte Carlo simulation of the growth, 0.33, 1.0, 0.64, and 0.54, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318722
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  • 5
    Electronic Resource
    Electronic Resource
    High-affinity binding ofβ-alanine to cerebral synaptosomes might involve glycine-receptors (1978)
    Springer
    Cellular and molecular life sciences 34 (1978), S. 1169-1170 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary High-affinity, Na+-independent binding of β-alanine to a synaptosomal fraction of rat brain was potently inhibited by glycine and by some other α-amino acids, but not by taurine or GABA. This binding mechanism, which was also sensitive to both bicuculline and strychnine, might involve synaptic receptors for both β-alanine and glycine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01922937
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    Paper (German National Licenses)
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