ISSN:
1573-1979
Keywords:
microwave measurements
;
SOI technology
;
small-signal parameters
;
modeling
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
Abstract SOI devices are frequently used nowadays in the RF and HF field. Design of complex SOI integrated circuits involves a prior detailed analog simulation, that can only be performed through accurate SOI active components models. We are interested here in linear operation modeling; we test new methods for small-signal parameters determination, suitable for a conventional MOSFET high-frequency model and somewhat inspired from methods applied to MESFET technology. In this paper, we deal mainly with extrinsic parameters, for which we obtain reliable estimation on a large frequency range. Our finally adopted extraction procedure takes closely into account the model topology, which reflects the device electrical behavior. We completely describe the procedure, from measurements to the extracted equivalent circuit simulation, without having to optimize parameters and with a straightforward extrinsic elements extraction.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008332732738
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