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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1790-1793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent p-type conducting CuGaO2 thin films were prepared on α-Al2O3 (001) single-crystal substrates by pulsed laser deposition. The films were grown epitaxially on the substrates in an as-deposited state. X-ray pole figure analysis revealed that the films were composed of two types of epitaxial grains, both with c axes oriented perpendicular to the surface and a axes rotated 60° with respect to each other around the c axis. Observation of the CuGaO2 thin films by atomic force microscopy and high-resolution transmission electron microscopy substantiated this conclusion. The films have high optical transparency (∼80%) in the visible region, and the energy gap of CuGaO2 for direct allowed transition was estimated to be 3.6 eV. p-type conductivity was confirmed by Seebeck and Hall measurements. The electrical conductivity, carrier (positive hole) density, and Hall mobility of the films at room temperature were 6.3×10−2 S cm−1, 1.7×1018 cm−3, and 0.23 cm2 V−1 s−1, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337587
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  • 2
    Electronic Resource
    Electronic Resource
    Carrier generation in highly oriented WO3 films by proton or helium implantation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2017-2022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of H+ or He+ ions into highly oriented WO3 films, which were deposited on sapphire R-plane substrates by the pulsed laser deposition method, was carried out to generate carrier electrons. X-ray diffraction measurements revealed that the films consisted of only the two types of grains that were epitaxially grown with their c axes perpendicular to the surface of the substrate. After implantation to a dose of 1×1017 cm−2, a remarkable increase in conductivity at 300 K was observed to 200 Scm−1 for H+ implantation or to 3 Scm−1 for He+ implantation. The efficiency of carrier generation was ∼60% for H+ implantation or ∼10−3% for He+ implantation. This striking difference demonstrates that the chemical effect of bronze formation is much more effective for carrier generation in WO3 than is the physical effect of oxygen vacancy formation by nuclear collision processes. The resulting conductivity of the oriented films was higher by 1–3 orders of magnitude than that of the corresponding polycrystalline film prepared by the rf sputtering method. Hall mobility in the oriented films (∼1 cm2 V−1 s−1) was as high as that (1–2 cm2 V−1 s−1) in single-crystal Na0.40WO3 or WO2.99 and was higher by several orders of magnitude than that in polycrystalline films. The results of Hall voltage and x-ray diffraction measurements led to the conclusion that the higher conductivity in the highly oriented films mainly originates from an increase in carrier mobility, which results from decreases in grain boundary effects as scattering centers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496120
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  • 3
    Electronic Resource
    Electronic Resource
    Carrier doping into MgIn2O4 epitaxial thin films by proton implantation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2112-2117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of MgIn2O4 were grown on MgO(100) single-crystal substrates through the pulsed laser deposition technique. X-ray diffraction measurements revealed film orientations MgIn2O4(h00)//MgO(h00) and MgIn2O4(0k0)//MgO(0k0), respectively. Proton implantation was applied to generate carrier electrons in the films. The electrical conductivity of the as-deposited films is below ∼10−7 S cm−1 at room temperature. The maximum conductivity of ∼70 S cm−1 was obtained by the implantation. Hall voltage measurements revealed that H+ implantation causes carrier generation in proportion to H+ fluence without reduction of electron mobility. Following the post-annealing process resulted in further enhancement of the conductivity in each H+-implanted film, as conductivity and generation efficiency were found to increase up to ∼2×102 S cm−1 and ∼95% at the maximum, respectively. This differs from the behavior of polycrystalline films in which conductivity decreased by post-annealing due to a decrease in the Hall mobility of electrons. Thus it is concluded that crystal quality is crucial for heavy carrier doping by ion implantation, especially when utilizing post-annealing treatments to enhance the carrier generation efficiency without reduction of the Hall mobility. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418425
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  • 4
    Electronic Resource
    Electronic Resource
    Nuclear magnetic resonance and nuclear quadrupole resonance studies of 61Ni in heavy fermion compounds Ce7Ni3 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5134-5136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heavy fermion compound Ce7Ni3 is an antiferromagnet with TN∼1.7 K. According to the high pressure experiment, this compound has undergone a transition to a non-Fermi liquid state at ∼0.32 GPa and has recovered a Fermi liquid state at ∼0.62 GPa again. Before the high pressure nuclear magnetic resonance (NMR) study through two transitions, we have performed NMR experiments of 61Ni, 59Co and 63Cu in order to clarify the electronic states at ambient pressure. Two kinds of partially overlapping Ni NMR spectra were observed in Ce7Ni3 containing an enriched 61Ni. This result may be ascribed to two intrinsic local fields presumably due to the lattice distortion, etc. All the relaxation rates studied here are proportional to temperature above 1.4 K in the paramagnetic state, which indicates that the systems are in the Fermi liquid state at ambient pressure. The increase of (1/T1T) with increasing Co concentration, CCo, tells us that the partial density of states on Ni-3d states at Fermi level, N(EF)Ni, increase with CCo. On the contrary, CCu-independent (1/T1T) values indicate N(EF)Ni keep almost constant with Cu doping. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373273
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  • 5
    Electronic Resource
    Electronic Resource
    Atomic ordering in the LaFe0.5Mn0.5O3 solid solution film (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 512-514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: LaFe0.5Mn0.5O3 solid solution films have been formed on SrTiO3 (111) substrates using a pulsed laser deposition technique and their magnetic properties have been examined. The films showed ferromagnetic (or ferromagnetic) behavior with a Curie temperature of 380 K and the saturation magnetization was estimated to be about 1.5μB per magnetic ion site (B site). The x-ray photoemission spectra indicated that this behavior was due to the partial ordering of magnetic ions (Fe and Mn ions) which is caused by the charge disproportion between Fe and Mn ions under the film formation conditions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343844
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  • 6
    Electronic Resource
    Electronic Resource
    Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2333-2335 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sharp optical absorption and emission peaks near the band gap (Eg(approximate)3.1 eV) were observed in LaCuOS polycrystalline thin films at room temperature. The absorption peak was able to be detected at temperatures as high as 490 K, and its intensity remarkably increased with decreasing temperature. The spectral position of the absorption peak and its temperature dependence almost agreed with those of the emission peak. It was concluded that the sharp absorption and emission peaks originate from excitons. On the basis of semiquantitative consideration about the excitons, it is suggested that the electronic-structure characteristic of the layered-crystal structure of LaCuOS is responsible for the stability of the excitons. The observation of the exciton absorption and emission at room temperature revealed that LaCuOS is a promising material for optoelectronic applications such as light-emitting devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1364656
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  • 7
    Electronic Resource
    Electronic Resource
    72 W Nd:Y3Al5O12 ceramic laser (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3586-3588 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-power continuous-wave polycrystalline 1% Nd:Y3Al5O12 (Nd:YAG) ceramic rod laser was demonstrated. With 290 W/808 nm laser diode pumping, cw laser output of 72 W was obtained at 1064 nm. The optical-to-optical conversion efficiency is 24.8%. Thermally induced birefringence properties of Nd:YAG ceramic was also investigated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378053
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  • 8
    Electronic Resource
    Electronic Resource
    Transparent p-type semiconductor: LaCuOS layered oxysulfide (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2701-2703 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: La1−xSrxCuOS (x=0, 0.05) thin films prepared by radio-frequency sputtering were found to have high optical transmission (≥70%) at the visible and near-infrared wavelengths and an energy gap of about 3.1 eV. The dc electrical conductivities of x=0 and 0.05 thin films at room temperature were 1.2×10−2 and 2.6×10−1 S cm−1, respectively. The Seebeck coefficients of these samples were positive, indicating that p-type electrical conduction is dominant in these materials. A sharp photoluminescence peak, probably originating from an interband transition, was observed at the optical absorption edge. The present study demonstrates that LaCuOS is a promising transparent p-type semiconductor for optoelectronic applications. Moreover, our material design, based on chemical modulation of the valence band, was successfully extended to oxysulfide systems. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319507
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  • 9
    Electronic Resource
    Electronic Resource
    Notes. The Triterpenes of Befaria racemosa (Vent.) (1961)
    s.l. : American Chemical Society
    The @journal of organic chemistry 26 (1961), S. 271-272 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01060a623
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  • 10
    Electronic Resource
    Electronic Resource
    Ge-doped Raman fiber amplifier with enhanced signal-to-noise ratio using second Stokes control pulses (2000)
    Springer
    Applied physics 70 (2000), S. 169-173 
    Details
    ISSN: 1432-0649
    Keywords: PACS: 42.60D; 42.81; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. A Ge-doped Raman fiber amplifier with enhanced signal-to-noise ratio is numerically analyzed using second Stokes control pulses. Inter-pulse noise power in the signal to be amplified is moved to the second Stokes pulse and therefore the signal-to-noise ratio for the amplified signal pulse is enhanced. The effects of different kinds of second Stokes pulse on the signal are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/
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