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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2333-2336 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a systematic experimental study of the transient reflectivity of low-temperature grown GaAs as a function of excitation wavelength, excitation density, and lattice temperature. We observe that the reflectivity decay is temperature independent for excitation energies between 20 and 70 meV above the band gap of GaAs. Under this condition the reflectivity increases linearly with excitation density and is in very good quantitative agreement with the Drude model. Subsequently, we present a model which allows the extraction of the diameter and density of As clusters in low-temperature grown GaAs from the reflectivity decay. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5777-5784 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Different types of electrochromic devices for thermal emittance modulation were developed in the spectral region from mid- to far-infrared (2–40 μm). In all devices polycrystalline and amorphous tungsten oxide have been used as electrochromic and ion storage layer, respectively. Two types of all-solid-state devices were designed, one with a metal grid for the top and bottom electrode deposited on a highly emissive glass substrate, and another with a top metal grid electrode and a highly reflecting bottom metal electrode layer. Tantalum oxide is used as an ion conductor in both device types. The third device type consists of a polymeric ion conductor. All solid-state constituent layers were grown by either reactive or nonreactive dc or rf magnetron sputtering in a high vacuum environment. Modulation of the emittance is accomplished by reversible insertion of Li ions into polycrystalline WO3 by applying and switching a small voltage across the structure. Spectrally dependent measured reflectance modulation of the device has been used to determine the device emissivity modulation with respect to the blackbody emissivity spectra at 300 K. Best device performance was found in both solid-state devices showing an emissivity modulation of about 20%. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Membrane currents and changes in the intracellular Ca2+ concentration ([Ca2+]i) were measured in HEK293 cells transfected with the human P2X3 receptor (HEK293-hP2X3). RT-PCR and immunocytochemistry indicated the additional presence of endogenous P2Y1 and to some extent P2Y4 receptors. P2 receptor agonists induced inward currents in HEK293-hP2X3 cells with the rank order of potency α,β-meATP ≈ ATP 〉 ADP-β-S 〉 UTP. A comparable rise in [Ca2+]i was observed after the slow superfusion of ATP, ADP-β-S and UTP; α,β-meATP was ineffective. These data, in conjunction with results obtained by using the P2 receptor antagonists TNP-ATP, PPADS and MRS2179 indicate that the current response to α,β-meATP is due to P2X3 receptor activation, while the ATP-induced rise in [Ca2+]i is evoked by P2Y1 and P2Y4 receptor activation. TCE depressed the α,β-meATP current in a manner compatible with a non-competitive antagonism. The ATP-induced increase of [Ca2+]i was much less sensitive to the inhibitory effect of TCE than the current response to α,β-meATP. The present study indicates that in HEK293-hP2X3 cells, TCE, but not ethanol, potently inhibits ligand-gated P2X3 receptors and, in addition, moderately interferes with G protein-coupled P2Y1 and P2Y4 receptors. Such an effect may be relevant for the interruption of pain transmission in dorsal root ganglion neurons following ingestion of chloral hydrate or trichloroethylene.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5166-5174 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous tantalum oxide thin films were deposited by reactive rf magnetron sputtering onto [001] silicon substrates. Growth temperature, oxygen partial pressure, and total gas pressure have been varied to obtain thin films with different densities. The thin films were analyzed by glancing angle-of-incidence x-ray diffraction, atomic force microscopy, and variable angle-of-incidence spectroscopic ellipsometry in the near infrared to vacuum ultraviolet spectral region for photon energies from E=1 to 8.5 eV, and in the infrared region from E=0.03 to 1 eV. We present the dielectric function of amorphous tantalum oxide obtained by line shape analysis of the experimental ellipsometric data over the range from E=0.03 to 8.5 eV (40 μm–145 nm). In the infrared spectral region the ellipsometric data were analyzed using Lorentzian line shapes for each absorption mode observed in the spectra. Amorphous tantalum oxide optical properties in the near infrared to vacuum ultraviolet spectral region were extracted by using a Kim and Garland parameter algorithm [C. C. Kim et al., Phys. Rev. B 45, 11 749 (1992)] in order to model the absorption due to the fundamental band gap of the material. We consider thin film porosity, and therefore analyzed the experimental ellipsometric data by an effective medium approach. We obtain information on the tantalum oxide optical properties, a percentage of void fraction, and film thickness. The "optical" percentage of void fractions corresponds to surface roughness measured by atomic force microscopy and depends on deposition parameters. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2593-2599 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure hexagonal h, as well as mixed-phase cubic/hexagonal c/h boron nitride (BN) thin films were deposited onto [001] silicon substrates using the dual ion beam deposition technique. The BN thin films were grown under UHV conditions at different substrate temperatures and ion beam bombarding parameters. Thin-film growth was monitored using in situ spectroscopic ellipsometry at 44 wavelengths between 420 and 761 nm. The in situ ellipsometric Ψ and Δ data were compared with two-layer growth model calculations for the mixed-phase c/h BN, and with one-layer growth model calculations for pure h-BN growth. In situ data provide information on the optical properties of deposited h-BN and c/h-BN material, film thickness, and BN growth rates. A virtual interface approach is employed for the optical properties of the silicon substrate. The growth and nucleation of c-BN observed here confirms the cylindrical thermal spike model. The results for composition and thickness of the BN films were compared to those obtained from ex situ infrared transmission measurements and high-resolution transmission electron microscopy investigations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK and Boston, USA : Blackwell Publishers Ltd
    Metroeconomica 51 (2000), S. 0 
    ISSN: 1467-999X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: In a production price framework, a two-sectoral gravitation process with cross-over adjustments of prices and quantities is advanced. To overcome an inconsistency in the treatment of fixed capital in disequilibrium, the socio-technological input coefficients are assumed to vary with the sectoral output–capital ratio, such that for each relative price there exists an optimal degree of capital utilization which maximizes the sectoral rate of profit. Production prices prevail if these maximizing rates of profit are equalized. In addition, a financial sector determining the rate of interest is incorporated into the model. The mathematical analysis establishes a broad scope for local stability of the long-run equilibrium position once a condition applies that ensures stability of the output adjustments in the short period.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK and Boston, USA : Blackwell Publishers Ltd
    European financial management 8 (2002), S. 0 
    ISSN: 1468-036X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: This paper compares performance and policy of foundation-owned firms and of listed corporations in Germany. Foundations have no owners so that there exist no individuals with financial ownership claims on firms which are wholly owned by foundations. This suggests weaker outside control of foundation-owned firms implying lower profitability. The empirical findings show a slightly better performance of foundation-owned firms compared to corporations. Foundation-owned firms display higher labour intensity, lower labour productivity, and lower salary levels. This policy promotes job security without endangering the viability of foundation-owned firms.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline-silicon (poly-Si) gate compatibility issues with HfO2 and Al2O3 capped HfO2 gate dielectrics are reported. It can be generally stated that chemical vapor deposition (CVD) silicon gates using silane deposited directly onto HfO2 results in electrical properties much worse compared to similar HfO2 films using platinum metal gates. However, depositing CVD silicon gates directly onto Al2O3 capped HfO2 showed greater than a 104 times reduction in gate leakage compared to the poly-Si/HfO2 and poly-Si/SiO2 controls of similar electrical thickness. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 930-932 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: All-solid-state electrochromic reflectance devices for thermal emittance modulation were designed for operation in the spectral region from mid- to far-infrared wavelengths (2–40 μm). All device constituent layers were grown by magnetron sputtering. The electrochromic (polycrystalline WO3), ion conductor (Ta2O5), and Li+ ion-storage layer (amorphous WO3), optimized for their infrared (IR) optical thicknesses, are sandwiched between a highly IR reflecting Al mirror, and a 90% IR transmissive Al grid top electrode, thereby meeting the requirements for a reversible Li+ ion insertion electrochromic device to operate within the 300 K blackbody emission range. Multicycle optical switching and emittance modulation is demonstrated. The measured change in emissivity of the device is to 20%. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2674-2676 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transparent dielectric layer coated on a high refractive index prism forms a planar leaky waveguide. The leaky mode spectrum of this layer strongly depends on the imaginary part of the layer refractive index κ. As an example the leaky mode spectrum of a doped polymer layer is studied theoretically and experimentally. For κ=0 no modes are detectable. In the range of κ(approximate)10−4, so-called "optimized leaky modes," can be observed while, in the range κ≥10−3, broad resonances with reduced reflectivity can be observed. The imaginary part of the polymer refractive index was adjusted by doping with the dye malachit green with an absorption maximum at λ=620 nm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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