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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 30 (1923), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 15 (1923), S. 80-81 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1001-1010 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface between the inorganic semiconductor p-type InP and the conjugated polymer poly(pyrrole) exhibits the electrical characteristics of a Schottky diode. Capacitance–voltage measurements yield an average barrier height of 0.62 ± 0.01 eV at temperature T =298 K. At the same temperature, the empirical quality factor, extracted from current–voltage measurements, is near unity. However, the current–voltage measurements show a deviation from thermionic emission theory as the temperature is reduced, as witnessed by the increase of the quality factor and the curvature in the Richardson plot. Such deviation is best explained by the barrier inhomogeneity model, in which the barrier becomes voltage dependent due to the interaction of a small low-barrier region with a higher surrounding potential, termed the "pinch-off" effect. Traditional current–voltage models, including image force lowering or an interfacial layer, cannot predict the temperature dependence of the current–voltage data, although thermionic field emission may facilitate current transport in the interfaces with a higher doped InP substrate. Furthermore, the probability of sufficiently energetic incident charge carriers crossing the interface, termed the transmission coefficient, is smaller than that observed in metal Schottky diodes.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 42 (1920), S. 2046-2049 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 43 (1921), S. 1615-1621 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 44 (1922), S. 460-464 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 44 (1922), S. 1466-1469 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 45 (1923), S. 2486-2493 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 433-445 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The use of temperature-dependent current–voltage and capacitance–voltage measurements in the determination of transmission coefficients, which can be related to various other heterogeneous charge-transfer rate constants, is analyzed for semiconductor interfaces characterized by a spatial distribution of barrier heights. The level of error introduced by the unknowing neglect of heterogeneity is analyzed using a discrete parallel network of regions with potentially voltage and temperature dependent effective areas and potential barriers. In general, the unknowing neglect of heterogeneity results in an overestimation of the transmission coefficient calculated from barrier heights based on capacitance–voltage measurements and an underestimation when based on barrier heights from temperature dependent current–voltage measurements (Richardson plots). Of particular focus is the calculation of transmission coefficients at semiconductor interfaces that exhibit anomalous behavior, most notably ideality or quality factors greater than unity, due to small-scale, "pinched-off," barrier inhomogeneities characterized by voltage-dependent effective barriers. In general, the meanings of various empirical treatments of current–voltage data in light of a voltage-dependent barrier height distribution are clarified with a particular focus on the extraction of equilibrium exchange current densities and the meaning of Richardson plots. To be specific, the model of Tung for pinched-off barrier inhomogeneities is used to demonstrate that multiple orders-of-magnitude errors in the calculation of transmission coefficients are possible with systems exhibiting only mildly anomalous behavior (ideality factors less than 1.3) if heterogeneity is neglected. The conditions of applied bias, dopant density, and temperature where the error is minimized are discussed along with the criteria for the rigorous extraction of transmission coefficients. The greatest confidence in the transmission coefficients occurs when the ideality factor is unity and the capacitance–voltage barrier agrees with the Richardson plot barrier. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1752-7325
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Objectives: This paper evaluates the relation of tooth loss to incidence of coronary heart disease in two large cohort studies. Methods: Participants included 41,407 men and 58,974 women free of any cardiovascular diseases at baseline. We recorded 1,654 incident coronary heart disease events (562 fatal events) among men during 12 years of follow-up and 544 events (158 fatal events) among women during 6 years of follow-up. Results: After controlling for important cardiovascular risk factors, compared to men with 25–32 teeth at baseline, men with 0–10 teeth had a significantly higher risk of coronary heart disease (relative risk [RR]/1.36; 95 percent confidence interval [CI]/1.11, 1.67). The relative risk increased to 1.79 (95% CI/1.34, 2.40) when limited to fatal events. Women with 0–10 teeth were also at increased risk of coronary heart disease compared to women with 25–32 teeth (RR/1.64; 95% CI/1.31, 2.05). The association was similar for fatal events (RR/1.65; 95% CI=1.11, 2.46). The association between number of teeth and incidence of coronary heart disease was similar between men with and without a history of periodontal disease, and there was no significant association between tooth loss during follow-up and coronary heart disease. Conclusions: This study showed a significant association between number of teeth at baseline and risk of coronary heart disease and the mechanisms to explain this association should be further clarified. [J Public Health Dent 2004;64(4):209–15]
    Type of Medium: Electronic Resource
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