ISSN:
1573-4854
Schlagwort(e):
wide gap amorphous silicon
;
photoluminescence
;
electroluminescence
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Chemie und Pharmazie
,
Maschinenbau
Notizen:
Abstract A series of samples of hydrogenated amorphous silicon (a-Si:H) was prepared from silane diluted highly with He by the microwave electron-cyclotron-resonance PE CVD. Such a wide gap (E≥2.0 eV) a-Si:H emits room temperature photoluminescence (PL) in the visible region. We attempt to reveal the microscopic origin of this PL by monitoring variations of PL intensity vs frequency of infrared vibrations in the vicinity of 2100 cm−1. We find that oligosilanes -(SiH2)n- act as one type of possible luminescence centres. We report also on room temperature electroluminescence (EL) from p-i-n junctions. Surprisingly, and unlike p-i-n structures from standard a-Si:H, weak EL radiation with external quantum efficiency of the order of 10−5% is emitted under reverse bias only. EL and PL emission spectra resemble strongly each other, except high energy wing of the EL spectrum. This high energy widening indicates the participation of hot electrons in the EL excitation mechanism.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1023/A:1009692300389
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