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  • 1
    Electronic Resource
    Electronic Resource
    Optical characterization of Cd1−xMnxTe epilayers grown by liquid-phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1023-1028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epilayers of Cd1−xMnxTe grown on CdTe substrates by liquid-phase epitaxy (LPE) are characterized by x-ray, modulated (piezo- or photo-) reflectivity, and Raman spectroscopy. The epilayers are found to be of excellent structural quality, having sharp excitonic signatures in the reflectivity spectra and highly uniform Mn concentrations. Intentional introduction of In donors during LPE growth of Cd1−xMnxTe has been verified by spin-flip Raman signals which show large Raman shifts with a Brillouin function behavior characteristic of donors in diluted magnetic semiconductors. During the LPE growth we also encountered the formation of large-area, free-standing platelets of Cd1−xMnxTe. They have been similarly characterized with x-rays, as well as modulation and Raman spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346739
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5642-5646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells were investigated by using photoluminescence, transmission electron microscopy, optical microscopy, and high resolution x-ray diffraction. The InxGa1−xN/GaN (x〉0.2) quantum wells used in this study were grown on c-plane sapphire by using metalorganic chemical vapor deposition. The interruption was carried out by closing the group-III metalorganic sources before and after the growths of the InGaN quantum well layers. The transmission electron microscopy images show that with increasing interruption time, the quantum-dot-like regions and well thickness decreased due to indium reevaporation or the thermal etching effect. As a result the photoluminescence peak position was blueshifted and the intensity was reduced. Temperature- and excitation-power-dependent photoluminescence spectra support the results of transmission electron microscopy measurements. The sizes and the number of V defects did not differ with the interruption time. The interruption time is not directly related to the formation of defects. The V defect originates at threading dislocations and inversion domain boundaries due to higher misfit strain. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410320
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  • 3
    Electronic Resource
    Electronic Resource
    Light-emission phenomena from porous silicon: Siloxene compounds and quantum size effect (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8060-8065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has long been argued whether the luminescent mechanism of anodized porous silicon is mainly due to the chemical compounds such as siloxene derivatives, or the quantum size effect. We performed a comprehensive study using atomic force microscope, infrared transmission, Raman scattering, and photoluminescence measurements in terms of various annealing temperatures. Low - temperature photoluminescence spectra have also been observed. This leads us to conclude that not only the siloxene derivatives but also the quantum size effect gives the luminescence in porous silicon. The previous pseudopotential calculations are used for the explanation of our experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356547
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  • 4
    Electronic Resource
    Electronic Resource
    Magneto-photoluminescence of acceptors near the interfaces of AlxGa1−xAs/AlyGa1−yAs heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1975-1979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of AlxGa1−xAs/AlyGa1−yAs heterostructures has been performed in presence of high magnetic fields. Under the magnetic field the broad carbon related peak becomes resolved into several narrow peaks. Experimental results and a theoretical analysis based on the single band model suggest that these peaks are due to the recombination of free electrons with holes bound to neutral carbon atoms distributed in the several atomic layers in the well side of the interfaces of the heterostructures. Magnetic fields reduce the effects of interfacial roughness and make it possible to resolve the carbon related peak into several peaks. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360170
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature induced blue shift and broadening of intersubband absorption and photocurrent spectra in GaAs/Al0.3Ga0.7As multiple quantum wells (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4394-4399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature induced blue shift of the intersubband absorption peak in GaAs/Al0.3Ga0.7As multiple quantum wells has been observed and calculated as a function of well thickness (Lw). As the temperature is lowered from 290 to 10 K, the absorption peak shifts to the higher energy by 7.1 meV. Calculation shows that the change in the barrier height dominates the blue shift at small Lw while exchange interaction is important for large Lw. At 80 K, the photocurrent spectrum (PCS) at 0 V bias (Vb) is gradually reduced and cut off by the barrier. The bias induced forbidden transition from the ground state, E1, to the second excited state, E3, is observed in PCS. The broadening of full width at half maximum of PCS is related to the bias induced forbidden transition at small bias (0〈Vb〈0.2 V) and the reduction of the barrier height and tunneling lifetime at large bias (0.2〈Vb〈2 V). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366166
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  • 6
    Electronic Resource
    Electronic Resource
    Intensity variation of photoluminescence in InxGa1−xAs/GaAs multi-quantum-well structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 333-335 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the influence of the sample structure on the photoluminescence intensity in terms of carrier diffusion and transfer phenomena in InxGa1−xAs/GaAs multi-quantum-well structures. Carrier injection from the barrier, cap, or buffer layers dominates the generation in the well when the well thicknesses are small and the excitation energy is larger than the band gap of the barrier layer. The carrier transport between wells also plays an important role in the photoluminescence particularly in the shallow wells and can be accounted for by phenomenologically introduced hopping time between wells. The hopping time varies from a few tens of picoseconds to a few hundreds of nanoseconds depending on the well composition and width. The strain relaxation of these strained layer quantum-well structures also leads to the intensity variation as well as the change in the peak position.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112362
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  • 7
    Electronic Resource
    Electronic Resource
    Correlation of optical and structural properties of light emitting porous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 855-857 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microscopic structures of light emitting porous silicon layers have been studied. The samples prepared in an aqueous HF solution by anodizing p-type silicon substrates show a strong positional dependence of photoluminescence and Raman spectra. The photoluminescence peaks are broad around 1.8 eV, where the photoluminescence intensities are comparable to that of GaAs at 5 K. We have found from Raman studies showing two characteristic peaks at 500 and 520 cm−1 that microscopic structures reveal gradual changes from porous silicon to a mixture of polycrystalline and hydrogenated amorphous phases as the probing spot is moved to the edge of the sample. This is explained by the redeposition of silicon atoms on top of the porous silicon layers near the edge of the sample as a result of liquid flow caused by bubbles of hydrogen gas which was produced near the surface of the sample during the anodization process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109605
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1812-1814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon layers prepared by anodic dissolutions of silicon wafers in aqueous HF solutions reveal either crystalline phase or intermediate phase between microcrystalline and amorphous phases, depending on the anodization conditions. The configurations of hydrogen and oxygen atoms near the surface of microstructures are directly related to the light emitting characteristics of porous silicon layers. We observed that oxidation leads to the shifts of SiHn stretching modes to higher frequencies and enhanced photoluminescence intensity, which can be correlated with a charge transfer within O—Si—H bonds. We also observed that chemical treatments in trichloroethylene have similar effects as thermal oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109557
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  • 9
    Electronic Resource
    Electronic Resource
    Anomalous photoluminescence from 3C-SiC grown on Si(111) by rapid thermal chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1757-1759 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystal 3C-SiC epitaxial films are grown on Si(111) surfaces using tetramethylsilane by rapid thermal chemical vapor deposition. Strong blue/green photoluminescence (PL) was observed at room temperature from the free films of SiC prepared by etching the Si substrate. The main PL peak energy varies from 2.1 to 2.4 eV with full widths at half-maximum between 450 and 500 meV, depending on the growth condition, excitation wavelength and excitation light intensity. A weak peak at 3.0 eV also appeared. The infrared (IR) spectra of free films of SiC exhibit modes associated with CH and OH groups. We also compared PL characteristics of free films of SiC with those from porous SiC produced by anodization of SiC/Si to determine the origin of the PL. Porous SiC shows a PL peak centered at 1.9 eV, different from those in SiC. From the analysis of the IR spectra and scanning electron microscopic images, we tentatively suggest that the origin of the PL from free films of SiC might be associated with an OH group adsorbed on defects or some localized states as is the case for an amorphous SixC1−x alloy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118648
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  • 10
    Electronic Resource
    Electronic Resource
    Substrate imposed stress-strain effect on photoluminescence in hydrogenated amorphous silicon alloys (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3007-3009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films were deposited on the unstrained and strained Si substrates by an electron cyclotron resonance plasma source. The photoluminescence spectra show that emission energies are different from each other. The redshift of photoluminescence induced by the biaxial tensile stress is increased with decreasing the temperature in the range of 0.11–0.17 eV. The stress effect also enhances the quantum efficiency significantly. The pseudomorphic growth of Si on a relaxed Si0.75Ge0.25 (100) surface provides the strain energy of about 0.17 eV. These comparable results indicate that the shift of emission energy is attributed to the stress effect perturbing the polysilane structure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120245
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