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  • 1
    Electronic Resource
    Electronic Resource
    Bias-assisted photoelectrochemical oxidation of n-GaN in H2O (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1029-1031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of gallium oxide on n-GaN was realized in H2O by bias-assisted photoelectrochemical (PEC) oxidation using Al as a counterelectrode instead of a Pt commonly used in the PEC process. Although the growth of the oxide was not observed at below 2 V, the initial oxide growth rate of 8.7 nm/min was shown at a bias of 15 V and ultraviolet light intensity of 300 mW/cm2. However, the growth rate lowered and oxide thickness was saturated to 340 nm. The saturated oxide thickness and initial growth rate were increased with the applied bias. The homogeneous oxide growth and near stoichiometric composition of Ga2O3 were observed in Auger electron spectroscopy analysis results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498863
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  • 2
    Electronic Resource
    Electronic Resource
    Interface localized states in coupled superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5325-5328 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of evaluating interface states for coupled superlattices has been developed. Explicit solutions for these states have been obtained within the framework of the Kronig–Penney model for the case of two semiconductor superlattices coupled by a tunnel barrier. The interface states are shown to be largely dependent on the coupling strength if the constituent superlattices have identical structure parameters, while insensitive to the tunnel barrier thickness if their structure parameters differ. In the latter case, electrons behave as if the system were composed of two decoupled semi-infinite superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352356
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  • 3
    Electronic Resource
    Electronic Resource
    Magneto-photoluminescence of acceptors near the interfaces of AlxGa1−xAs/AlyGa1−yAs heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1975-1979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of AlxGa1−xAs/AlyGa1−yAs heterostructures has been performed in presence of high magnetic fields. Under the magnetic field the broad carbon related peak becomes resolved into several narrow peaks. Experimental results and a theoretical analysis based on the single band model suggest that these peaks are due to the recombination of free electrons with holes bound to neutral carbon atoms distributed in the several atomic layers in the well side of the interfaces of the heterostructures. Magnetic fields reduce the effects of interfacial roughness and make it possible to resolve the carbon related peak into several peaks. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360170
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  • 4
    Electronic Resource
    Electronic Resource
    Grain boundary diffusion effects on the sputter depth profiles of Co–Ag bilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3534-3540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effects of surface roughness and grain boundary diffusion (GBD) at elevated temperatures on the Auger-electron-spectroscopy sputter depth profiles of Co–Ag bilayers and the GBD process of Ag atoms in Co. The Ag layer in the Ag/Co bilayer is transformed from a uniform layer to discrete islands by heat treatment. Enhanced mobility during sputtering at elevated temperatures makes Ag atoms migrate continually from islands to cover neighboring exposed Co, which reduces the size of Ag islands. On the other hand, the surface morphological modification of Co/Ag bilayer does not occur by heat treatment, and the depth profile at 340 °C resembles that from a uniformly intermixed film, which shows a drastic difference from that of Ag/Co. This is explained with a very thin and stable accumulation of Ag on the Co layer by GBD. A model of structural changes in Co/Ag subjected to ion sputtering at elevated temperatures is proposed on the basis of the results. The activation energy and pre-exponential factor for GBD of Ag in Co are found to be 0.46±0.06 eV and ∼1×10−8 cm2/s, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361405
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2888-2893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence properties of undoped wurtzite GaN epilayers grown on sapphire substrates with different buffer layer treatment conditions in metalorganic chemical vapor deposition (MOCVD) growth have been studied as a function of temperature. At low temperatures, very well resolved spectral features associated with the GaN band structure were observed. From the photoluminescence (PL) data for free excitons, an accurate value of the A exciton binding energy was found. The localization energies of the excitons bound to neutral acceptor are found to agree with Haynes' rule with the proportionality factor close to 0.1. The longitudinal optical (LO) phonon assisted photoluminescence associated with both the bound and free excitons has been observed. The characteristics of free excitons and their LO phonon replica have been studied in detail with the temperature variation and related to the point defects. The behavior of the peak energy and the full width at half maximum of the exciton band as a function of temperature reveals the change of the dominant recombination mechanism of the exciton with the temperature. Besides, all samples show peaks in the energy range of 3.15–3.19 eV, whose intensities vary with the annealing time of the buffer layer. We found that these peaks are related to the Zn impurity, which is unintentionally incorporated due to the memory effect in the MOCVD system. Intensities of Zn impurity related recombination and yellow band luminescence are also examined as functions of the temperature and annealing time of the buffer layer. Based on these temperature dependent PL results, the optimum growth conditions have been suggested. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369052
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation of cantilevered W tips for atomic force microscopy and apertureless near-field scanning optical microscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 2942-2947 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Tip characteristics play an important role in the resolution and sensitivity of scanning probe microscopy. Extensive efforts have been devoted to tip fabrication. Most of the research is focused on scanning tunneling microscopy applications, which require sharp and short tips. Long tips that can be bent into cantilevered tips have great potential in atomic force microscopy/apertureless near-field scanning optical microscopy applications. However, the fabrication of such tips has been rarely reported. The present work is carried out with the aim of optimizing the conditions suitable for fabricating long and sharp tungsten tips. Besides topography, optical, and spectroscopic information, electrical and magnetic measurements can also be carried out with such tips obtained with the recipe reported in this article. The long tips also make it possible to measure deep grooves/trenches. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494867
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  • 7
    Electronic Resource
    Electronic Resource
    Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2557-2559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that, above room temperature, the Hall-mobility values of different samples vary parallel with each other with temperature. We demonstrate that this anomaly is mainly due to a conductive layer near the GaN/sapphire interface for thin samples with low carrier density. Through trapping electrons, threading edge dislocations (TEDs) debilitate the epilayer contribution in a two-layer mixed conduction model involving the epilayer and the near-interface layer. The trapping may, in part, explain low mobility and anomalous transport in pure GaN layers. Scattering by TEDs is important only at low temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318728
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  • 8
    Electronic Resource
    Electronic Resource
    Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1149-1151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-band model involving the heavy- and light-hole bands was adopted to analyze the temperature-dependent Hall effect measured on Mg-doped p-type GaN epilayers. At 300 K, the hole concentration was determined to be nearly twice the Hall concentration estimated from the measured Hall coefficient, meanwhile the Hall mobility of heavy hole turned out to be only half of the measured one. It is shown that the scattering by space charge and acoustic deformation potential is anomalously enhanced in Mg-doped GaN, and that the light hole affects conspicuously the observed transport parameters. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125966
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  • 9
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth of high quality GaAs on InP using Se-doped GaAs buffer layer and grating-patterned substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2531-2533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality GaAs layers with excellent crystal quality and surface morphology were grown on InP substrates (GaAs/InP) using liquid phase epitaxy. Thin GaAs buffer layers heavily doped with Se were utilized to prevent the substrate meltback and the InP substrates patterned with gratings to reduce the dislocation density. Double crystal x-ray diffraction showed about 230 arcsec full width at half maximum of the (400) reflection, which represents significant improvement compared to the previously reported 350 arcsec of the GaAs/InP layer grown by chemical beam epitaxy using strained superlattice buffer layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113157
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  • 10
    Electronic Resource
    Electronic Resource
    Lateral wet oxidation of AlxGa1−xAs-GaAs depending on its structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3357-3359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating that the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions. The oxidation length decreases rapidly with decreasing AlAs thickness in the range of 〈80 nm and oxidation nearly stops at a thickness of ∼11 nm. Also, the oxidation rate of AlxGa1−xAs decreases quickly with decreasing Al composition, providing a high degree of oxidation selectivity. AlGaAs layers on both sides of AlAs layer reduce the lateral oxidation rate which is enhanced by the stress induced by oxidized AlAs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117305
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