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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1029-1031 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of gallium oxide on n-GaN was realized in H2O by bias-assisted photoelectrochemical (PEC) oxidation using Al as a counterelectrode instead of a Pt commonly used in the PEC process. Although the growth of the oxide was not observed at below 2 V, the initial oxide growth rate of 8.7 nm/min was shown at a bias of 15 V and ultraviolet light intensity of 300 mW/cm2. However, the growth rate lowered and oxide thickness was saturated to 340 nm. The saturated oxide thickness and initial growth rate were increased with the applied bias. The homogeneous oxide growth and near stoichiometric composition of Ga2O3 were observed in Auger electron spectroscopy analysis results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3050-3052 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fabrication process has been developed which enables us to make matrix-addressable Mo-tip field-emitter arrays (FEAs) with 0.1 μm gate aperture and 0.2 μm tip-to-tip distance. An interferometric lithography combined with a trilevel resist process which uses an imaging resist layer, a silicon oxide interlayer, and antireflective coating has been implemented to fabricate the periodic structure of the gated FEAs in an addressable matrix. The matrix-addressable FEAs have shown a turn-on voltage as low as 13 V and an emission current density of 17 mA/cm2 at a gate voltage of 30 V. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of texture studies 35 (2004), S. 0 
    ISSN: 1745-4603
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: A mixture of partially defatted peanut flour (12% fat) and rice flour was extruded to produce indirectly, puffed extrudates using a corotating twin-screw extruder. Extrudates were dried to obtain half-products of 11-12% moisture content, and the half-products were expanded by deep-fat frying. The effects of three levels of peanut flour (30, 40, and 50%), screw speed (200, 300, and 400 rpm) and feed rate (4, 5, and 6 kg/h) were studied by characterizing the cellular structure of expanded snack products using Scanning Electron Microscopy (SEM). Average cell size (mm2) and the number of cells per unit area (cm2) were determined from the interior cross-section area of snack products. Those parameters were influenced mainly by the level of peanut flour followed by screw speed and feed rate. Increasing peanut flour from 40 to 50% produced less puffed final products resulting in small cell size compared to snacks of 30 - 40% peanut flour. The maximum cell size was produced in the snack products extruded with peanut flour of 30 - 40% at screw speed of 250 - 330 rpm and feed rate of 4.7 - 5.7 kg/h. While the number of cells was relatively similar regardless of screw speed and feed rate, increasing peanut flour increased the number of cells. The cell walls became thicker with increasing feed rate.
    Type of Medium: Electronic Resource
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