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  • 1
    Electronic Resource
    Electronic Resource
    Bias-assisted photoelectrochemical oxidation of n-GaN in H2O (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1029-1031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of gallium oxide on n-GaN was realized in H2O by bias-assisted photoelectrochemical (PEC) oxidation using Al as a counterelectrode instead of a Pt commonly used in the PEC process. Although the growth of the oxide was not observed at below 2 V, the initial oxide growth rate of 8.7 nm/min was shown at a bias of 15 V and ultraviolet light intensity of 300 mW/cm2. However, the growth rate lowered and oxide thickness was saturated to 340 nm. The saturated oxide thickness and initial growth rate were increased with the applied bias. The homogeneous oxide growth and near stoichiometric composition of Ga2O3 were observed in Auger electron spectroscopy analysis results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498863
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  • 2
    Electronic Resource
    Electronic Resource
    Novel self-aligned W/TiN/TiSi2 contact structure for very shallow junctions and interconnections (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1672-1674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes a novel structure for very large scale integrated contact and interconnect technology that involves selective deposition of W on self-aligned TiN/TiSi2. The TiN layer serves to protect reaction between WF6 and TiSi2 and underlying Si during W deposition as well as to promote adhesion of W layer and minimize contact resistance. The selective deposition of W on TiN, very difficult with conventional hydrogen reduction process, is accomplished by employing a recently developed silane reduction process. The structure prevents silicon consumption leading to the encroachment commonly found in tungsten deposited directly on silicon in very shallow junctions. It is demonstrated that such a structure results in low contact resistance and junction leakages and is applicable to subhalf-micron devices. Tungsten with low resistivity of 8–9 μΩ cm can be achieved at room temperature with the resulting drop by a factor of 3–4 at liquid-nitrogen temperature making the structure more attractive for low-temperature application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101300
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  • 3
    Electronic Resource
    Electronic Resource
    Identification of QTLs for domestication-related and agronomic traits in an Oryza sativa×O. rufipogon BC1F7 population (2005)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 124 (2005), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Asian cultivated rice was domesticated from the wild rice, Oryza rufipogon and throughout the domestication process, a wide range of morphological and physiological changes altered the ancestral form. This study was conducted to identify the genetic basis of changes associated with the domestication process. An recombinant Inbred line (RIL) population consisting of 120 lines was developed from a cross between the Juponica cultivar.‘Hwayeongbyeo’and a presumed wild progenitor. O. rufipogon Griff. Acc.01944. The population was genotyped with 124 simple sequence length repeat (SSR) markers, providing an average interval size of 15 cM, and also evaluated for 20 traits related to domestication and agricultural performance. A total of 63 quantitative trait locus (QTLs) and one locus associated with qualitative variation for pericarp coloration were identified using single point and composite interval analysis. The number of QTLs per trait ranged from one to seven. Phenotypic variation associated with each QTL ranged from 3.7 to 40.4%. with an average of 15.3%. The results indicated that most domestication-related traits clustered in chromosomal blocks, and the positions of many of these clusters were consistent with those reported in previous studies and with skewed segregation ratios in these BC1,F7 RILs. For 13 (20.6%) of the QTLs identified in this study. the O. rufipogan -derived allele contributed a desirable agronomic effect despite the overall undesirable characteristics of the wild phenotype. Favourable alleles from O. rufipogan were detected for panicle length, spikelets per panicle, days to heading and leaf discoloration associated with cold stress. When compared with previous studies involving interspecific crosses, it can be concluded that O. rufipogon is useful as a source of valuable alleles for rice improvement and that many of the introgressed regions contain genes that have a favourable impact on phenotype in different genetic backgrounds and different environments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.2005.01092.x
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  • 4
    Electronic Resource
    Electronic Resource
    Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2557-2559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that, above room temperature, the Hall-mobility values of different samples vary parallel with each other with temperature. We demonstrate that this anomaly is mainly due to a conductive layer near the GaN/sapphire interface for thin samples with low carrier density. Through trapping electrons, threading edge dislocations (TEDs) debilitate the epilayer contribution in a two-layer mixed conduction model involving the epilayer and the near-interface layer. The trapping may, in part, explain low mobility and anomalous transport in pure GaN layers. Scattering by TEDs is important only at low temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318728
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  • 5
    Electronic Resource
    Electronic Resource
    The Presence of Megamitochondria in the Ellipsoid of Photoreceptor Inner Segment of the Zebrafish Retina (2005)
    Berlin, Germany : Blackwell Verlag GmbH
    Anatomia, histologia, embryologia 34 (2005), S. 0 
    Details
    ISSN: 1439-0264
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Although the megamitochondria (MM) were localized in various pathological conditions, normal retina of some mammalian species was reported to include MM for various physiological roles. However, it was not clearly confirmed whether the MM is present in the retina of lower vertebrate as well. In this study, we tried to show the presence of the MM in the zebrafish retina using electron microscopic technique. In all the photoreceptors including rods, cones and double cones of the zebrafish retina, MM were observed in the ellipsoid of inner segment. In the photoreceptor epllipsoid of the zebrafish retina, the mitochondria located in the central portion of the ellipsoid had a highly electron-dense matrix, which were accompanied by the mitochondria with electron-lucent matrix in the apical portion of the ellipsoid. The presence of MM was more clearly discernable in the rods, which were localized under the double cones. This finding is somewhat different from those observed in the previous studies because MM were localized in the inner segment of cones, but were not in those of rods in the case of mammalian retina. Although the exact physiological meaning for the presence of MM in some vertebrate species should be further studied, the present study could show that the MM in the ellipsoid of the retinal photoreceptors was not only restricted in some mammalian species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0264.2005.00612.x
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  • 6
    Electronic Resource
    Electronic Resource
    AN IMPROVED NAVIER-STOKES PROCEDURE FOR ANALYSIS OF TWO-DIMENSIONAL AEROFOILS IN LAMINAR AND TURBULENT FLOWS (1997)
    Chichester : Wiley-Blackwell
    International Journal for Numerical Methods in Fluids 25 (1997), S. 167-182 
    Details
    ISSN: 0271-2091
    Keywords: Navier-Stokes procedure ; streamline co-ordinates ; QUICK scheme ; two-layer k-ε model ; CLmax ; near wake ; Engineering ; Numerical Methods and Modeling
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: An accurate and robust Navier-Stokes procedure to predict the complex flow about an aerofoil has been developed. Much improvement over existing methods is achieved in various aspects of the solution procedure. The computational grid generated by conformal mapping, which is not only orthogonal but aligned with the inviscid streamlines, keeps the equations simple and minimizes the error due to false diffusion. Formal second-order accuracy is ensured by employing the QUICK scheme for the convective derivatives in the full Navier-Stokes and turbulence transport equations. To treat the separated region properly and to better resolve the flow field in the wake, the two-layer k-ε turbulence model is incorporated. The onset of transition is triggered in a unique fashion to warrant the smooth transition to turbulent flow. Sample calculations for various aerofoil sections show that the prediction is improved substantially over those by existing methods. The details of the flow extending to the wake, such as the surface pressure distribution, CLmax, the velocity fields and the Reynolds stress profiles, are found to be in excellent agreement with the data. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 15 Ill.
    Type of Medium: Electronic Resource
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