Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1591-1593
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We studied transport through ultrasmall Si quantum-dot transistors fabricated from siliconon-insulator wafers. At high temperatures, 4〈T〈100 K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T〈4 K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126105
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