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  • 1
    Electronic Resource
    Electronic Resource
    Ion implantation into gallium arsenide (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3429-3438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary-ion-mass-spectrometry studies of the implantation profiles of 20- to 400-keV Si, Se, and Be ions into GaAs are reported. The measured profiles are fit with Pearson-IV distributions whose moments are fit to functions of the ion energy to obtain simple, widely applicable analytical formulas. Also, profiles are measured for varying wafer tilt and rotation angles to the ion beam, and for varying dislocation densities and doses. For implantation through dielectric caps, the profiles in the GaAs can be simulated using shifted, bare-wafer Pearson-IV distributions for Be, or mixtures of shifted Pearson-IV and Gaussians for Si and Se. Also, knock-on distributions of Si and O atoms resulting from implanting through SiO2 caps were measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341475
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Novel high mobility Ga0.51In0.49P/GaAs modulation-doped field-effect transistor structures grown using a gas source molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4632-4634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A standard Ga0.51In0.49P/GaAs modulation-doped field-effect transistor (MODFET) structure and a novel Ga0.51In0.49P/GaAs MODFET structure where the Ga0.51In0.49P spacer layer was replaced by an undoped Al0.3Ga0.7As layer were grown using a gas source molecular beam epitaxy. The Hall mobility of the novel MODFET's structures are 6600 and 36 400 cm2/V s at room temperature and 77 K, respectively, which are more than twice as high as that in the ordinary Ga0.51In0.49P/GaAs MODFETs structure. The mobility is attributed to better carrier confinement and smoother heterointerface. Furthermore, it is found that both ordinary and novel MODFET's structures have small photo-persistant conductivity effects at low temperatures and that the FETs made in these materials had no threshold voltage shift at low temperatures after illumination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350768
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of electron resonant tunneling in a lateral dual-gate resonant tunneling field-effect transistor (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 176-178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new lateral resonant tunneling field-effect transistor (LARTFET) has been fabricated using molecular beam epitaxy and ultrahigh-resolution electron beam lithography. The LARTFET has two 80-nm-long gate electrodes separated by 100 nm. The dual gates create double potential barriers in the channel and a quantum well in between. Conductance oscillations are observed, which, for the first time, indicate electron resonant tunneling through the energy states in a lateral double-barrier quantum well formed electrostatically. Furthermore, after illumination, two additional negative transconductance peaks are observed. These additional peaks may be related to electron resonant tunneling through the donor-related deep levels in silicon-doped Al0.35Ga0.65As .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102113
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  • 4
    Electronic Resource
    Electronic Resource
    Lateral resonant tunneling field-effect transistor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1982-1984 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lateral resonant tunneling field-effect transistor (RTFET) is proposed. The RTFET has three closely spaced, but independent gate electrodes. The two outer gates create lateral double potential barriers in the channel, and control the barrier heights. The inner gate controls the potential of the quantum well between the barriers. These gates are capacitively coupled to the barriers and well; therefore, very small gate currents and high input impedences result. Modeling and computer simulations show that when the potential of the quantum well is scanned, the RTFET should have a better peak-to-valley ratio, narrower current peak widths, and more uniform distribution of peak and valley currents than that of a resonant tunneling diode with the same barriers and well. The independent control of the barrier heights allows us to adjust continuously the peak-to-valley ratio, amplitude, and position of current peaks. Furthermore, using an additional back gate, the peak-to-valley ratio and amplitude of peak current can also be adjusted by changing the carrier concentration next to the double barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99656
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of patterned Gex/Si1−x/Si layers by pulsed laser induced epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2150-2152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of GexSi1−x on Si is demonstrated for the first time using a pulsed laser induced epitaxy technique, combined with either standard oxide or liftoff patterning processes. Two different dimensions of Ge0.12Si0.88/Si lateral wells are formed, 3.5 μm wide by 1700 A(ring) deep, and 6 μm wide by 1300 A(ring) deep. High-resolution transmission electron microscopy, combined with energy-dispersive x-ray imaging, reveals a well-defined two-dimensional (2D) Ge redistribution profile with no significant line or surface defects observed. The 2D Ge well distribution profiles, governed by heat and mass transport during the laser processing, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104989
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  • 6
    Electronic Resource
    Electronic Resource
    Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 530-532 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 6Hα-SiC crystal sample, which has a surface amorphous layer resulting from a high-dose Ga implantation, was heated using a pulsed excimer laser at several energy fluences. At an energy fluence of 1.66 J/cm2, the in situ reflectivity measurement of the surface during laser processing indicates that melting of the SiC surface has occurred. Rutherford backscattering and channeling analysis shows that the molten amorphous SiC recrystallizes using the substrate as a seed, and that the recrystallized layer has good crystal quality. Secondary-ion mass spectrometry measurements indicate that the melting, resulting from the excimer laser pulse, results in significant redistribution of the implanted Ga. This result, the first reported for SiC, suggests that the pulsed ultraviolet process can anneal the implantation damage through a melt recrystallization process, and thus could be used to dope SiC through a gas phase adsorption process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102735
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  • 7
    Electronic Resource
    Electronic Resource
    Resonant tunneling of electrons of one or two degrees of freedom (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 657-659 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytical expressions for the tunneling current of electrons with one or two degrees of freedom (DOF), due to additional quantum confinement transverse to the electron transport direction, are explicitly derived, analyzed, and implemented into computer simulations. The results are compared with the well-known case in which 3-DOF electrons tunnel through a one-dimensional double-barrier well. The results show that the singularity of the density of states in a one-dimensional system will not manifest sharp features in tunneling current, and that when the spacing between the Fermi energy and bottom of conduction band is the same, the tunneling current peak becomes broader and the peak-to-valley ratio becomes smaller as the number of degrees of freedom of the electrons is reduced. The results also show that when scattering is neglected, the energy quantization due to transverse confinement in 1- or 2-DOF systems will not contribute any additional peaks to the tunneling current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99365
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  • 8
    Electronic Resource
    Electronic Resource
    Formation of InxGa1−xAs/GaAs heteroepitaxial layers using a pulsed laser driven rapid melt-solidification process (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1844-1846 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial InxGa1−xAs/GaAs structures have been formed for the first time by pulsed laser induced mixing of molecular beam epitaxy deposited In films (∼200 A(ring)) on GaAs (100) substrates. The process occurs by a melt-induced, rapid-mixing and solidification process driven by a XeCl pulsed excimer laser. The laser has a 27 ns full width at half maximum pulse width at 308 nm with its energy density of 0.28–0.61 J cm−2 homogenized into a 4×4 mm square area which is stepped across the wafer. InxGa1−xAs layers with x values, as determined by both x-ray diffraction and Rutherford backscattering spectrometry simulation ranging from x=0.21–0.26 and thicknesses of 77–94 nm, have been formed. The formation of single-crystal layers has been verified by 4He ion channeling and cross-section transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103065
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  • 9
    Electronic Resource
    Electronic Resource
    Room-temperature observation of resonant tunneling through an AlGaAs/GaAs quasiparabolic quantum well grown by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1422-1424 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first room-temperature observation of resonant tunneling through a double-barrier diode with a 31.5-nm-wide AlGaAs/GaAs quasiparabolic quantum well grown by molecular beam epitaxy. As the bias voltage is scanned from 0 to 4 V, 11 resonant tunneling transitions are observed at room temperature. At 77 K, 13 resonant tunneling transitions are observed; 10 of them show negative differential resistance, and the highest peak-to-valley ratio is 1.4. At 4.2 K, 17 resonant tunneling transitions are observed; 15 of them show negative differential resistance, and the peak-to-valley ratio of the first tunneling peak is 3.6. Computer simulation indicates that for the 17 resonant tunneling transitions, the first 13 are likely due to resonant tunneling through quasibound states in the well, and the remainder are due to resonant tunneling through virtual states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99135
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  • 10
    Electronic Resource
    Electronic Resource
    Nanoscale GaAs metal–semiconductor–metal photodetectors fabricated using nanoimprint lithography (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2381-2383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs metal–semiconductor–metal photodetectors (MSM PDs) with a variety of nanoscale finger spacings and widths were fabricated using nanoimprint lithography (NIL). Compared with MSM-PDs fabricated using electron-beam lithography and photolithography, the MSM-PDs fabricated using NIL do not show observable degradation in the device characteristics if the imprinting pressures are kept at 600 psi or below, although they do degrade at higher pressures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123858
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