Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2381-2383
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
GaAs metal–semiconductor–metal photodetectors (MSM PDs) with a variety of nanoscale finger spacings and widths were fabricated using nanoimprint lithography (NIL). Compared with MSM-PDs fabricated using electron-beam lithography and photolithography, the MSM-PDs fabricated using NIL do not show observable degradation in the device characteristics if the imprinting pressures are kept at 600 psi or below, although they do degrade at higher pressures. © 1999 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.123858
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