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Digitale Medien

Double-dot charge transport in Si single-electron/hole transistors (2000)

Rokhinson, L. P. ; Guo, L. J. ; Chou, S. Y. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 1591-1593

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We studied transport through ultrasmall Si quantum-dot transistors fabricated from siliconon-insulator wafers. At high temperatures, 4〈T〈100 K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T〈4 K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.126105

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