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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 883-892 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A corona discharge supersonic free-jet is shown to be a nearly pure source of A 3Σu+ metastable molecular nitrogen, an electronically excited and chemically active form of N2 that is ideally suited to nitride semiconductor growth. Optical emission spectroscopy at various distances downstream of the supersonic nozzle reveals a cascade through the excited state manifold of N2 triplet states to populate the A 3Σu+ state. Appearance potential spectroscopy (mass spectrometer electron bombardment ionization yield, measured as a function of electron impact energy) delivers the composition of the terminal molecular beam. A 3Σu+ molecules are the dominant activated species in the beam, which otherwise contains only nonreactive X 1Σg+ ground state nitrogen molecules plus a minor amount of 4S0 nitrogen atoms. Up to 1.56% number fraction of the beam is A 3Σu+, providing 1.0×1017 metastables sr−1 s−1. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3030-3032 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial III-N semiconductor films, ranging in thickness from 300 to 900 Å, have been grown using A3Σu+ metastable nitrogen molecules. The work employed a corona discharge supersonic free-jet to generate a molecular beam containing exclusively the A3Σu+ activation state in an otherwise ground state N2 beam. AlN films were grown on 6H–SiC(0001) and Si(001) substrates. GaN films were grown on the same substrates and on buffer layers of AlN deposited in situ on 6H–SiC(0001). The N-atom incorporation efficiency (the number of N atoms attaching to a III–N surface per incident A3Σu+ molecule) approached 100% and was independent of substrate temperature from 600 to 900 °C, implying direct molecular chemisorption of the A3Σu+. These measurements support theoretical predictions that A3Σu+ is an ideal precursor for III–N growth. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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