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  • 1
    Electronic Resource
    Electronic Resource
    Ion-induced desorption of (H2O)nH+ ion clusters (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 4701-4705 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The mass distribution of (H2O)nH+ ion clusters desorbed from ice at 78 K was measured for 1≤n≤40. The desorption was induced by bombardment of the ice by three different primary ions, Ne+, Ar+, and Kr+ at 6 keV. The mass distribution can be described by RRK theory which fits the relative ion yields Yn/Y1, i.e., the ratio of the yield of the nth cluster to that of the first cluster, as a function of n. The energy deposited per normal mode required for desorption caused by each bombarding ion species is calculated from our theoretical fits to the experimental data. This is then compared with the energy deposited per mode estimated from the energy loss due to nuclear stopping of the bombarding ion in the ice. Reasonable agreement between the two is obtained. The existence of the "magic number'' cluster ion (H2O)4H+ was observed in each of the three bombardment schemes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452684
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  • 2
    Electronic Resource
    Electronic Resource
    Mass distribution of ejected molecules and clusters in noncascade sputtering processes (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 3641-3645 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model of noncascade sputtering is proposed to explain the mass distribution observed by MacFarlane and co-workers in the sputtering of insulin by 90 MeV 127I20+ ions. The ejection of molecular ions from insulin is considered to be induced by vibrational excitation. The ensuing calculations using RRKM theory show that the relative abundance of the ejected species can be fitted to our model yielding realistic values for both the energy deposited by the incident ion and the activation energies required for the ejection of the molecular species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.448898
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  • 3
    Electronic Resource
    Electronic Resource
    Quantitative Spectrochemical Analyses of Feldspars by Ion Bombardment (1974)
    [s.l.] : Nature Publishing Group
    Nature 248 (1974), S. 43-45 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Table 1 Feldspar Analyses. Number of Ions on the Basis of Thirty-two Oxygens 112 (standard) 190 191 297 Microprobe IBSCA Microprobe Chemical Chemical IBSCA Microprobe IBSCA Microprobe Si 10.086 9.34 9.423 9.341 9.293 11.23 11.132 9.92 9.990 Al 5.916 6.63 6.523 6.628 ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/248043a0
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  • 4
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy of an ion-bombarded PbS(001) surface (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2039-2041 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Freshly cleaved (001) surfaces of single crystalline PbS were bombarded by 8 keV Kr+ ions at a dose of 3×1012 cm−2. Atomically resolved scanning tunneling microscopy (STM) images were taken showing damaged areas due to individual ion impacts. Analysis of a STM image shows a shallow impact crater, a stacking fault, displacement of Pb2+ and S2− ions from their regular surface sites, and migration of interstitials to the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100312
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  • 5
    Electronic Resource
    Electronic Resource
    III-N semiconductor growth with activated nitrogen: State-specific study of A3Σu+ metastable N2 molecules (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3030-3032 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial III-N semiconductor films, ranging in thickness from 300 to 900 Å, have been grown using A3Σu+ metastable nitrogen molecules. The work employed a corona discharge supersonic free-jet to generate a molecular beam containing exclusively the A3Σu+ activation state in an otherwise ground state N2 beam. AlN films were grown on 6H–SiC(0001) and Si(001) substrates. GaN films were grown on the same substrates and on buffer layers of AlN deposited in situ on 6H–SiC(0001). The N-atom incorporation efficiency (the number of N atoms attaching to a III–N surface per incident A3Σu+ molecule) approached 100% and was independent of substrate temperature from 600 to 900 °C, implying direct molecular chemisorption of the A3Σu+. These measurements support theoretical predictions that A3Σu+ is an ideal precursor for III–N growth. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323739
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of 6H–SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 985-987 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial AlN films were grown on 6H–SiC(0001) substrates using an ammonia supersonic seeded beam. The films grown on substrates etched in hydrogen at high temperatures were shown by ion beam channeling to exhibit a higher degree of order relative to those grown on the as-received substrates. Cross-sectional electron microscopy revealed sharper SiC–AlN interfaces with extended flat terraces. In particular, very few stacking mismatch boundaries were observed to originate from the 1.5 nm steps which correspond to the 6H stacking sequence of the substrate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123431
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  • 7
    Electronic Resource
    Electronic Resource
    Two-step preparation of 6H–SiC(0001) surface for epitaxial growth of GaN thin film (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2468-2470 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scratch-free and atomically flat 6H–SiC(0001) surface has been successfully prepared by a two-step method which combines atmospheric hydrogen treatment and ultrahigh vacuum Si etching. On this surface, a high-quality GaN(0001) thin film is obtained by radio frequency nitrogen plasma assisted molecular beam epitaxy. Its surface exhibits a typical terrace-plus-step morphology, which enables us to study various GaN(0001) surface superstructures and hollow-core defects with atomic resolution by scanning tunneling microscopy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123883
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2880-2882 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550–750 °C, considerably below the miscibility gap of SiC and AlN phases at 1900 °C. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H–SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413723
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  • 9
    Electronic Resource
    Electronic Resource
    Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 989-991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the homoepitaxial growth of GaN(0001) layers was conducted in situ and in real time using the low-energy electron microscope. The Ga flux was supplied by an evaporative cell while the NH3 flux was supplied via a seeded-beam supersonic jet source. At growth temperatures of 665 °C and 677 °C, smooth GaN(0001) layers with well-defined step structures were grown on GaN(0001) substrates prepared by metalorganic chemical vapor deposition. In general, nonfaceted homoepitaxial layers were achieved when the Ga/NH3 flux ratios exceeded 2, starting with a Ga-covered substrate surface, in the temperature range of 655–710 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124575
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  • 10
    Electronic Resource
    Electronic Resource
    Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 822-824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution electron microscopy and matching simulations were used to investigate structural features of a GaN/SiC heterointerface. The polarity of the (0001)-oriented SiC substrate was confirmed and it was shown that the polarity of the GaN epilayer corresponded to Ga-terminated (0001) growth. From measurement of average (11¯00) rather than (000l) interplanar spacings it was established that the GaN/SiC interface was abrupt to within one atomic plane. It was concluded that the atomic arrangements at the GaN/SiC interface most likely consisted of N bonded with Si, but with some Ga bonded to C in order to maintain charge balance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125596
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