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  • 1
    Electronic Resource
    Electronic Resource
    Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 175-186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic nature of the degradation of oxide layers in Si/SiO2/Si structures induced by annealing in the temperature range 1200–1320 °C in inert or weakly oxidizing atmospheres has been studied. Electron-spin-resonance measurements have been performed on unannealed and annealed samples subsequently subjected to γ or X radiation or hole injection. Two oxygen-vacancy-related defect centers were observed, the monovacancy Eγ' center and the multiple vacancy Eδ'—both were observed in substantially larger numbers in annealed oxides as compared to unannealed oxides. Etchback profiling of the paramagnetic defect distributions shows that they are distributed nonuniformly throughout the annealed oxides with the highest densities close to the two Si/SiO2 interfaces. Electrical measurements of fixed oxide charge induced by X irradiation indicate that annealing results in the creation of both positive and negative charge traps. The numbers of positive trapped charges and their radiation dose dependence are inconsistent with their origin being identified simply with the paramagnetic oxygen-vacancy centers. Infrared measurements of the O interstitial content of the float-zone Si substrates of annealed and unannealed samples reveal that the interstitial concentration increases as a function of anneal temperature/time. Atomic force microscopy measurements reveal that the SiO2/Si substrate interfaces are roughened during high-temperature annealing. The data are interpreted in terms of a model in which oxygen is gettered from the oxide film into the over- and underlying Si. The O are incorporated into the Si as interstitials and it is their solubility limit at the anneal temperature which drives the gettering process. The oxygen-vacancy defect profiles near to both Si/SiO2 interfaces are not well predicted by the gettering model suggesting that other interface-related defect creation processes may be active. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359365
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  • 2
    Electronic Resource
    Electronic Resource
    Heat transfer between two metallic surfaces at small distances (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7209-7216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In scanning thermal microscopy, but also in scanning tunneling microscopy, the thermal contact between tip and sample plays an important role. The heat transfer across the vacuum gap between two parallel metallic surfaces, if the gap width is decreased below several microns, has been investigated. At these distances propagating electromagnetic modes die out but simultaneously a transfer of nonpropagating surface modes across the gap becomes more probable. The heat conductance of the vacuum gap should become distance dependent and larger than that given by the Stefan–Boltzmann law; however, the experimental results and theoretical considerations indicate that the heat transfer, based on the discussed proximity mechanism, is very small, smaller than predicted by the theory of Polder and Van Hove [Phys. Rev. B 4, 3303 (1971)]. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358001
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal sensors for investigation of heat transfer in scanning probe microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2262-2266 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Planar thermocouples designed for investigation of heat transfer in scanning tunneling microscopy and scanning thermal microscopy are described. The limit of sensitivity to local thermal power can be as small as 10 nW. The devices are based on two different thin films formed as a cross on a thin glass substrate. Heat fluxes in the cross point can be detected by measuring the thermoelectric signal from two ends of the cross. As described elsewhere planar thermocouples of this type have been successfully used to detect the energy which is deposited by tunneling electrons and to measure the heat which is coupled across a submicron vacuum gap between two metals by the fluctuating fields of electromagnetic surface modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145225
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  • 4
    Electronic Resource
    Electronic Resource
    A novel bimorph-type actuator for use in scanning probe microscopes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3332-3333 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a novel bimorph-type piezoelectric transducer which achieves three-dimensional positioning in a 70 μm ×70 μm ×10 μm volume with applied voltage ranges less than 100 V. This transducer, appropriately shaped and with appropriately patterned electrodes, has been tested by using it as a scanner in a scanning tunneling microscope. Results obtained in this application of the actuator are presented, including characterization of performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144301
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  • 5
    Electronic Resource
    Electronic Resource
    Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 955-957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[11¯0]||GaN[112¯0]||Al2O3[112¯0]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371966
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  • 6
    Electronic Resource
    Electronic Resource
    Structural and magnetic properties of Fe–Ge layer produced by Fe ion-implantation into germanium (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1410-1416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe ions were implanted into Ge (110) using a metal vapor vacuum arc ion source. The samples were characterized by Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and superconducting quantum interference device magnetometry. The crystalline quality of the implanted layer was identified by RBS random/channeling measurements. The depth profile of the implanted Fe ions was obtained by AES. Low dose implantation causes formation of Fe–Ge precipitates whereas high dose implantation causes formation of Fe precipitates in the implanted layer as confirmed by TEM and XPS measurements. Magnetic measurements show the superparamagnetism of the Fe and Fe–Ge clusters at high temperatures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427135
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  • 7
    Electronic Resource
    Electronic Resource
    Step flow growth of (La,Ca)MnOδ thin films on (110)NdGaO3 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3272-3274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Step flow growth patterns have been observed on single-crystal (La,Ca)MnOδ (LCMO) thin films by atomic force microscopy. These films were grown on (110) NdGaO3 substrates by a simple facing-target sputtering method. The steps, of monolayer height (0.2 nm), are surprisingly straight and evenly spaced. The best sample has an average step width of about 400 nm which is comparable to that found on the molecular beam epitaxially grown GaAs. The step edges are parallel to the LCMO [001] direction indicating that the growth rates are anisotropic. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114895
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: "Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method" [Appl. Phys. Lett. 74, 1221 (1999)] (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2151-2151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124947
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  • 9
    Electronic Resource
    Electronic Resource
    The Surrey STM: Construction, development, and evaluation of a scanning tunneling microscope (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 3010-3021 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A scanning tunneling microscope has been built together with the necessary controlling electronics. Currently this is used at atmospheric pressure but is capable of use under vacuum with minor modifications. Trials of the system, and subsequent adjustments, have taken place using highly oriented pyrolitic graphite and gold evaporated on silicon samples. Good and versatile control of tunneling current was achieved. We report on the design, development, construction, and evaluation of the instrument. Preliminary results illustrating reproducible topographical images are presented and discussed. Gap-versus-bias voltage and gap-versus-tunneling current characteristics are also presented and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142147
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial (100) silicon films grown at low temperatures in an electron-beam evaporator (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1252-1255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial silicon films were grown on (100) silicon wafers at temperatures between 650 and 700 °C without the need of special cleaning procedures. Deposition rates were from 30 to 80 nm/min. The structure of films was analyzed by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectroscopy. The films were doped by ion implantation. Electrical activity, Hall mobility, and sheet resistivity of the doped layers were measured. Both structural and electrical characterization yielded results indistinguishable from good-quality bulk wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334522
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