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  • 1
    Electronic Resource
    Electronic Resource
    Concentration dependence of the dielectric constant in mixed oxides MxOyMp′Oq (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 389-393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric constants in mixed oxides ZrO2+Y2O3, Ta2O5+TiO2, Ta2O5+Y2O3, and ZrO2+SiO2 are examined in the context of the oxide additivity rule for molecular polarizability. The experimentally observed concentration dependence of the dielectric constant can be satisfactorily explained by taking account of effective molecular polarizability and molecular volume changes. The simple rule thus enables predictive study of the dielectric constant of oxide alloys. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1375806
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  • 2
    Electronic Resource
    Electronic Resource
    Comparitive behavior of radiation and thermally generated protons in amorphous SiO2 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2246-2250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the transport of thermally and radiation generated protons in amorphous SiO2 gate dielectrics of metal–oxide–semiconductor field effect transistors are compared. I conclude that there is no significant behavioral difference between the two types of protons other than the fact that radiation generated protons transport more dispersively—this may be related to the proton densities involved which are typically more than 50 times smaller. From the inversion channel carrier mobility and subthreshold slope measurements on devices with thermally generated protons I conclude that the interfaces are essentially unpassivated. This observation explains why no proton induced interface state generation is observed in the case of devices containing thermally generated protons. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339206
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  • 3
    Electronic Resource
    Electronic Resource
    Comparative study of radiation-induced electrical and spin active defects in buried SiO2 layers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3634-3640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of paramagnetic defect and positive fixed oxide charge creation in x-irradiated buried SiO2 formed by ion implantation and annealing are presented. Charged oxygen-vacancy centers are argued to be the source of spin active defects but not the primary source of fixed oxide charge. Hydrogenation or fluorination of the oxide enhances the radiation sensitivity for creation of spin active defects but not of trapped positive charge. Annealing of the spin active defects may proceed by a mechanism similar to that involved in charged defect annealing or by the trapping of thermally detrapped, diffusing electrons. Annealing does not involve the trapping of diffusing molecular species as is usual in bulk oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352306
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  • 4
    Electronic Resource
    Electronic Resource
    Shallow oxygen-related donors in bonded and etchback silicon on insulator structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 508-510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using electron paramagnetic resonance we have been able to identify a new oxygen-related donor defect in the Si substrate of bonded and etchback silicon-on-insulator structures. This axially symmetric donor is preferentially aligned along the [100] direction, and resides close to the Si/SiO2 interface. It is tentatively suggested that the donors result from the nonoxidizing anneal received by the wafers during the bonding process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111112
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  • 5
    Electronic Resource
    Electronic Resource
    Links between oxide, interface, and border traps in high-temperature annealed Si/SiO2 systems (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3452-3454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence is provided to show that enhanced hole-, interface-, and border-trap generation in irradiated high-temperature annealed Si/SiO2/Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies. We find that the calculated oxygen vacancy due to high-temperature anneals from 800 to 950 °C in metal-oxide-semiconductor capacitors closely matches the radiation-induced oxide-trapped charge. This strongly suggests that oxygen vacancies (or vacancy-related complexes) are the dominant hole trapping sites in this particular case. Along with the increase in radiation-induced oxide-trap charge, we observe a concomitant increase in the interface- and border-trap densities. This suggests that in devices that receive high-temperature anneals, all these phenomena are linked to the existence of oxygen vacancies either directly, or indirectly, perhaps via hole trapping at these vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111943
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  • 6
    Electronic Resource
    Electronic Resource
    O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2302-2308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The profile of oxygen atoms diffused from SiO2 films into Si substrates as interstitials during high temperature annealing has been studied by infrared absorption spectroscopy using 18O as a tracer. The measured absorbance profile in the substrates can be explained in terms of a simple diffusion model in which the SiO2 layer acts as a reservoir of O and there is no energy barrier to diffusion across the Si/SiO2 interface. The driving force for diffusion is the temperature-dependent solubility of oxygen interstitials in the Si. We find evidence both for the outdiffusion of oxygen from the SiO2 layer into the Si during extended annealing and retrodiffusion back into the SiO2 layer during temperature ramp down. From etchback profiling data on O interstitials we are able to revise the Arrhenius law for O diffusion in Si and obtain an activation energy of 2.57 eV and a preexponential factor of 0.22 cm2 s−1. It is further suggested that there is evidence for enhancement of the O diffusion coefficient in Si at low temperatures resulting from the presence of foreign species such as H. These observations are important in understanding the structure of a thermally grown SiO2/Si interface and annealing-induced degradation in Si-based devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361155
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  • 7
    Electronic Resource
    Electronic Resource
    Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 175-186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic nature of the degradation of oxide layers in Si/SiO2/Si structures induced by annealing in the temperature range 1200–1320 °C in inert or weakly oxidizing atmospheres has been studied. Electron-spin-resonance measurements have been performed on unannealed and annealed samples subsequently subjected to γ or X radiation or hole injection. Two oxygen-vacancy-related defect centers were observed, the monovacancy Eγ' center and the multiple vacancy Eδ'—both were observed in substantially larger numbers in annealed oxides as compared to unannealed oxides. Etchback profiling of the paramagnetic defect distributions shows that they are distributed nonuniformly throughout the annealed oxides with the highest densities close to the two Si/SiO2 interfaces. Electrical measurements of fixed oxide charge induced by X irradiation indicate that annealing results in the creation of both positive and negative charge traps. The numbers of positive trapped charges and their radiation dose dependence are inconsistent with their origin being identified simply with the paramagnetic oxygen-vacancy centers. Infrared measurements of the O interstitial content of the float-zone Si substrates of annealed and unannealed samples reveal that the interstitial concentration increases as a function of anneal temperature/time. Atomic force microscopy measurements reveal that the SiO2/Si substrate interfaces are roughened during high-temperature annealing. The data are interpreted in terms of a model in which oxygen is gettered from the oxide film into the over- and underlying Si. The O are incorporated into the Si as interstitials and it is their solubility limit at the anneal temperature which drives the gettering process. The oxygen-vacancy defect profiles near to both Si/SiO2 interfaces are not well predicted by the gettering model suggesting that other interface-related defect creation processes may be active. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359365
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  • 8
    Electronic Resource
    Electronic Resource
    Analysis of the vibrational mode spectra of amorphous SiO2 films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4343-4348 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral line shapes and the absorption frequencies of the oxygen related infrared active vibrational modes in amorphous SiO2 are studied both experimentally and by simulation. Experimental data were obtained on oxides grown thermally in the temperature range from 800 to 1050 °C and on oxides deposited at 300 °C by plasma enhanced chemical deposition. The transverse optic (TO) mode centered around 1090 cm−1 is found to have a line shape and peak frequency which varies significantly with film thickness while the longitudinal optic (LO) mode at 1256 cm−1 is invariant. Data on both modes and on refractive index is used to demonstrate consistently that the 800 °C grown oxide is 1.6%–2.0% denser than that grown at 1050 °C. For thin oxides (〈10 nm) there is evidence from both TO and LO modes that interfacial oxide is denser than the "bulk.'' The data on deposited oxides suggest that caution must be exercised in extending the analysis to their case. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359459
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO2 films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5672-5678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultraviolet induced chemical vapor deposition was used to deposit silicon dioxide dielectrics on III–V materials at low temperature. Auger electron spectroscopy and nuclear reaction analysis measurements show that the nitrogen concentration in the layers decreases continuously with the total pressure. These results are in complete agreement with infrared transmission spectroscopic and ellipsometric measurements. The number and the nature of the paramagnetic defects measured by electron spin resonance are also shown to be dependent upon the deposition pressure. Bridging nitrogen (O3≡Si–N–Si≡O3) and oxygen-like-vacancy centers (E'1) defects are observed in small quantities (≈1016 cm−3), while overcoordinated N defects are observed in concentrations up to 1018 cm−3, depending upon deposition pressure. Such SiO2 films were used in the processing of metal-insulator InP structures. Improvement of the electrical properties also occurs when the total pressure is increased, in agreement with expectations founded on the electron spin resonance results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354182
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical and spin resonance characteristics of low-temperature plasma-enhanced chemical-vapor-deposited SiO2 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4702-4708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and electron-spin-resonance measurements have been carried out on plasma-enhanced chemical-vapor-deposited SiO2 obtained using an N2O:SiH4 flow-rate ratio of 40 and a temperature of 300 °C. As-deposited films contain 2×1016 oxygen vacancy centers per cm3 while none were detectable in films annealed at 950 °C in Ar. 60Co γ radiation-induced defect creation is enhanced (〉80 times for a dose of 20 Mrad) in as-deposited films with respect to thermal SiO2 consistent with the deposited film being in a state of densification (∼10%) with respect to undensified, fused silica. This result is in agreement with the results of density, refractive index, and infrared spectroscopy measurement. Annealed films, having a density close to thermal SiO2, are found to be very radiation sensitive in terms of positive fixed oxide charge creation but the relevant defects are not associated with paramagnetic centers. The origin of the enhanced radiation sensitivity in annealed samples may be related to the presence of incorporated nitrogen or excess silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343828
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