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  • 1
    Electronic Resource
    Electronic Resource
    Bonding of silicon wafers for silicon-on-insulator (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4943-4950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several aspects of a new silicon-on-insulator technique utilizing bonding of oxidized silicon wafers were investigated. The bonding was achieved by heating in an inert atmosphere a pair of wafers with hydrophilic surfaces contacted face-to-face. A quantitative method for the evaluation of the surface energy of the bond based on crack propagation theory was developed. The bond strength was found to increase with the bonding temperature from about 60–85 erg/cm2 at room temperature to (approximately-equal-to)2200 erg/cm2 at 1400 °C. The strength was essentially independent of the bond time. Bonds created during 10-s annealing at 800 °C were mechanically strong enough to withstand the mechanical and/or chemical thinning of the top wafer to the desired thickness and subsequent device processing. A model was proposed to explain three distinct phases of bonding in the temperature domain. Electrical properties of the bond were tested using metal-oxide-semiconductor (MOS) capacitors. The results were consistent with a negative charge density at the bond interface of approximately 1011 cm−2. A double-etch-back procedure was used to thin the device wafer to the desired thickness with ±20 nm thickness uniformity across a 4-in. wafer. The density of threading dislocations in the remaining silicon layer was 102 –103 cm−2, and the residual dopant concentration less than 5×1015 cm−3, both remnants of the etchstop layer. Complimentary metal-oxide-semiconductor (CMOS) devices made in the 20–100 nm silicon thick layers had subthreshold slopes of 68 mV/decade (both n- and p-channel MOS transistors). The effective carrier lifetime was 15–20 μs in 80- and 300-nm-thick Si films and the interface state density at the Si film-buried oxide interface was ≤5×1010 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342443
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  • 2
    Electronic Resource
    Electronic Resource
    Strain compensation by Ge in B-doped silicon epitaxial films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4477-4479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A compensation of stress induced in silicon epitaxial films heavily doped with boron was investigated. Addition of a controlled amount of germanium during the film growth allows one to attain a desired compressive or tensile stress in the film, or its complete elimination. The data shows very good correlation with a theoretical model adapted from Herzog et al. [J. Electrochem. Soc. 131, 2969 (1984)]. A 6.45 : 1 ratio of atomic concentrations of Ge and B completely eliminates stress in these films. We determined a critical amount of strain in the films, (approximately-equal-to)2–4 μm thick, beyond which misfit dislocations are generated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352181
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  • 3
    Electronic Resource
    Electronic Resource
    Surface CoSi2 layers by moderate dose cobalt implantation for self-aligned contacts (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1248-1252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoSi2 layers produced by implantation of cobalt into silicon at 20 keV with doses 3–6×1016 cm−2 were investigated. Room temperature and 355 °C implants produced continuous layers of silicides with similar electrical properties. The minimum sheet resistivity of annealed samples was 9.2 Ω/sq. and the films were thermally stable up to about 900 °C. Low leakage currents (estimated 〈1×10−14 A(ring) per μm of a typical side-wall spacer length) in a SiO2 film which was similarly implanted with Co demonstrate the usefulness of this method for the formation of thin ((approximately-equal-to)20 nm) cobalt silicides for self-aligned source-drain contacts in shallow junction complimentary metal-oxide-semiconductor technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351297
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  • 4
    Electronic Resource
    Electronic Resource
    Epi-less bond-and-etch-back silicon-on-insulator by MeV ion implantation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2779-2781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified approach to silicon-on-insulator (SOI) by bond-and-etch-back technology was studied where a high-energy (MeV) boron implant was utilized as an etch stop to eliminate the need for an epitaxial layer growth in forming a device film. Also a second (retro) MeV implant, applied after the first stage of the etch-back process, was investigated as an improved method for achieving uniform thinning of a thick (3 μm) SOI film. Significantly improved thickness uniformities (σ〈10 nm across a 3×3 in. area) were obtained by this method for a 490-nm-thick silicon device film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104784
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  • 5
    Electronic Resource
    Electronic Resource
    Role of surface morphology in wafer bonding (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 257-260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain patterns detected by x-ray topography in wafers bonded for silicon-on-insulator (SOI) technology were found related to the flatness nonuniformity of the original wafers. Local stresses due to the bonding process are estimated to be about 1×108 dynes/cm2. The stress is reduced about 100 times for the thin (0.5 μm) SOI films. Most of the wafer deformation occurs during room temperature mating of the wafers. The deformation is purely elastic even at 1200 °C. The magnitude of the stress appears insignificant for complimentary metal-oxide-semiconductor devices performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347760
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  • 6
    Electronic Resource
    Electronic Resource
    Oxygen bubbles along individual ion tracks in O+ implanted silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 123-128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon wafers with and without a protective thermal oxide were implanted with oxygen at 150 keV with doses of 1.6–2.0×1018 cm−2. Transmission electron microscopy and secondary-ion mass spectroscopy were used to study the silicon layer above the implanted buried oxide. A regular array of spheroidal bubbles, postulated to be filled with oxygen gas, was observed only in the samples that were not protected by the oxide. The bubbles were aligned in individual columns whose orientation matched the direction of the implantation. The origin and kinetics of their formation are discussed. A model for column formation involving the overlap of ionization thermal spikes is proposed. It is also proposed that the observed phenomenon is a solid-state analog of the bubble chamber effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341455
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  • 7
    Electronic Resource
    Electronic Resource
    Kinetics of damage production in silicon during self-implantation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2310-2315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the damage which results from silicon self-implantation for the range of doses from 2×1014 to 1×1016 cm−2 for temperatures from 82 to 296 K for 150- and 300-keV implants. Cross-sectional transmission electron microscopy (TEM) was used to evaluate the nature of the damaged layer. The experimental results were correlated with computer calculated damage distributions using a Monte Carlo simulation program. The depth of the amorphous-crystalline interface(s) was evaluated as a function of dose and temperature. An experimental deposited-damage energy curve for individual cascade was constructed. Using the curve a critical energy density for amorphization Ec, was calculated for the samples implanted at different temperatures. The energy was found to depend on depth and implant energy, and it increases with temperature. A study of amorphous-crystalline interface morphology shows no dependence on temperature within the range considered. The kinetics of dynamic annealing are discussed in conjunction with the above findings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337140
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  • 8
    Electronic Resource
    Electronic Resource
    Optical properties of cathodochromic powder screens (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1021-1027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Melamed's diffuse reflectance for powdered materials is discussed in conjunction with its application for cathodochromic powder screens. Adaptation of the model was introduced through the modification of geometrical factor xu which is now to be empirically established for given screen. Experimental evidence obtained for cathodochromic bromosodalite well supports proposed modification.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336206
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  • 9
    Electronic Resource
    Electronic Resource
    Very thin CoSi2 films by Co sputtering (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 961-963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure, resistivity, and thermal stability of CoSi2 films ranging in thickness from ∼11 to 52 nm were investigated. Both the bulk and the surface components of the resistivity were extracted. The films exhibited good thermal stability. The thermal stability and the silicidation temperature which gave the minimum film sheet resistance were found to increase with the sputtered film thickness. The sheet resistance was independent of the ramp-up rate (3–20 °C/s), prolonged exposure of the Co film to air, and the presence of native oxides on the Si surface prior to Co deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108533
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  • 10
    Electronic Resource
    Electronic Resource
    Propagation loss measurements in silicon-on-insulator optical waveguides formed by the bond-and-etchback process (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1667-1669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of loss measurements for guided waves in silicon-on-insulator (SOI) optical waveguides formed by the bond-and-etchback process. Losses as low as 2.6 (2.0) dB/cm were found for the TE0 (TM0) mode for wavelength λ=1.319 μm. Grating coupling into these waveguides is demonstrated and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106262
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