Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Thermophysical effects in laser processing of materials with picosecond and femtosecond pulses (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6233-6240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Application of picosecond and femtosecond laser pulses to the controlled ablation of materials represents a relatively unexplored yet important topic in laser processing. Such ultrashort pulses are of potential value in areas of thin-film deposition, micromachining, and surgical procedures. We report here some early results of systematic studies being done from the femtosecond to the nanosecond regime, as an assessment of the problems and benefits associated with various laser pulse durations and their use in processing optically absorbing media. Experimental data and theoretical results of computer simulations are presented and compared for the threshold energies of ablation in gold as a function of pulse width from 10 ns to 100 fs. This work is then extended to include further numerically computed results for gold and silicon on ablation rates, threshold surface temperatures, liquid thicknesses, and vaporization rates as a function of pulse duration throughout the ultrafast regime from tens of femtoseconds to a few hundred picoseconds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360570
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    High-energy ion irradiation effects on the surfaces of silicon carbide and silicon nitride (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4791-4794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy ion irradiation effects on the surfaces of α-silicon carbide (SiC) and hot-pressed silicon nitride (Si3N4) were studied by optical microscopy, surface profilometry, Auger electron spectroscopy, and transmission electron microscopy (TEM) techniques. Optical microscopy and surface profilometry revealed that 1-MeV Ni+ ion irradiation at a dose of 1×1016 cm−2 produces swelling and roughness on both SiC and Si3N4. Auger electron spectroscopy in combination with sputtering revealed that the SiC surface becomes C rich, whereas the Si3N4 surface becomes Si rich due to ion irradiation. Cross-section TEM analysis of the surface layer of irradiated SiC showed that about 1 μm of material at the surface has become amorphous due to irradiation with 1-MeV Ni+ at a dose of 1×1016 cm−2. Amorphization has also been observed in Si3N4. These results are discussed with reference to the information available in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338339
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Ion beam mixing of metallic and insulating layers on SiC and Si3N4 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5263-5266 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam mixing of B, ZrO2, and Cr layers with sintered α-SiC, and Y and Cr layers with hot pressed Si3N4 was measured at room temperature. The mixing ion was selected from 1-MeV Ni+, 2-MeV Au+, or 1-MeV O+ ions. The amount of mixing was evaluated from Rutherford backscattering and Auger electron spectroscopies and occasionally from cross-section transmission electron microscopy. It was found that mixing takes place in the B/SiC, Cr/SiC, and Y/Si3N4 systems. No mixing is observed in the ZrO2/SiC and Cr/Si3N4 systems even after high dose ion bombardment. The enthalpy of mixing rule, which states that metals mix with insulators if the reaction enthalpy is negative and do not mix if it is positive, has been examined and found to hold for these systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338312
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Laser deposition of diamondlike carbon films at high intensities (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3120-3122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unhydrogenated diamondlike carbon (DLC) thin films have been deposited by laser ablation of graphite, using a high power Ti: sapphire solid state laser system. DLC films were deposited onto silicon substrates at room temperature with subpicosecond laser pulses, at peak intensities in the 4×1014–5×1015 W/cm2 range. A variety of techniques, including scanning and transmission electron microscopy (SEM and TEM), Raman spectroscopy, spectroscopic ellipsometry (SE), and electron energy loss spectroscopy (EELS) have been used to analyze the film quality. Smooth, partially transparent films were produced, distinct from the graphite target. Sp3 volume fractions were found to be in the 50%–60% range, with Tauc band gaps ranging from 0.6 to 1.2 eV, depending on laser intensity. Kinetic energies carried by the carbon ions in the laser induced plasma were measured through time-of-flight (TOF) spectroscopy. Their most probable kinetic energies were found to be in the 700–1000 eV range, increasing with laser intensity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114853
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Epi-less bond-and-etch-back silicon-on-insulator by MeV ion implantation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2779-2781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified approach to silicon-on-insulator (SOI) by bond-and-etch-back technology was studied where a high-energy (MeV) boron implant was utilized as an etch stop to eliminate the need for an epitaxial layer growth in forming a device film. Also a second (retro) MeV implant, applied after the first stage of the etch-back process, was investigated as an improved method for achieving uniform thinning of a thick (3 μm) SOI film. Significantly improved thickness uniformities (σ〈10 nm across a 3×3 in. area) were obtained by this method for a 490-nm-thick silicon device film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104784
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Application of cross-sectional transmission electron microscopy in the characterization of ion beam processed materials surfaces (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 142-148 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Ion-beam-mixing-induced amorphization of Ni—Ti bilayered thin film and the amorphization of α-SiC through ion bombardment have been studied by employing cross-sectional transmission electron microscopy techniques. Rutherford backscattering analysis was employed to monitor the mixing of Ni—Ti bilayer as a function of dose (3 × 1015-2 × 1016 ions cm-2) of 1 MeV Au+ ions. It has been observed that amorphization starts at the interface as the mixing proceeds. Formation of a buried amorphous layer was obtained in α-SiC by ion bombardment with 2.5 MeV Ni+ at a dose of 1 × 1016 ions cm-2. Double energy implants (1 MeV Ni+, 1 × 1016 ions cm-2+2 MeV Ni+, 1 × 1016 ions cm-2) were employed to obtain 1.8 μm thick continuous amorphous layer on the surface of α-SiC. Also, in the present investigation, it has been shown that α-SiC pieces with amorphous surface layers joined better than those with as received crystalline surface layers.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100214
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Preparation of cross-sectional TEM samples with observable thin sections at desired regions of non-uniform surfaced semiconducting devices (1987)
    New York, NY : Wiley-Blackwell
    Journal of Electron Microscopy Technique 5 (1987), S. 45-50 
    Details
    ISSN: 0741-0581
    Keywords: Cross-sectional TEM specimen ; Modulation doped field effect transistor (MODFET) ; Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Natural Sciences in General
    Notes: Transmission electron microscopy of cross-sectional samples offers an attractive means to study process evaluation and failure analysis of many semiconducting devices. In the present work, a technique to prepare cross-sectional TEM samples, containing thin sections of specifically desired regions within nonuniform surfaced semiconducting devices, is described.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jemt.1060050104
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...