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  • 1
    Electronic Resource
    Electronic Resource
    Transformation characteristics of 6H-based cadmium iodide polytypes (1977)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 33 (1977), S. 59-61 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Transformation characteristics of two cadmium iodide polytypes, 18H6 and 20H9, have been studied. Like other polytypes, these are not based on the most commonly found basic 4H structure; instead they are based on the low-periodicity structure 6H. On vacuum annealing, they transform according to the schemes 18H6 → 4H and 20H9 → 4H. An analysis of these transformations reveals that the growth and transformation processes need not necessarily be complementary. In order to determine a feasible transformation mechanism, the atomic structures (layer sequences) of the polytypes have been evaluated. These correspond to (2211)21122 for 18H6 and (2211)2(11)4 for 20H9. The schematic transformation mechanism has been elucidated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S056773947700014X
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  • 2
    Electronic Resource
    Electronic Resource
    Wet oxidation of amorphous Si-Ge layer deposited on Si(001) at 800 and 900 °C (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4020-4025 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Si0.56G0.44 films were deposited on (001)Si by electron beam evaporation in a vacuum having a base pressure of 10−7 Torr. They were then wet oxidized at 800 and 900 °C in an open tube furnace for various times. Cross (x)-sectional and plan view transmission electron microscope techniques were employed to characterize the samples. At 800 °C, 30 min of wet oxidation produced a continuous polycrystalline Si-Ge layer, whereas 60 min of wet oxidation produced a discontinuous polycrystalline layer. After 100 min of wet oxidation at 800 °C, the Si-Ge layer was almost completely oxidized and no observable evidence of the epitaxial Si-Ge layer was found. Wet oxidation at 900 °C for 10 min produced a bilayer structure; one epitaxial and one polycrystalline layer separated by a contamination layer initially present on the substrate prior to deposition. A mostly epitaxial Si-Ge layer was obtained after 30 min of wet oxidation at 900 °C. These results will be discussed in terms of a previously suggested epitaxial growth model. The failure to obtain an observable epitaxial Si-Ge layer by wet oxidation at 800 °C will be discussed by consideration of changes in the kinetics and the stability of both SiO2 and GeO2 at this temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352255
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of MoS2 phase in Al2O3, ZrO2, and SiO2 through ion implantation of constituent elements (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5169-5175 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline α-Al2O3 and yttria-stabilized ZrO2 substrates were coimplanted with 175-keV Mo+ and 74-keV S+ at doses of 1×1017 and 74-keV S+ and 2×1017 cm−2, respectively. An amorphous SiO2 substrate was coimplanted with 175-keV Mo+ and 74 keV S+ at doses of 4.97×1016 and 1.02×1017 cm−2, respectively. The energies of Mo+ and S+ ions were chosen to obtain a nearly overlapping depth profiles in all three substrates. Transmission electron microscopy, Rutherford backscattering, and Auger electron spectroscopy techniques were used to characterize the ion-implanted materials. The formation of MoS2 phase was observed in the as-implanted condition as well as after annealing at 700 °C in all substrates. Thermodynamic calculations were performed to predict the equilibrium binary phase formed in Al2O3, ZrO2, and SiO2 under the present implantation and annealing conditions. The predictions agree with the experimental findings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347058
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  • 4
    Electronic Resource
    Electronic Resource
    Titanium and carbon coimplantation into sintered α-SiC and hot-pressed Si3N4 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1885-1887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sintered α-SiC and hot-pressed Si3N4 were coimplanted with 175 keV Ti+ and 46 keV C+ at doses of 1×1017 cm−2. Energies of Ti+ and C+ were such that the depth distributions match closely. The samples were annealed at 1200 °C for 2 h in flowing Ar. The samples were characterized by Rutherford backscattering and cross-section transmission electron microscopy. The distribution of Ti in α-SiC remained unaltered after the anneal whereas significant redistribution occurred in Si3N4. Cross-section transmission electron microscopy revealed the formation of TiC precipitates in the recrystallized surface layer of SiC. Although some precipitates were found to be present in the recrystallized surface layer of Si3N4, the diffraction analysis revealed that these are not TiC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342924
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  • 5
    Electronic Resource
    Electronic Resource
    The mechanism of epitaxial Si-Ge/Si heterostructure formation by wet oxidation of amorphous Si-Ge thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 807-813 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Si-Ge/Si heterostructures have been formed from amorphous Si0.86Ge0.14, Si0.7Ge0.3, and Si0.56Ge0.44 films which were deposited at a vacuum of 10−7 Torr, followed by a wet oxidation process. The presence of an initial native oxide precluded solid phase epitaxy under standard annealing conditions, but epitaxy could be achieved by the use of wet oxidation. The samples were oxidized for various times at 900 °C and examined in reflected electron diffraction, ellipsometry, and cross-sectional and plan-view transmission electron diffraction. The formation of the epitaxial layer has been examined, and an epitaxial growth model is suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345736
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructural characterization of AlGaAs-GaAs modulation-doped field-effect transistor ohmic contacts formed by transient annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4723-4727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient annealing of a sequentially deposited metallization scheme, Au/Ni/Au/Ge/Ni, was used to obtain low resistivity ohmic contacts to GaAs-AlGaAs based modulation-doped field-effect transistors. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis techniques were employed to determine the type and distribution of various phases formed. Three different phases, namely, Au rich, Ni-Ge, and Ni-As(Ge), were observed. The Ni-As(Ge) phase was found to be in contact with GaAs. The Ni-Ge phase was present in localized regions in the Au-rich phase. Also, the Ni-Ge phase was found to be in direct contact with either Ni-As(Ge) or with GaAs. The Au-rich region manifested itself as a layered structure and was observed above the Ni-As(Ge) phase. As a consequence of the anneal cycle, movement of contact material both parallel and perpendicular to the device surface occurred at the metallization edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340129
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  • 7
    Electronic Resource
    Electronic Resource
    High-energy ion irradiation effects on the surfaces of silicon carbide and silicon nitride (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4791-4794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy ion irradiation effects on the surfaces of α-silicon carbide (SiC) and hot-pressed silicon nitride (Si3N4) were studied by optical microscopy, surface profilometry, Auger electron spectroscopy, and transmission electron microscopy (TEM) techniques. Optical microscopy and surface profilometry revealed that 1-MeV Ni+ ion irradiation at a dose of 1×1016 cm−2 produces swelling and roughness on both SiC and Si3N4. Auger electron spectroscopy in combination with sputtering revealed that the SiC surface becomes C rich, whereas the Si3N4 surface becomes Si rich due to ion irradiation. Cross-section TEM analysis of the surface layer of irradiated SiC showed that about 1 μm of material at the surface has become amorphous due to irradiation with 1-MeV Ni+ at a dose of 1×1016 cm−2. Amorphization has also been observed in Si3N4. These results are discussed with reference to the information available in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338339
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: Ion-beam mixing of Ni-Mo and Ni-Ti binary systems [J. Appl. Phys. 58, 248 (1985)] (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2798-2798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336317
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  • 9
    Electronic Resource
    Electronic Resource
    Ellipsometric measurements of molecular-beam-epitaxy-grown semiconductor multilayer thicknesses: A comparative study (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4867-4871 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable angle of incidence spectroscopic ellipsometry, cross-sectional transmission electron microscopy, and Rutherford backscattering are used to measure heterojunction layer thicknesses in the same AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits. Two additional samples were implanted with 750-keV Ga ions to fluences of 5×1015 and 1016 cm−2, respectively, and results of diagnostics measurements by the three techniques compared. The three techniques are found to complement each other in providing useful information.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338992
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  • 10
    Electronic Resource
    Electronic Resource
    Transmission-electron microscope studies of Au-Ni-Ge based ohmic contacts to GaAs-AlGaAs MODFET device (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4682-4688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique is developed to obtain cross-sectional transmission-electron microscope specimen of a specifically desired region of semiconducting devices. A Au-Ge-Ni based metallization scheme is used to obtain low resistivity ohmic contact to GaAs-AlGaAs based modulation-doped field-effect transistors device. Cross-sectional electron microscopy and energy dispersive x-ray analysis revealed that a uniformly alloyed region (Ni-Ge-As) can be obtained through the proposed metallization scheme. Transmission-electron diffraction, high-resolution electron microscopy, and optical-diffraction analyses are employed to determine the various phases in the contact region. Movement of contact materials both parallel and perpendicular to the device surface is observed at the metallization edges after alloying. Contacts stressed at elevated temperatures to the point of incipient instability are found to exhibit a rougher metal/semiconductor interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338380
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