Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
65 (1989), S. 1885-1887
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Sintered α-SiC and hot-pressed Si3N4 were coimplanted with 175 keV Ti+ and 46 keV C+ at doses of 1×1017 cm−2. Energies of Ti+ and C+ were such that the depth distributions match closely. The samples were annealed at 1200 °C for 2 h in flowing Ar. The samples were characterized by Rutherford backscattering and cross-section transmission electron microscopy. The distribution of Ti in α-SiC remained unaltered after the anneal whereas significant redistribution occurred in Si3N4. Cross-section transmission electron microscopy revealed the formation of TiC precipitates in the recrystallized surface layer of SiC. Although some precipitates were found to be present in the recrystallized surface layer of Si3N4, the diffraction analysis revealed that these are not TiC.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.342924
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
