ZIB

Hits per page

hit 1 - 1 | 1 hit

Sorting

Electronic Resource

Role of surface morphology in wafer bonding (1991)

Maszara, W. P. ; Jiang, B-L. ; Yamada, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 257-260

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The strain patterns detected by x-ray topography in wafers bonded for silicon-on-insulator (SOI) technology were found related to the flatness nonuniformity of the original wafers. Local stresses due to the bonding process are estimated to be about 1×108 dynes/cm2. The stress is reduced about 100 times for the thin (0.5 μm) SOI films. Most of the wafer deformation occurs during room temperature mating of the wafers. The deformation is purely elastic even at 1200 °C. The magnitude of the stress appears insignificant for complimentary metal-oxide-semiconductor devices performance.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347760

Permalink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit