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  • 1
    Electronic Resource
    Electronic Resource
    Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 175-186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic nature of the degradation of oxide layers in Si/SiO2/Si structures induced by annealing in the temperature range 1200–1320 °C in inert or weakly oxidizing atmospheres has been studied. Electron-spin-resonance measurements have been performed on unannealed and annealed samples subsequently subjected to γ or X radiation or hole injection. Two oxygen-vacancy-related defect centers were observed, the monovacancy Eγ' center and the multiple vacancy Eδ'—both were observed in substantially larger numbers in annealed oxides as compared to unannealed oxides. Etchback profiling of the paramagnetic defect distributions shows that they are distributed nonuniformly throughout the annealed oxides with the highest densities close to the two Si/SiO2 interfaces. Electrical measurements of fixed oxide charge induced by X irradiation indicate that annealing results in the creation of both positive and negative charge traps. The numbers of positive trapped charges and their radiation dose dependence are inconsistent with their origin being identified simply with the paramagnetic oxygen-vacancy centers. Infrared measurements of the O interstitial content of the float-zone Si substrates of annealed and unannealed samples reveal that the interstitial concentration increases as a function of anneal temperature/time. Atomic force microscopy measurements reveal that the SiO2/Si substrate interfaces are roughened during high-temperature annealing. The data are interpreted in terms of a model in which oxygen is gettered from the oxide film into the over- and underlying Si. The O are incorporated into the Si as interstitials and it is their solubility limit at the anneal temperature which drives the gettering process. The oxygen-vacancy defect profiles near to both Si/SiO2 interfaces are not well predicted by the gettering model suggesting that other interface-related defect creation processes may be active. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359365
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1775-1777 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Ta2O5 thin films have been obtained from TaF5 and O2 using a microwave excited electron cyclotron resonance plasma at low pressure (∼2 mTorr). Physical and electrical measurements reveal that the as-deposited amorphous films have excellent properties: refractive indices ∼2.16, dielectric constants ∼25, and leakage currents 〈10−10 A cm−2 at 2.5 V (0.3 MV cm−1, 85 nm thick, 13 nm SiO2 equivalent). Trapping and conduction properties of these layers have also been investigated, showing a reversible electron trapping and a trap-limited Poole–Frenkel effect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116663
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of high temperature processing of Si/SiO2/Si structures on their response to x-ray irradiation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2088-2090 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiation response of Si/SiO2/ Si structures subjected to x-ray irradiation in the presence and absence of applied electric field has been studied as a function of accumulated dose. High temperature annealing of sandwiches involving thermally grown oxide results in a softening of the radiation response, evidence for both hole and electron trapping is found. Similar behavior is found in buried oxide layers produced by O+ implantation, then subjected to high temperature annealing. Evidence for majority hole trapping is found in unannealed, thermal oxide. It is suggested that high temperature annealing results in a reduction of the oxide which is driven by the Si/SiO2 interface, resulting in electron and hole trap generation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110601
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    Paper (German National Licenses)
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