ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High quality Ta2O5 thin films have been obtained from TaF5 and O2 using a microwave excited electron cyclotron resonance plasma at low pressure (∼2 mTorr). Physical and electrical measurements reveal that the as-deposited amorphous films have excellent properties: refractive indices ∼2.16, dielectric constants ∼25, and leakage currents 〈10−10 A cm−2 at 2.5 V (0.3 MV cm−1, 85 nm thick, 13 nm SiO2 equivalent). Trapping and conduction properties of these layers have also been investigated, showing a reversible electron trapping and a trap-limited Poole–Frenkel effect. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116663
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