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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5188-5190 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared a series of polycrystalline bulk samples of (La1−xYx)2/3Ca1/3MnOδ (0≤x≤1), and studied their magnetization M, resistivity ρ, and low-field magnetoresistance (MR) in the temperature range 10 ≤T≤300 K. The ferromagnetic transition temperature of the samples Tc decreases with increasing x. For each sample, both ρ and MR have peak values at a temperature close to Tc. The peak value of ρ increases rapidly with increasing x while the peak value of MR has a maximum at x∼0.4. We observed MR value [defined as [ρ(0)−ρ(B)]/ρ(0)] as high as 91% at B=0.85 T. Some of the results could be explained by the semicovalent exchange theory of Goodenough [Prog. Solid State Chem. 5, 145, (1971)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 740-741 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of anisotropic transport properties in La2/3Ca1/3MnOδ that has a nearly cubic perovskite structure. We prepared single-crystal La2/3Ca1/3MnOδ thin films with a-axis orientation. It is found that the resistivity and magnetoresistance of the samples annealed in oxygen at 920 °C for 1 h are higher along the c-axis direction than along the a-axis direction by about 34%–37% near the metal–semiconductor transition temperature. Further post-annealing in oxygen at 950 °C for 6 h increased the anisotropy ratio of magnetoresistance to 1.9. This indicates that the anisotropic transport properties result from additional magnetic scattering along the c-axis direction of the films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1810-1812 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (La,Ca)MnOδ thin film can be used as a bolometer operated over a wide temperature range around its metal–semiconductor transition where its resistance (R) changes rapidly. This material has a high optical absorption coefficient over a broad wavelength range and is chemically stable in air. We measured the optical response of single-crystal (La,Ca)MnOδ thin films to a He–Ne laser (632.8 nm) as a function of temperature (T), light modulation frequency (f), bias current (I), and laser power (P). The temperature dependence of the measured signal follows the dR/dT curve and the signal depends linearly on I and P. These results indicate that the response is mainly bolometric. Room temperature operation is possible if the sample composition and oxygen stoichiometry are adjusted appropriately. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 78 (2001), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Cl−-ATPase in the CNS is a candidate for an outwardly directed neuronal Cl− transporter requiring phosphatidylinositol-4-phosphate (PI4P) for its optimal activity. To test its pathophysiological changes in a phosphatidylinositol (PI) metabolism disorder, the effects of neurotoxic factors in Alzheimer's disease (AD), amyloid β proteins (Aβs), on the Cl−-ATPase activity were examined using primary cultured rat hippocampal neurons. Amyloid β proteins (1–40, 1–42 and 25–35) concentration-dependently (1–100 nm) and time-dependently (from 1 h to 6 day) decreased Cl−-ATPase activity and elevated intracellular Cl− concentrations ([Cl−]i), Aβ25–35 being the most potent. Addition of inositol or 8-Br-cyclic GMP completely reversed these Aβ-induced changes. The recoveries in enzyme activity were attenuated by an inhibitor of PI 4-kinase, 10 µm wortmannin or 20 µm quercetin, but not by a PI 3-kinase inhibitor, 50 nm wortmannin or 10 µm LY294002. The PI, PIP and PIP2 levels of the plasma membrane-rich fraction were lower in the Aβ-treated cells as compared with each control. In the Aβ-exposed culture, but not in control, stimulation by 10 µm glutamate for 10 min significantly increased fragmentation of DNA and decreased cell viability. Addition of inositol or 8-Br-cyclic GMP prevented the effect of Aβ-treatment on the neurotoxicity of glutamate. Thus, Aβs reduce neuronal Cl−-ATPase activity, resulting in an increase in [Cl−]i probably by lowering PI4P levels, and this may reflect a pre-apoptotic condition in early pathophysiological profiles of AD.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6279-6281 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Giant magnetoresistance (GMR) effect in magnetic multilayered thin films is strongly affected by interface roughness. We prepared [Ag/Ni]60 superlattices on Corning's 7059 glass substrates using a novel facing-target sputtering method and observed that the interface roughness can be controlled by varying the discharge pressure (PAr). The samples prepared at PAr≈10 mTorr exhibit sharpest interfaces, good (111) texture, and largest GMR effects (Δρ/ρs=9% at room temperature). Lower PAr promotes interface mixing while higher PAr results in much rougher interfaces and emergence of structural defects. Both cases weaken the antiferromagnetic coupling strength and thus reduce the MR effect. When PAr≥30 mTorr, we observed a further degradation of the multilayered structure. The GMR effects in these samples disappeared. Low-temperature annealing can improve the flatness of the interfaces and film structure, while higher-temperature annealing ((approximately-greater-than)300 °C) decomposes the multilayer structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3272-3274 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Step flow growth patterns have been observed on single-crystal (La,Ca)MnOδ (LCMO) thin films by atomic force microscopy. These films were grown on (110) NdGaO3 substrates by a simple facing-target sputtering method. The steps, of monolayer height (0.2 nm), are surprisingly straight and evenly spaced. The best sample has an average step width of about 400 nm which is comparable to that found on the molecular beam epitaxially grown GaAs. The step edges are parallel to the LCMO [001] direction indicating that the growth rates are anisotropic. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3371-3373 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal films of perovskitelike (La,Ca)MnO3 with very smooth surface were grown epitaxially on (110) NdGaO3 substrates by a simple facing-target sputtering technique. Their in-plane and out-of-plane crystal structures were examined by means of a novel double-crystal x-ray diffraction technique. The c axis of the samples lay in the film plane. All rocking curves were found to have a full width at half-maximum of about 0.01° which is smaller than all reported structure data for ceramic thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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